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AiT Semiconductor Inc. www.ait-ic.com AM2307 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 1 - DESCRIPTION FEATURES The AM2307 is available in SOT-23S package.  -20V/-4.3A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  Available in SOT-23S Package ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23S E3S AM2307E3SR AM2307E3SVR Note V: Halogen free Package R: Tape & Reel SPQ: 3,000pcs/Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package  Power Management  Portable Equipment and Battery Powered Systems. P CHANNEL MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM2307 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM2307 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25℃, unless otherwise noted VDS, Drain-Source Voltage -20V VGS, Gate-Source Voltage ±12V ID, Drain Current-Continuous -4.3A Stresses above may cause permanent damage to the device. T hese are stress ratings only and functional operation of the devic e at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

T A=25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Off Characteristics Drain to Source Breakdown Voltage BVDSS VGS=0V,ID=-250μA -20 - - V Zero-Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA Gate Body Leakage Current, Forward IGSSF VGS=12V,VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-12V,VDS=0V - - -100 nA On Characteristics NOTE 3 Gate Threshold Voltage VGS(th) VGS=VDS,ID=-250μA -0.7 - -1.3 V Static Drain-Source On-Resistance RDS(ON) VGS=-10V,ID=-4.2A - 50 55 mΩ VGS=-4.5V,ID=-4.0A - 60 70 VGS=-2.5V,ID=-1.0A - 80 120 Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS=0V, IS=-1.0A - - -1.0 V

AiT Semiconductor Inc. www.ait-ic.com AM2307 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS 1. On-Region Characteristics 2. Transfer Characteristics 3. On-Resistance vs. Drain Current and Gate Voltage 4. On-Resistance vs. Junction Temperature 5. On-Resistance vs. Gate-Source Voltage 6. Body-Diode Characteristics

AiT Semiconductor Inc. www.ait-ic.com AM2307 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 5 -

PACKAGE INFORMATION

Dimension in SOT-23S Package (Unit: mm)

AiT Semiconductor Inc. www.ait-ic.com AM2307 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 -AUG 2016 RELEASED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate des ign and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.