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AiT Semiconductor Inc. www.ait-ic.com AM2309 MOSFET 20V P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 1 - DESCRIPTION FEATURES The AM2309 is available in SOT-23S package.  VDS = -20V RDS(ON), VGS@-4.5V, IDS@-2.8A =100mΩ RDS(ON), VGS@-2.5V, IDS@-2.0A =150mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Fully Characteri zed Avalanche Voltage and Current  Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device  Available in SOT-23S Package ORDERING INFORMATION P CHANNEL MOSFET Package Type Part Number SOT-23S E3S AM2309E3SR AM2309E3SVR Note V: Halogen free Package R: Tape & Reel SPQ: 3,000pcs/Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package

AiT Semiconductor Inc. www.ait-ic.com AM2309 MOSFET 20V P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

TA=25℃, unless otherwise noted VDS, Drain-Source Voltage -20V VGS, Gate-Source Voltage ±8V ID, Continuous, Drain Current- -2.3A IDM, Pulsed Drain CurrentNOTE1 -8A PD, Maximum Power Dissipation TA = 25°C 0.9W TA = 75°C 0.57W TJ, TSTG, Operating Junction and Storage Temperature Range -55°C ~150°C RθJC, Junction-to-Case Thermal Resistance RθJA, Junction-to-Ambient Thermal Resistance (PCB mounted)NOTE2 140°C/W Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Repetitive Rating: Pulse width limited by the Maximum junction temperature. NOTE2: 1-in2 2oz Cu PCB board NOTE3: Guaranteed by design; not subject to production testing

AiT Semiconductor Inc. www.ait-ic.com AM2309 MOSFET 20V P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 3 -

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250μA -20 - - V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V,ID=-2.8A - 69 100 mΩ VGS=-2.5V,ID=-2.0A - 83 150 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.45 - -0.95 V Zero Gate Voltage Drain Current IDSS VDS=-9.6V,VGS=0V - - -1 μA Gate Body Leakage IGSS VGS=±8V,VDS=0V - - ±100 nA Gate Resistance Rg - - - Ω Forward Transconductance gFS VDS=-5V,ID=-4.0A - 6.5 - S Dynamic NOTE 3 Total Gate Charge Qg VDS=-6V,ID=-2.8A, VGS=-4.5V - 15.23 - nC Gate-Source Charge Qgs - 5.49 - Gate-Drain Charge Qgd - 2.74 - Turn-on Delay Time td(on) VDD=-6V,RL=6Ω ΙD = −1Α,VGEN=-4.5V, RG=6Ω - 17.28 - ns Turn-on Rise Time tr - 3.73 - Turn-Off Delay Time td(off) - 36.05 - Turn-Off Fall Time tf - 6.19 - Input Capacitance Clss VDS=-6V,VGS=0V, F=1.0MHz - 882.51 - pF Output Capacitance Coss - 145.54 - Reverse Transfer Capacitance Crss - 97.26 - Source-Drain Diode Max. Diode Forward Current IS - - -2.4 A Diode Forward Voltage VSD IS=-0.75A, VGS=0V - -0.8 -1.2 V NOTE: Pulse test: pulse width <= 300μs, duty cycle<= 2%

AiT Semiconductor Inc. www.ait-ic.com AM2309 MOSFET 20V P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Transfer Characteristics 2. On–Region Characteristics 3. On–Resistance versus Drain Current 4. On-Resistance vs. Gate-to-Source Voltage 5. Gate Charge 6. Capacitance

AiT Semiconductor Inc. www.ait-ic.com AM2309 MOSFET 20V P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 5 - 7. On-Resistance vs. Junction Temperature 8. VGS(th) vs. Junction Temperature TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1. Switching Test Circuit 2. Switching Waveforms

AiT Semiconductor Inc. www.ait-ic.com AM2309 MOSFET 20V P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 6 -

PACKAGE INFORMATION

Dimension in SOT-23S Package (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 2.80 3.04 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 0.89 1.11 0.0350 0.0440 D 0.37 0.50 0.0150 0.0200 G 1.78 2.04 0.0701 0.0807 H 0.013 0.100 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.35 0.69 0.0140 0.0285 L 0.89 1.02 0.0350 0.0401 S 2.10 2.64 0.0830 0.1039 V 0.45 0.60 0.0177 0.0236

AiT Semiconductor Inc. www.ait-ic.com AM2309 MOSFET 20V P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 7 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing ord ers, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical appli cations. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associat ed with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.