AM2300

AM2300 AITSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 1 - DESCRIPTION FEATURES VDS=20V VGS=±12V ID(A)= 5A RDS(ON) = 22mΩ(typ.)@VGS = 4.5V RDS(ON) = 25mΩ(typ.)@VGS = 2.5V RDS(ON) = 30mΩ(typ.)@VGS = 1.8V AM2300 is available in SOT-23 and SOT-23S packages. ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ High power and current handling capability ⚫ Available in SOT-23 and SOT-23S packages ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 SPQ: 3,000pcs/Reel AM2300E3R AM2300E3VR SOT-23S SPQ: 3,000pcs/Reel E3S AM2300E3SR AM2300E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS free products ⚫ Hand-Held Instruments ⚫ Load Switch PIN CONFIGURATION

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 2 - PIN DESCRIPTION Top View Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current TA=25°C 5A TA=70°C 4A IDM, Pulsed Drain CurrentNOTE1 20A PD, Power Dissipation TA=25°C 1.0W TA=70°C 0.6W TJ, Operation Junction Temperature -55°C~150°C TSTG, Storage Temperature Range -55°C~150°C Stresses above may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in th e Electrical Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Typ. Max. Unit Thermal Resistance Junction to AmbientNOTE2 t≦10s RθJA - 95 ℃/W Thermal Resistance Junction to AmbientNOTE2,3 Steady-State - 130

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 20 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.4 0.7 1 V Gate Leakage Current IGSS VDS=0V,VGS=±12V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V, TJ=25°C - - 1 μA VDS=16V,VGS=0V, TJ=75°C - - 10 Drain-Source On-Resistance RDS(ON) VGS=4.5V,ID=5A - 22 26 mΩ VGS=2.5V,ID=3A - 25 29 VGS=1.8V,ID=2A - 30 38 Forward Transconductance gfs VDS=5V, ID=5A - 7 - S Diode Characteristics Diode Forward Voltage VSD IS=1A,VGS=0V - - 1 V Continuous Source Current IS - - 2.5 A Reverse Recovery Time trr IS=5A, dl/dt=100A/μs - 8.5 - ns Reverse Recovery Charge Qrr - 2.7 - nC Dynamic Parameters Total Gate Charge Qg VDS=10V, VGS=4.5V ID=5A - 8 11.2 nC Gate-Source Charge Qgs - 1.2 1.7 Gate-Drain Charge Qgd - 2.5 3.5 Input Capacitance Ciss VDS=10V, VGS=0V f=1MHz - 485 - pF Output Capacitance Coss - 50 - Reverse Transfer Capacitance Crss - 30 - Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz - 1.6 - Ω Turn-On Time td(on) VDD=10V, VGEN=4.5V, RG=25Ω, ID=1.0A - 3.9 7 ns tr - 11 21 Turn-Off Time td(off) - 21 40 tf - 6.8 13 NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. NOTE2: The value of R θJA is measured with t he device mounted on 1in 2 FR-4 board in a still air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). NOTE3: TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used.

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 6 - 7. RDS(ON) vs. Junction Temperature 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Chrge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) Symbol Min Max A 2.800 3.040 B 2.100 2.640 C 1.200 1.400 D 0.890 1.030 E 1.780 2.050 F 0.450 0.600 G 0.013 0.100 H 0.890 1.120 J 0.085 0.180 K 0.370 0.510

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 8 - Dimension in SOT-23S Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP 0.037 TYP e1 1.800 2.000 0.071 0.079 L 0.550 REF. 0.022 REF. L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV2.1 - JUN 2010 RELEASED, JUN 2021 UPDATED - - 9 - IMPORTANT NOTICE AiT S emiconductor In c. (AiT) reserves the right to mak e changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify , before placing orders, that the information bei ng relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server e property, or environmental damage. In order to mini mize risks asso ciated with the customer's applica tions, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.