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AiT Semiconductor Inc. www.ait-ic.com AM2301 MOSFET P-CHANNEL ENHANCEMENT MODE REV3.0 - JUN 2010 RELEASED, FEB 2018 UPDATED - - 1 - DESCRIPTION FEATURES The AM2301 is the P -Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general applications. The AM2301 is available in SOT-23S Package -20V/-3.0A, RDS(ON) =80mΩ(typ.)@VGS =-4.5V -20V/-2.0A, RDS(ON) =105mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low Gate Charge Exceptional on-resistance and Maximum DC current capability Available in SOT-23S Package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-23S SPQ: 3,000pcs/Reel E3S AM2301E3SR AM2301E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Power Management in Note book Portable Equipment Networking DC-DC Power System Load Switch PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM2301 MOSFET P-CHANNEL ENHANCEMENT MODE REV3.0 - JUN 2010 RELEASED, FEB 2018 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2301 MOSFET P-CHANNEL ENHANCEMENT MODE REV3.0 - JUN 2010 RELEASED, FEB 2018 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current , VGS = -4.5V TA=25℃NOTE1 3.2A TA=70℃NOTE1 2.5A IDM, Pulsed Drain CurrentNOTE2 -10A PD, Power Dissipation TA=25oC 1.0W TA=70oC 0.7W TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL INFORMATION Parameter Symbol Limit Unit Thermal Resistance-Junction to AmbientNOTE1 Steady-State RθJA 125 °C/W Thermal Resistance Junction to LeadNOTE1 Steady-State RθJC 85 °C/W
AiT Semiconductor Inc. www.ait-ic.com AM2301 MOSFET P-CHANNEL ENHANCEMENT MODE REV3.0 - JUN 2010 RELEASED, FEB 2018 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250μA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.5 - -1.2 V Gate Leakage Current IGSS VDS=0V,VGS=±12V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V TJ=25°C - - -1 μA VDS=-20V,VGS=0V TJ=55°C - - -5 Drain-source On-ResistanceNOTE2 RDS(ON) VGS=-4.5V,ID=-3.0A - 80 98 mΩ VGS=-2.5V,ID=-2.0A - 105 130 Forward Transconductance Gfs VDS=-5V,ID=-3.0A - 7.5 - S Source-Drain Doide Diode Forward Voltage VSD IS=-1.0A,VGS=0V - -0.7 -1.2 V Continuous Source Current NOTE1,3 IS - - -6 A Dynamic Parameters Total Gate Charge Qg VDS=-12V, VGS=-4.5V ID≡-3.0A - 9.4 - nC Gate-Source Charge Qgs - 1.2 - Gate-Drain Charge Qgd - 3.5 - Input Capacitance Ciss VDS=-10V, VGS=0V f=1MHz - 521 - pF Output Capacitance Coss - 81 - Reverse Transfer Capacitance Crss - 56 - Turn-On Time td(on) VDD=-12V, ID=-1A VGEN=-4.5V, RG=3.3Ω - 7.2 - ns tr - 16 - Turn-Off Time td(off) - 21 - tf - 9 - NOTE1: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. NOTE2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% NOTE3: The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
AiT Semiconductor Inc. www.ait-ic.com AM2301 MOSFET P-CHANNEL ENHANCEMENT MODE REV3.0 - JUN 2010 RELEASED, FEB 2018 UPDATED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Drain Source On Resistance 4. Drain Source On Resistance 5. Gate Charge 6. Drain Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM2301 MOSFET P-CHANNEL ENHANCEMENT MODE REV3.0 - JUN 2010 RELEASED, FEB 2018 UPDATED - - 6 - 7. Source Drain Diode Forward 8. Capacitance 9. Drain Current 10. Power Dissipation 11. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM2301 MOSFET P-CHANNEL ENHANCEMENT MODE REV3.0 - JUN 2010 RELEASED, FEB 2018 UPDATED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP 0.037 TYP e1 1.800 2.000 0.071 0.079 L 0.550 REF. 0.022 REF. L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM2301 MOSFET P-CHANNEL ENHANCEMENT MODE REV3.0 - JUN 2010 RELEASED, FEB 2018 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) re serves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, t hat the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.