AM2302 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 1 - DESCRIPTION FEATURES The AM2302 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. AM2302 is available in a SOT-23S package.  VDS =20V,ID =2.9A RDS(ON) <59mΩ @ VGS=2.5V RDS(ON) <45mΩ @ VGS=4.5V  High Power and current handing capability  Surface Mount Package  Available in a SOT-23S package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23S SPQ: 3,000pcs/Reel E3S AM2302E3SR AM2302E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  Battery protection  Load switch  Power management PIN DESCRIPTION Schematic diagram

AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDS, Drain-Source Voltage 20V VGS, Gate-Source Voltage ±10V ID, Drain Current-Continuous 2.9A IDM, Pulsed Drain CurrentNOTE1 10A PD, Maximum Power Dissipation 1W TJ, TSTG, Operating Junction and Storage Temperature Range -55℃~150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTIC Parameter Symbol Value Units Thermal Resistance , Junction-to-AmbientNOTE2 RθJA 125 ℃/W

AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 20 22 - V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±10V, VDS=0V - - ±100 nA On CharacteristicsNOTE3 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 0.5 0.75 1.2 V Drain-Source On-state Resistance RDS(ON) VGS=2.5V, ID=2.5A - 37 59 mΩ VGS=4.5V, ID=2.9A - 30 45 Forward Transconductance gFS VDS=5V, ID=2.9A - 8 - S Dynamic CharacteristicsNOTE4 Input Capacitance Ciss VDS=10V,VGS=0V, f=1.0MHz - 300 - pF Output Capacitance Coss - 120 - Reverse Transfer Capacitance Crss - 80 - Switching CharacteristicsNOTE4 Turn-on Delay Time td(on) VDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω - 10 15 ns Turn-on Rise Time tr - 50 85 Turn-off Delay Time td(off) - 17 45 Turn-off Fall Time tf - 10 20 Total Gate Charge Qg VDS=10V, ID=2.9A, VGS=4.5V - 4.0 10 nC Gate-Source Charge Qgs - 0.65 - Gate-Drain Charge Qgd - 1.2 - Drain-Source Diode Characteristics Diode Forward VoltageNOTE3 VSD VGS=0V, IS=2.9A - 0.75 1.2 V Diode Forward CurrentNOTE2 IS - - 2.9 A NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature. NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec. NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NOTE4: Guaranteed by design, not subject to production

AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Output Characteristics 4. Drain-Source On-Resistance 5. Transfer Characteristics 6. Drain-Source On-Resistance

AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 6 - 7. RDS(ON) vs. VGS 8. Capacitance vs. VDS 9. Gate Charge 10. Source- Drain Diode Forward 11. Safe Operation Area

AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 7 - 12. Normalized Maximum Transient Thermal Impedance 13. Switching Test Circuit 14. Switching Waveforms

AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 8 -

PACKAGE INFORMATION

Dimension in SOT-23S (Unit: mm) Symbol Min. Max. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950 TYP e1 1.800 2.000 L 0.550 REF L1 0.300 0.500 θ 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM2302 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - FEB 2019 RELEASED, FEB 2019 UPDATED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to cust omer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.