AM1012 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 1 - DESCRIPTION FEATURES The AM1012 is available in SC-89 Package  TrenchFET® Power MOSFET: 1.8-V Rated  Gate-Source ESD Protected: 2000V  High-Side Switching  Low On-Resistance: 0.7Ω  Low Threshold: 0.8V (typ)  Fast Switching Speed: 10ns  Available in SC-89 Package

ORDERING INFORMATION

V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package BENEFITS  Ease in Driving Switches  Low Offset (Error) Voltage  Low-Voltage Operation  High-Speed Circuits  Low Battery Voltage Operation PIN DESCRIPTION APPLICATION  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers

AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless Otherwise Noted Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±6 V Continuous Drain Current (TJ = 150°C)NOTE2 TA=25°C ID 600 500 mA TA=85°C 400 350 Pulsed Drain Current NOTE1 IDM 1000 Continuous Source Current (diode conduction)NOTE2 IS 275 250 Maximum Power DissipationNOTE2 for SC-75 TA=25°C PD 175 150 mW TA=85°C 90 80 Maximum Power DissipationNOTE2 for SC-89 TA=25°C PD 272 250 TA=85°C 160 140 Operating Junction and Storage Temperature Range TJ, TSTG -55 to150 ℃ Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Pulse width limited by maximum junction temperature. NOTE2: Surface Mounted on FR4 Board.

AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25°C Unless Otherwise Noted Parameter Symbol Conditions Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.45 - 0.9 V Gate-Body Leakage IGSS VDS=0V, VGS=±4.5V - ±0.5 ±1.0 μA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V - 0.3 100 nA VDS=20V, VGS=0V, TJ=85°C - - 5 μA On-State Drain CurrentaNOTE3 ID(on) VDS=5 V, VGS=4.5V 700 - - mA Drain-Source On-State ResistanceaNOTE3 rDS(on) VGS=4.5V, ID=600mA - 0.41 0.70 Ω VGS=2.5V, ID=500mA - 0.53 0.85 VGS=1.8V, ID=350mA - 0.70 1.25 Forward TransconductanceNOTE3 gfs VDS=10V, ID=400mA - 1.0 - S Diode Forward VoltageNOTE3 VSD IS=150mA,VGS=0V - 0.8 1.2 V Dynamic NOTE4 Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=250mA - 750 - pC Gate-Source Charge Qgs - 75 - Gate-Drain Charge Qgd - 225 - Turn-on Delay Time td(ON) VDD=10V, RL=47Ω, ID≅200mA, VGEN=4.5V, RG=10Ω - 5 - ns Rise Time tr - 5 - Turn-off Delay Time td(OFF) - 25 - Fall Time tf - 11 - NOTE3: Pulse test: pulse width ≤300us, duty cycle≤ 2% NOTE4: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Transfer Characteristics 3. On-Resistance vs. Drain Current 4. Capacitance 5. Gate Charge 6. On-Resistance vs. Junction Temperature

AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 6 - 7. Source-Drain Diode Forward Voltage 8. On-Resistance vs. Gate-to-Source Voltage 9. Threshold Voltage Variance vs. Temperature 10. IGSS vs. Temperature 11. BVGSS vs. Temperature

AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 7 - 12. Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) 13. Normalized Thermal Transient Impedance, Junction-to-Foot

AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 8 -

PACKAGE INFORMATION

Dimension in SC-89 (Unit: mm) DIM MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX G 0.500 BSC 0.020 BSC H 0.530 REF 0.021 REF L 1.100 REF 0.043 REF M - - 10° - - 10° N - - 10° - - 10°

AiT Semiconductor Inc. www.ait-ic.com AM1012 MOSFET N-CHANNEL 1.8-V (G-S) MOSFET REV1.0 - SEP 2015 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, spe cifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understo od to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server s property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.