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AiT Semiconductor Inc. www.ait-ic.com AM2313 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2016 RELEASED - - 1 - DESCRIPTION FEATURES The AM2313 is available in SOT-23S package.
ORDERING INFORMATION
SPQ: 3,000pcs/Reel E3S AM2313E3SR AM2313E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products -18V/3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. Available in SOT-23S Package APPLICATION Power Management Portable Equipment and Battery Powered Systems. TYPICAL APPLICATION
AiT Semiconductor Inc. www.ait-ic.com AM2313 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2016 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2313 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2016 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise noted VDS, Drain-Source Voltage -18V VGS, Gate-Source Voltage ±10V ID, Drain Current-Continuous -3A Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T A=25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off Characteristics Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -18 - - V Zero-Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V - - -1 μA Gate Body Leakage Current, Forward IGSSF VGS=10V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-10V, VDS=0V - - -100 nA On Characteristics Gate Threshold Voltage VGS(th) VGS=VDS, ID=-250μA -0.4 - -1.0 V Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-3.0A - - 120 mΩ VGS=-2.5V, ID=-2.0A - - 150 mΩ Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS=0V, IS=-1.25A - - -1.2 V
AiT Semiconductor Inc. www.ait-ic.com AM2313 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2016 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Output Characteristics 2. Transfer Characteristics 3. Breakdown Voltage Variation with Temperature 4. Gate Threshold Variation with Temperature 5. On-Resistance Variation with Temperature 6. On-Resistance vs. Drain Current
AiT Semiconductor Inc. www.ait-ic.com AM2313 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2016 RELEASED - - 5 - 7. On-Resistance vs. Gate-to-Source Voltage 8. Source-Drain Diode Forward Voltage
AiT Semiconductor Inc. www.ait-ic.com AM2313 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2016 RELEASED - - 6 -
PACKAGE INFORMATION
Dimension in SOT-23S (Unit: mm)
AiT Semiconductor Inc. www.ait-ic.com AM2313 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2016 RELEASED - - 7 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, an d advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate desi gn and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.