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AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 1 - DESCRIPTION FEATURES The AM2305 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM2305 is available in SOT-23 package.
ORDERING INFORMATION
V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package VDS = -20V,ID = -4.1A RDS(ON) <75mΩ@ VGS=-2.5V RDS(ON) < 52mΩ@ VGS=-4.5V High Power and current handing capability Surface Mount Package Available in SOT-23 Package APPLICATION PWM applications Load switch Power management P CHANNEL MOSFET Schematic diagram
AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS VDS, Drain-Source Voltage -20V VGS, Gate-Source Voltage ±8V ID, Drain Current-Continuous -4.1A IDM, Drain Current-PulsedNOTE1 -15A PD, Maximum Power Dissipation 1.7W TJ, TSTG, Operating Junction and Storage Temperature Range -55°C ~150°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Limit Units Thermal Resistance,Junction-to-AmbientNOTE2 RθJA 74 °C/W NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250μA -20 - - V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V - - ±100 nA On Characteristics NOTE 3 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.45 -0.7 -1.0 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V,ID=-4.1A - 45 52 mΩ VGS=-2.5V,ID=-3.0A - 60 75 Forward Transconductance gFS VDS=-5V,ID=-3.5A - 8.5 - S Dynamic Characteristics NOTE 4 Input Capacitance Clss VDS=-4V,VGS=0V, F=1.0MHz - 740 - pF Output Capacitance Coss - 290 - Reverse Transfer Capacitance Crss - 190 - Switching Characteristics NOTE 4 Turn-on Delay Time td(on) VDD=-4V, ID=-3.3A RL=1.2Ω, VGEN=-4.5V RG=1Ω - 12 - ns Turn-on Rise Time tr - 35 - Turn-Off Delay Time td(off) - 30 - Turn-Off Fall Time tf - 10 - Total Gate Charge Qg VDS=-4V,ID=-4.1A, VGS=-4.5V - 7.8 - nC Gate-Source Charge Qgs - 1.2 - Gate-Drain Charge Qgd - 1.6 - Drain-Source Diode Characteristics Diode Forward Voltage NOTE3 VSD VGS=0V, IS=-1.6A - - -1.2 V Diode Forward Current NOTE2 IS - - 1.6 A NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec. NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NOTE4: Guaranteed by design, not subject to production
AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Output CHARACTERISTICS 4. Drain-Source On-Resistance 5. Transfer Characteristics 6. Drain-Source On-Resistance
AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 6 - 7. Rdson vs. Vgs 8. Capacitance vs. Vds 9. Gate Charge 10. Source- Drain Diode Forward 11. Safe Operation Area
AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 7 - 12. Normalized Maximum Transient Thermal Impedance DETAILED INFORMATION 1. Switching Test Circuit 2. Switching Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 8 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) SYMBOL MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM2305 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0 - NOV 2010 RELEASED, JUN 2016 UPDATED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products ar e not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.