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AiT Semiconductor Inc. www.ait-ic.com AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - - 1 - DESCRIPTION FEATURES The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package.
ORDERING INFORMATION
V: Halogen free Package R: Tape & Reel AiT provides all RoHS products VDS = 30V,ID = 5.8A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V High Power and current handing capability Surface mount package Available in SOT-23S Package APPLICATION Load switch PWM application TYPICAL APPLICATION Schematic diagram
AiT Semiconductor Inc. www.ait-ic.com AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
TA = 25°C, unless otherwise noted VDS, Drain-Source Voltage 30V VGS, Gate-Source Voltage ±20V ID, Drain Current-Continuous 5.8A IDM, Drain Current-Pulsed NOTE1 20A PD, Maximum Power Dissipation 1.4W TJ, TSTG, Operating Junction and Storage Temperature Range -55℃~150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTIC Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient NOTE2 RθJA 89 ℃/W NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
AiT Semiconductor Inc. www.ait-ic.com AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - - 3 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 30 33 - V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA On Characteristics NOTE3 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.6 2.4 V Drain-Source On-state Resistance RDS(ON) VGS=10V,ID=5A - 25.5 31 mΩ VGS=4.5V,ID=4A - 34 43 Forward Transconductance gFS VDS=5V,ID=5A - 15 - S Dynamic CharacteristicsNOTE4 Input Capacitance Ciss VDS=15V,VGS=0V, F=1.0MHz - 255 - pF Output Capacitance Coss - 45 - Reverse Transfer Capacitance Crss - 35 - Switching CharacteristicsNOTE4 Turn-on Delay Time td(on) VDD=15V, RL=3Ω, VGS=10V, RGEN=3Ω - 4.5 - ns Turn-on Rise Time tr - 2.5 - Turn-off Delay Time td(off) - 14.5 - Turn-off Fall Time tf - 3.5 - Total Gate Charge Qg VDS=15A, IDS=5A, VGS=10V - 5.2 - nC Gate-Source Charge Qgs - 0.85 - Gate-Drain Charge Qgd - 1.3 - Drain-Source Diode Characteristics Diode Forward Voltage NOTE3 VSD VGS=0V, IS=5A - - 1.2 V Diode Forward Current NOTE2 IS - - 5 A NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NOTE4: Guaranteed by design, not subject to production
AiT Semiconductor Inc. www.ait-ic.com AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - - 4 - TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1. Switching Test Circuit 2. Switching Waveforms 3. Output Characteristics 4. Transfer Characteristics 5. Drain-Source On-Resistance 6. Drain-Source On-Resistance
AiT Semiconductor Inc. www.ait-ic.com AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - - 5 - 7. RDSON vs. VGS 8. Drain-Source On-Resistance 9. Gate Charge 10. Source- Drain Diode Forward 11. Capacitance vs. Vds 12. Safe Operation Area
AiT Semiconductor Inc. www.ait-ic.com AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - - 6 - 13. Normalized Maximum Transient Thermal Impedance
AiT Semiconductor Inc. www.ait-ic.com AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23S (Unit: mm) SYMBOL MIN MAX A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc . (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks asso ciated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.