AM2144 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 1 - DESCRIPTION FEATURES AM2144 is available in a TO-220 package. 40V/120A, RDS(ON)= 1.9mΩ (max.) @ VGS=10V 100% UIS + Rg Tested Reliable and Rugged Lower RDS(ON) to Minimize Conduction Losses Available in a TO-220 package. ORDERING INFORMATION APPLICATION Package Type Part Number TO-220 SPQ: 50pcs/Tube AM2144T3U AM2144T3VU Note V: Halogen free Package U: Tube AiT provides all RoHS products SMPS Synchronous Rectification Load Switch DC-DC Conversion Or-ing PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 D Drain
3 S Source
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 40V VGSS, Gate-Source Voltage ±20V TJ, Maximum Junction Temperature 175℃ TSTG, Storage Temperature Range -55℃~+175℃ IS, Diode Continuous Forward CurrentNOTE1 TC=25°C 90A ID, Continuous Drain CurrentNOTE1 TC=25°C 120A TC=100°C 120A IDM, Pulsed Drain CurrentNOTE2 TC=25°C 400A PD, Maximum Power Dissipation TC=25°C 176W TC=100°C 88W RθJC, Thermal Resistance-Junction to Case Steady State 0.85°C/W IS, Diode Continuous Forward CurrentNOTE3 TA=25°C 2.2A ID, Continuous Drain CurrentNOTE3 TA=25°C 29A TA=70°C 24.3A IDM, Pulsed Drain CurrentNOTE2 TA=25°C 116A PD, Maximum Power DissipationNOTE3 TA=25°C 2.4W TA=70°C 1.7W RθJA, Thermal Resistance-Junction to AmbientNOTE3 t≦10s 15°C/W Steady-State 62.5°C/W IAS, Avalanche Current, Single pulseNOTE4 L=0.5mH 45A EAS, Avalanche Energy, Single pulseNOTE4 L=0.5mH 506mJ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1：Maximum continue current is limited by bonding wire. NOTE2：Pulse width is limited by maximum junction temperature 175°C. NOTE3：RθJA steady state t=999s. NOTE4：UIS tested and pulse width limited by maximum junction temperature 175°C (Initial temperature TJ=25°C).
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 40 - - V Zero Gate Voltage Drain Current IDSS VDS=32V,VGS=0V - - 1 μA TJ =85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state ResistanceNOTE5 RDS(ON) VGS =10V,ID=25A - 1.6 1.9 mΩ TJ =125°C - 2.4 - Forward Transconductance Gfs VDS=5V, IDS=20A - 3.5 - S Diode Characteristics Diode Forward VoltageNOTE5 VSD ISD=20A, VGS=0V - 0.78 1.1 V Reverse Recovery Time trr ISD=25A, dlSD/dt=100A/μs, VDD=20V - 61 - ns Charge Time ta - 31 - Discharge Time tb - 30 - Reverse Recovery Charge Qrr - 67 - nC Dynamic CharacteristicsNOTE6 Gate Resistance RG VGS=0V, VDS=0V, f=1MHz 0.6 0.9 2 Ω Input Capacitance Ciss VGS=0V, VDS=20V, Frequency=1.0MHz - 5230 - pF Output Capacitance Coss - 2000 - Reverse Transfer Capacitance Crss - 175 - Turn-on Delay Time td(on) VDD=20V, RL=20Ω, IDS=1A, VGEN=10V, RG=1Ω - 18.8 - ns Turn-on Rise Time tr - 9.8 - Turn-off Delay Time td(off) - 50 - Turn-off Fall Time tf - 90.8 - Gate Charge CharacteristicsNOTE6 Total Gate Charge Qg VDS=20V, VGS=10V, IDS=25A - 88.98 - nC Threshold Gate Charge Qgth - 15.84 - Gate-Source Charge Qgs - 24.75 - Gate-Drain Charge Qgd - 15.63 - NOTE5: Pulse test ; pulse width≤300μs, duty cycle≤2%. NOTE6: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Safe Operation Area 6. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 6 - 7. Output Characteristics 8. Drain-Source On Resistance 9. Gate-Source On Resistance 10. Gate Threshold Voltage 11. Drain-Source On Resistance 12. Source-Drain Diode Forward
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 7 - 13. Capacitance 14. Gate Charge 15. Transfer Characteristics
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 8 - Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 9 -
PACKAGE INFORMATION
Dimension in TO-220 (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 3.56 4.83 0.140 0.190 A1 0.51 1.40 0.020 0.055 A2 2.03 2.92 0.080 0.115 b 0.38 1.02 0.015 0.040 b2 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.22 16.51 0.560 0.650 D1 8.38 9.30 0.330 0.366 D2 12.19 13.65 0.480 0.537 E 9.65 10.67 0.380 0.420 E1 6.86 8.89 0.270 0.350 e 2.54 BSC 0.100 BSC H1 5.84 6.86 0.230 0.270 L 12.70 14.73 0.500 0.580 L1 - 6.35 - 0.250 P 3.53 4.09 0.139 0.161 Q 2.54 3.43 0.100 0.135
AiT Semiconductor Inc. www.ait-ic.com AM2144 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - FEB 2019 RELEASED - - 10 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without not ice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, author ized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.