AM2308

AM2308 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM2308 MOSFET 60V N-CHANNEL ENHANCEMENT MODE M OSFET REV1.1 - DEC 2013 RELEASED, AUG 2021 UPDATED - - 1 - DESCRIPTION FEATURES VDS=60V VGS=±20V ID(A)=3.3A RDS(ON)= 67mΩ(Typ.) @ VGS= 10V RDS(ON)= 76mΩ(Typ.) @ VGS= 4.5V AM2308 is available in a SOT-23S package. ⚫ Fast Switch ⚫ Available in a SOT-23S package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23S SPQ: 3,000pcs/Reel E3S AM2308E3SR AM2308E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products ⚫ Head-Held Instruments ⚫ Power Management ⚫ LED Lighting N CHANNEL MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM2308 MOSFET 60V N-CHANNEL ENHANCEMENT MODE M OSFET REV1.1 - DEC 2013 RELEASED, AUG 2021 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM2308 MOSFET 60V N-CHANNEL ENHANCEMENT MODE M OSFET REV1.1 - DEC 2013 RELEASED, AUG 2021 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 60V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current TA=25℃ 3.3A TA=70℃ 3.0A IDM, Pulsed Drain CurrentNOTE2 13.4A IAS, Avalanche CurrentNOTE2 5A EAS, Single Pulse Avalanche Energy (L=0.3mH)NOTE2 3.75mJ PD, Power DissipationNOTE1 TA=25oC 1.6W TA=70℃ 1W TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface mounted on FR4 board using 1 in2 pad size NOTE2: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). NOTE3: Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. THERMAL CHARACTERISTICS Parameter Symbol Typ Max Units Thermal Resistance Junction to Ambient NOTE1 t≦10s RθJA - 80 ℃/W Thermal Resistance Junction to Ambient NOTE1, 3 Steady-State - 130

AiT Semiconductor Inc. www.ait-ic.com AM2308 MOSFET 60V N-CHANNEL ENHANCEMENT MODE M OSFET REV1.1 - DEC 2013 RELEASED, AUG 2021 UPDATED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V, TJ=25°C - - 1 μA VDS=48V, VGS=0V, TJ=75°C - - 10 Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250μA 1.2 1.9 2.5 V Drain-Source On-state ResistanceNOTE4 RDS(ON) VGS=10V, ID=3.3A - 67 80 mΩ VGS=4.5V, ID=2.3A - 76 90 Forward Transconductance Gfs VDS=10V, ID=3.3A - 6.2 - S Diode Characteristics Diode Forward VoltageNOTE4 VSD ISD=1A, VGS=0V - 0.75 1 V Diode Continuous Forward Current IS - - 1.7 A Dynamic and Switching ParameterNOTE5 Total Gate Charge(10V) Qg VDS=30V, VGS=10V, IDS=3.3A - 6.6 9.8 nC Total Gate Charge(4.5V) Qg - 3.2 4.8 Gate-Source Charge Qgs - 1.4 2.1 Gate-Drain Charge Qgd - 1.0 1.5 Input Capacitance Ciss VDS=30V, VGS=0V, f=1.0MHz - 426 - pF Output Capacitance Coss - 35 - Reverse Transfer Capacitance Crss - 14 - Turn-on Time td(on) VDD=30V, VGEN=10V, RG=3.3Ω, ID=1A, - 4.5 8.0 ns tr - 8.0 15 Turn-off Time td(off) - 14 25 tf - 5.0 9.0 NOTE4: Pulse test width ≤300μs and duty cycle ≤ 2%. NOTE5: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM2308 MOSFET 60V N-CHANNEL ENHANCEMENT MODE M OSFET REV1.1 - DEC 2013 RELEASED, AUG 2021 UPDATED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM2308 MOSFET 60V N-CHANNEL ENHANCEMENT MODE M OSFET REV1.1 - DEC 2013 RELEASED, AUG 2021 UPDATED - - 6 - 7. Drain-Source On Resistance 8. Drain Current vs TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM2308 MOSFET 60V N-CHANNEL ENHANCEMENT MODE M OSFET REV1.1 - DEC 2013 RELEASED, AUG 2021 UPDATED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23S Package (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 0.940 1.120 0.037 0.044 A1 0.040 0.120 0.002 0.005 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.090 0.110 0.004 0.004 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 BSC 0.037 BSC e1 1.800 2.000 0.071 0.079 L 0.500 0.600 0.020 0.024 L1 0.300 0.500 0.012 0.020 θ 1° 7° 1° 7°

AiT Semiconductor Inc. www.ait-ic.com AM2308 MOSFET 60V N-CHANNEL ENHANCEMENT MODE M OSFET REV1.1 - DEC 2013 RELEASED, AUG 2021 UPDATED - - 8 - IMPORTANT NOTICE AiT Se miconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advi ses its customers to o btain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warr anted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of dea th, personal injury, o r servere property, or environmental damage. In order to mi nimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liabilit y to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.