AM12NS10H

AM12NS10H AITSEMI | Alldatasheet

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AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 1 - DESCRIPTION FEATURES The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) packages. Package BVDSS RDSON ID TO-220 100V 10.5 mΩ 55A TO-220F 100V 10.5 mΩ 34.8A TO-252 100V 10.5 mΩ 49A TO-251 100V 10.5 mΩ 49A SOP8 100V 10.5 mΩ 11A TO-263-2 100V 10.5 mΩ 55A PDFN8(5x6) 100V 10.5 mΩ 49A  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifiers  High speed switching applications ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number TO-220 SPQ: 50pcs/ Tube T3 AM12NS10HT3U AM12NS10HT3VU TO-220F SPQ: 50pcs/ Tube T3F AM12NS10HT3FU AM12NS10HT3FVU TO-252 SPQ: 2,500pcs/Reel D AM12NS10HDR AM12NS10HDVR TO-251 SPQ: 75pcs/ Tube TD3 AM12NS10HTD3U AM12NS10HTD3VU SOP8 SPQ: 2,500pcs/Reel M8 AM12NS10HM8R AM12NS10HM8VR TO-263-2 SPQ: 800pcs/Reel S2 AM12NS10HS2R AM12NS10HS2VR PDFN8 (5x6) SPQ: 5,000pcs/Reel PJ8 AM12NS10HPJ8R AM12NS10HPJ8VR Note V: Halogen free Package R: Tape & Reel U: Tube AiT provides all RoHS products Pin# Symbol Function TO-220, TO-220F, TO-251 TO-252, TO-263-2 SOP8, PDFN8(5x6) 1 1 4 G Gate 2 2,4 5,6,7,8 D Drain 3 3 1,2,3 S Source

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS At Tc = 25°C, unless otherwise specified VDSS, Drain-Source Voltage 100V ID Continuous Drain Current, Silicon Limited TO-220F 34.8A TO-252, TO-251 PDFN8(5x6) 49A TO-220, TO-263-2 55A SOP8 11A Continuous Drain Current, Package Limited TO-220F, TO-220, TO-263-2, TO-252, TO-251, PDFN8(5x6) 60A SOP8 20A Continuous Drain Current @TC =100°C, Silicon Limited TO-220F 22A TO-252, TO-251 PDFN8(5x6) 31.5A TO-220, TO-263-2 34.8A SOP8 6.9A IDM (1), Pulsed Drain Current TO-220F 139.2A TO-252, TO-251 PDFN8(5x6) 196A TO-220，TO-263-2 220A SOP8 44A VGS, Gate-Source Voltage ±20V EAS (2), Avalanche Energy TO-220F, TO-220, TO-263-2, SOP8 100mJ TO-252, TO-251 PDFN8(5x6) 56.2mJ PD Power Dissipation TO-220F 27.7W TO-252, TO-251 PDFN8(5x6) 55.9W TO-220, TO-263-2 69.4W SOP8 2.7W Derating Factor above 25°C TO-220F 0.22W/℃ TO-252, TO-251 PDFN8(5x6) 0.447 W/℃ SOP8 0.022 W/℃ TSTG, Storage Temperature Range -55℃~150℃ TJ, Junction Temperature 150℃ TL, Maximum Temperature for Soldering 260℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1)：Repetitive Rating：Pulse width limited by maximum junction temperature. (2)：TO-220F,TO-220,TO-263-2,SOP8 : L=0.5mH, Ias=20A, Start TJ =25℃ TO-252, TO-251, PDFN8(5x6): L=0.5mH, Ias=15A, Start TJ =25℃

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 3 - THERMAL CHARACTERISTICS Parameter Symbol Max Units Thermal resistance, Junction-Ambient TO-220F RθJA 4.5 ℃/W TO-252, TO-251 PDFN8(5x6) 75 TO-220, TO-263-2 62.5 SOP8 45 Thermal resistance, Junction-Case TO-252, TO-251 PDFN8(5x6) RθJC 2.24 ℃/W TO-220, TO-263-2 1.80

ELECTRICAL CHARACTERISTICS

At TC = 25°C, unless otherwise specified Parameter Symbol Conditions Min Typ. Max Units OFF Characteristics Drain-Source Breakdown Voltage VDSS VGS=0V, ID=250μA, 100 110 - V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V, - - 1 μA VDS=80V, VGS=0V, @ TC=125℃ - - 100 μA Gate-Source Forward Leakage IGSS(F) VGS=+20V - - 100 nA Gate-Source Reverse Leakage IGSS(R) VGS=-20V - - -100 nA ON Characteristics Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A. TO-220F, TO-251, TO-252, TO-220, TO-263-2, PDFN8(5x6) - 10.5 12 mΩ VGS=10V, ID=10A. SOP8 Gate Threshold Voltage VGS (th) VDS= VGS, ID=250μA 2 3 4 V Pulse width tp≤300μs,δ≤2%

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 4 - Parameter Symbol Conditions Min Typ. Max Units Dynamic Characteristics Input Capacitance Ciss VDS=50V, VGS=0, f=1MHz - 1680 - pF Output Capacitance Coss - 271 - Reverse Transfer Capacitance Crss - 10 - Total Gate Charge Qg VDD=50V, ID=20A, VGS=10V (TO-220F, TO-251, TO -252, TO - 220, TO-263-2, PDFN8(5x6)) VDD=50V, ID=10A, VGS=10V (SOP8) - 37 - nC Gate-Source charge Qgs - 10.2 - Gate-Drain charge Qgd - 11.3 - Gate resistance RG VGS=0, VDS=0 - 1.3 - Ω Switching Characteristics Turn-On Delay Time td (ON) VDD=50V, ID=10A, VGS=10V,RG = 5Ω Resistive Load - 14.4 - ns Rise Time tr - 13 - Turn-Off Delay Time td (OFF) - 28.8 - Fall Time tf - 15.2 - Source-Drain Diode Characteristics Continuous Source Current IS TO-220F - - 34.8 A TO-252, TO-251 PDFN8(5x6) - - 49 SOP8 10 Maximum Pulsed Current ISM TO-220F - - 139.2 A TO-252, TO-251 PDFN8(5x6) 196 TO-220, TO-263-2 220 SOP8 40 Diode Forward Voltage VSD VGS=0V, IS=20A TO-220F, TO-252 TO-251, TO-220 TO-263-2 PDFN8(5x6) - - 1.2 V VGS=0V, IS=10A SOP8 - - 1.2 Reverse Recovery Time Trr IS=10A, VGS=0, di/dt=250A/us - 168 - ns Reverse Recovery Charge Qrr - 335.8 - nC

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Safe Operating Area (TO-220F) Fig.2 Safe Operating Area (TO-252, TO-251, TO-220, TO-263-2, PDFN8(5x6)) Fig.3 Safe Operating Area (SOP8) Fig.4 Maximum Power Dissipation vs. Case Temperature (TO-220F) Fig.5 Maximum Power Dissipation vs. Case Temperature (TO-252, TO-251, PDFN8(5x6)) Fig.6 Maximum Power Dissipation vs. Case Temperature (SOP8)

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 6 - Fig.7 Maximum Power Dissipation vs. Case Temperature (TO-220, TO-263-2) Fig.8 Maximum Continuous Drain Current vs. Case Temperature (TO-220F) Fig.9 Maximum Continuous Drain Current vs. Case Temperature (TO-252, TO-251, PDFN8(5x6)) Fig.10 Maximum Continuous Drain Current vs. Case Temperature (SOP8) Fig.11 Maximum Continuous Drain Current vs. Case Temperature (TO-220, TO-263-2) Fig.12 Typical Output Characteristics (TO-220F, TO-251, TO-252, TO-220, TO-263-2, PDFN8(5x6))

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 7 - Fig.13 Typical Output Characteristics (SOP8) Fig.14 Transient Thermal Impedance (TO-220F) Fig.15 Transient Thermal Impedance (TO-252, TO-251, TO-220, TO-263-2, PDFN8(5x6))

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 8 - Fig.16 Transient Thermal Impedance (SOP8) Fig.17 Typical Transfer Characteristics Fig.18 Source-Drain Diode Forward Characteristics Fig.19 Drain-Source On-Resistance vs. Drain Current (TO-220F, TO-220, TO-263-2) Fig.20 Drain-Source On-Resistance vs. Drain Current (TO-252, TO-251, PDFN8(5x6))

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 9 - Fig.21 Drain-Source On-Resistance vs. Drain Current (SOP8) Fig.22 Normalized On-Resistance vs. Junction Temperature (TO-220F, TO-251, TO-252, TO-220, TO-263-2, PDFN8(5x6)) Fig.23 Normalized On-Resistance vs. Junction Temperature (SOP8) Fig.24 Normalized Threshold Voltage vs. Junction Temperature Fig.25 Normalized Breakdown Voltage vs. Junction Temperature Fig.26 Capacitance Characteristics

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 10 - Fig.27 Typical Gate Charge vs. Gate-Source Voltage (TO-220F, TO-252, TO-251 TO-220, TO-263-2, PDFN8(5x6)) Fig.28 Typical Gate Charge vs. Gate-Source Voltage (SOP8) Fig.29 Resistive Switching Test Circuit Fig.30 Resistive Switching Waveforms Fig.31 Gate Charge Test Circuit Fig.32 Gate Charge Waveforms

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 11 - Fig.33 Diode Reverse Recovery Test Circuit Fig.34 Diode Reverse Recovery Waveform Fig.35 Unclamped Inductive Switching Test Circuit Fig.36 Unclamped Inductive Switching Waveform

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 12 -

PACKAGE INFORMATION

Dimension in TO-220 (Unit: mm) Symbol Min. Max. A 9.600 10.600 B 15.000 16.000 B1 8.900 9.500 C 4.300 4.800 C1 2.300 3.100 D 1.200 1.400 E 0.700 0.900 F 0.300 0.600 G 1.170 1.370 H 2.700 3.800 L 12.600 14.800 N 2.340 2.740 Q 2.400 3.000 ΦP 3.500 3.900

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 13 - Dimension in TO-220F (Unit: mm) Symbol Min. Max. A 9.600 10.400 B 15.400 16.200 B1 8.900 9.500 C 4.300 4.900 C1 2.100 3.000 D 2.400 3.000 E 0.600 1.000 F 0.300 0.600 G 1.120 1.420 H 1.600 3.800 L 12.000 14.000 N 2.340 2.740 Q 3.150 3.550 ΦP 2.900 3.300

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 14 - Dimension in TO-252 (Unit: mm) Symbol MILLIMETERS Min. Max. A 6.300 6.900 A1 0 0.130 B 5.700 6.300 C 2.100 2.500 D 0.300 0.600 E1 0.600 0.900 E2 0.700 1.000 F 0.300 0.600 G 0.700 1.200 L1 9.600 10.500 L2 2.700 3.100 H 0.600 1.000 M 5.100 5.500 N 2.090 2.490 R 0.300 0.300 T 1.400 1.600 Y 5.100 6.300

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 15 - Dimension in TO-251 Package (Unit: mm) Symbol Min. Max. A 6.300 6.900 B 5.700 6.300 B1 1.000 1.200 B2 6.800 7.400 C 2.100 2.500 D 0.300 0.600 E 0.500 0.700 F 0.300 0.600 G 0.700 1.000 H 1.600 2.400 L 3.900 4.300 M 5.100 5.500 N 2.090 2.490

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 16 - Dimension in SOP8 Package (Unit: mm) Symbol Min Max A 1.350 1.750 A1 0.100 0.250 A2 1.350 1.550 b 0.330 0.510 c 0.170 0.250 D 4.700 5.100 E 3.800 4.000 E1 5.800 6.200 e 1.270(BSC) L 0.400 1.270 θ 0° 8°

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 17 - Dimension in TO-263-2 (Unit: mm) Symbol MILLIMETERS Min. Max. A 9.800 10.400 B 8.900 9.500 B1 0.000 0.100 C 4.400 4.800 D 1.160 1.370 E 0.700 0.950 F 0.300 0.600 G 1.070 1.470 H 1.300 1.800 K 0.950 1.370 L1 14.500 16.500 L2 1.600 2.300 I 0.000 0.200 Q 0° 8° R 0.4° N 2.390 2.690

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 18 - Dimension in PDFN8(5x6) (Unit: mm) Symbol MILLIMETERS Min. Max. A 0.800 1.000 A1 0.000 0.050 b 0.350 0.490 c 0.254 REF D 4.900 5.100 E 5.700 5.900 E1 3.350 3.650 e 1.270 BSC F 1.400 REF G 0.600 REF H 5.950 6.200 J 0.950 BSC K 4.000 REF L - 0.150 L1 0.100 0.180 P 1.000 REF R 0.250 REF θ 6° 14°

AiT Semiconductor Inc. AM12NS10H www.ait-ic.com MOSFET 100V , N-CHANNEL SGT MOSFET REV1.1 - JAN 2023 RELEASED, APR 2024 UPDATED - - 19 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. ‘s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.