AM1214-325 STMICROELECTRONICS | Alldatasheet

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Technical content

RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 325 W MIN. WITH 6.4 dB GAIN

DESCRIPTION

The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed out- put and driver applications. This device is designed for operation under moder- ate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-325 is supplied in the BIGPAC Her- metic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION BRANDING 1214-32 5 ORDER CODE AM1214-325 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 1250 W IC Device Current* 25 A VCC Collector-Supply Voltage* 45 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.10 °C/W *Applies only to rated RF amplifier opera tion AM1214-325 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1200 — 1400MHz P IN = 75W V CC = 45V 325 360 — W ηcf = 1200 — 1400MHz P IN = 75W V CC = 45V 38 45 — % G P f= 1200 — 1400MHz P IN = 75W V CC = 45V 6.4 6.8 — dB Note: Pulse Width = 13µSec Duty Cycle = 2% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 50mA I E = 0mA 65 — — V BV EBO IE = 15mA I C = 0mA 3.0 — — V BV CES IC = 50mA 65 — — V ICES VCE = 50V — — 30 mA hFE VCE = 5V I C = 5A 10 — — — DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT & EFFICIENCY vs FREQUENCY AM1214-325

PIN = 75 W VCC = 45 V Normalized to 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. ZIN (Ω )Z CL (Ω ) AM1214-325

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM1214-325