AM2210 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 1 - DESCRIPTION FEATURES AM2210 is available in a TO-252 package. 200V/25A, RDS(ON)= 70mΩ(max.) @ VGS=10V 100% UIS + Rg Tested Reliable and Rugged Available in a TO-252 package. ORDERING INFORMATION APPLICATION Package Type Part Number TO-252 SPQ: 2,500pcs/Reel D AM2210DR AM2210DVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Power Management in TV Converter. DC-DC Converter. PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 D Drain
3 S Source
AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 200V VGSS, Gate-Source Voltage ±25V TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~+150℃ IS, Diode Continuous Forward Current TC=25°C 12A ID, Continuous Drain Current TC=25°C 25A TC=100°C 16A IDM, Pulsed Drain CurrentNOTE1 TC=25°C 75A PD, Maximum Power Dissipation TC=25°C 113W TC=100°C 45W RθJC, Thermal Resistance-Junction to Case 1.1°C/W ID, Continuous Drain Curren TA=25°C 3.7A TA=70°C 3A PD, Maximum Power Dissipation TA=25°C 2.5W TA=70°C 1.6W RθJA, Thermal Resistance-Junction to AmbientNOTE3 50°C/W IAS, Avalanche Current, Single pulseNOTE2 L=0.5mH 6.5A EAS, Avalanche Energy, Single pulseNOTE2 L=0.5mH 10mJ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Pulse width limited by max. junction temperature. NOTE2: UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C). NOTE3: Surface Mounted on 1in2 pad area.
AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 200 - - V Zero Gate Voltage Drain Current IDSS VDS=160V,VGS=0V - - 1 μA TJ =85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Gate Leakage Current IGSS VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state ResistanceNOTE4 RDS(ON) VGS =10V,ID=12A - 58 70 mΩ Diode Characteristics Diode Forward VoltageNOTE4 VSD ISD=6A, VGS=0V - 0.8 1.3 V Reverse Recovery Time trr ISD=12A, dlSD/dt=100A/μs - 75 - ns Reverse Recovery Charge Qrr - 250 - nC Dynamic CharacteristicsNOTE5 Gate Resistance RG VGS=0V, VDS=0V, f=1MHz - 1.0 - Ω Input Capacitance Ciss VGS=0V, VDS=30V, Frequency=1.0MHz - 2350 3100 pF Output Capacitance Coss - 155 - Reverse Transfer Capacitance Crss - 45 - Turn-on Delay Time td(on) VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω - 16 29 ns Turn-on Rise Time tr - 7 13 Turn-off Delay Time td(off) - 37 67 Turn-off Fall Time tf - 15 28 Gate Charge CharacteristicsNOTE5 Total Gate Charge Qg VDS=100V, VGS=10V, IDS=12A - 40 56 nC Gate-Source Charge Qgs - 14 - Gate-Drain Charge Qgd - 10 - NOTE4: Pulse test ; pulse width≤300μs, duty cycle≤2%. NOTE5: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 7 - Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in TO-252 (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 2.18 2.39 0.086 0.094 A1 - 0.13 - 0.005 b 0.50 0.89 0.020 0.035 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 0.236 E 6.35 6.73 0.250 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 0.090 BSC H 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 L4 - 1.02 - 0.040 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM2210 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advis es its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warra nted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.