AM1011-300 STMICROELECTRONICS | Alldatasheet

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RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . 4 0 0x. 6 0 02 L F L( M 2 0 7 ) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTING .LOW RF THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 325 W MIN. WITH 7.7 dB GAIN .1030/1090 MHZ OPERATION

DESCRIPTION

The AM1011-300 is a rugged, Class C common base device specifically designed for new Mode- S interrogator and transponder applications. Minimal amplitude droop over the heavy Mode-S pulse burst is guaranteed by a thermal design in- corporating an overlay site-ballasted die geome- try. PIN CONNECTION BRANDING AM1011-300 ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation (TC ≤100°C)* 1070 W IC Device Current* 36 A VCC Collector-Supply Voltage* 43 V TJ Junction Temperature (Pulsed RF operation) +250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.14 °C/W *Applies only to rated RF amplifier operation. AM1011-300 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA ORDER CODE AM1011-300 December 9, 1997 1/5

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1090 MHz P IN = 55 W V CC = 40 V 325 350 — W hc f= 1090 MHz P OUT = 325 W V CC = 40 V 40 45 — % G P f= 1090 MHz P OUT = 325 W V CC = 40 V 7.7 8.0 — dB Pulse Conditions: Pulse width = 200µs, Duty Cycle = 5%, are equivalent to the following pulse burst conditions: Mode-S Interrogator (freq = 1030MHz) 32 pulses, 32µs on, 18µ s off, burst period = 17.6ms long term duty = 5.82% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 75 mA I E = 0m A 65 — — V BV CES IC = 75 mA V BE = 0V 65 — — V BV EBO IC = 25 mA I C = 0m A 3.0 — — V ICES VCE = 40 V V BE = 0V — — 30 mA hFE VCE = 5V I C = 10 A 1 0 ——— DYNAMIC AM1011-300 2/5 December 9, 1997

POWER OUTPUT vs POWER INPUT @ 1030 MHz POWER OUTPUT vs POWER INPUT @1 0 9 0M H z MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH TC =4 0°C PIN = 50W VCC = 40V Duty Cycle = 5% AM1011-300 December 9, 1997 3/5

FREQ. ZIN(Ω )Z CL (Ω ) 1030 MHz 0.7 + j 4.1 0.78− j 2.4 1090 MHz 0.65 + j 4.2 0.4− j 2.4 PIN = 55W ZIN TYPICAL INPUT IMPEDANCE ZCL TYPICAL COLLECTOR LOAD IMPEDANCE DATA TEST CIRCUIT AM1011-300 4/5 December 9, 1997

Ref.: Dwg. No. 12-0207 UDCS No. 1011408 rev B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1997 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. AM1011-300 December 9, 1997 5/5