AM2303 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - - 1 - DESCRIPTION FEATURES The AM2303 is the P -Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON) low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general applications. The AM2303 is available in SOT-23 package -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Available in SOT-23 package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-23 E3 AM2303E3R AM2303E3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA DC/DC Converter Load Switch P CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current , VGS = -10VNOTE1 Tc=25℃ -4.3A Tc=70℃ -3.8A IDM, Pulsed Drain Current NOTE2 -20A PD, Power Dissipation TA=25oC 1.25W TA=70oC 0.8W TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. NOTE2: The data tested by pulsed , pulse width≦300uS , duty cycle≦2% THERMAL INFORMATION Symbol Max Unit RθJA 120 ℃/W RθJL 80 ℃/W
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250μA -30 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.6 - -1.0 V Gate Leakage Current IGSS VDS=0V,VGS=±12V - - ±100 nA Zero Gate Voltage Drain- Source Leakage Current IDSS VDS=-24V,VGS=0V TJ=25°C - - -1 μA VDS=-24V,VGS=0V TJ=55°C - - -5 Drain-source On-ResistanceNOTE2 RDS(ON) VGS=-10V,ID=-4.3A - 50 58 mΩ VGS=-4.5V,ID=-3.5A - 58 65 VGS=-2.5V,ID=-2.5A - 73 92 Forward Transconductance GFS VDS=-5V,ID=-4.0A - 10 - S Source-Drain Doide Diode Forward Voltage VSD IS=-1.0A,VGS=0V - -0.7 -1.0 V Continuous Source Current NOTE1,3 IS - - -5.6 A Dynamic Parameters Total Gate Charge QG(-4.5V) VDS=-20V, VGS=-4.5V ID≡-4.0A - 6.8 - nC Gate-Source Charge QGS - 3.0 - Gate-Drain Charge QGD - 3.3 - Input Capacitance CISS VDS=-12V, VGS=0V f=1MHz - 681 - pF Output Capacitance COSS - 290 - Reverse Transfer Capacitance CRSS - 112 - Turn-On Time tD(ON) VDD=-12V, ID=-4A VGEN=-10V, RG=3.3Ω - 10 - nS tR - 16 - Turn-Off Time tD(OFF) - 24 - tF - 22 - NOTE3: The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - - 5 - TYPICAL CHARACTERISTICS 25℃, unless noted 1. Output Characteristics 2. Drain-Source On Resistance 3. Drain Source On Resistance 4. Transfer Characteristics 5. Gate Charge 6. Drain Source Resistance
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - - 6 - 7. Capacitance 8. Source Drain Diode Forward 9. Power Dissipation 10. Drain Current 11. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) SYMBOL MIN MAX A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950(TYP.) e1 1.800 2.000 L 0.300 0.500 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applicati ons. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.