AM1011-070 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

RF & MICROWAVE TRANSISTORS September 1992 L-BAND AVIONICS APPLICATIONS .400 x .400 2NLFL (S042) hermetical ly sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P OUT = 70 W MIN. WITH 6.7 dB GAIN

DESCRIPTION

The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and is capable of withstanding severe output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM1011-070 is supplied in the AMPAC Her- metic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION BRANDING 1011-70 ORDER CODE AM1011-7 0 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 200 W IC Device Current* 8.0 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.68 °C/W *Applies only to rated RF amplifier opera tion AM1011-070 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1090 MHz P IN = 15W V CC = 28V 70 — — W ηcf = 1090 MHz P IN = 15W V CC = 28V 45 — — % G P f= 1090 MHz P IN = 15W V CC = 28V 6.7 — — dB Note: Pulse Width = 100 µSec Duty Cycle = 2% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 25mA I E = 0mA 55 — — V BV EBO IE = 10mA I C = 0mA 3.5 — — V BV CER IC = 25mA R BE = 10Ω 55 — — V ICES VCE = 35V — — 20 mA hFE VCE = 5V I C = 2mA 20 — 200 — DYNAMIC AM1011-070

All dimensions are in inches. Substrate material: .025 thick AI2O 3 C1 : 0.3—3.5 pF Johanson Gigatrim Capacitor C2 : 0.3—3.5 pF Johanson Gigatrim Capacitor C3 : 100 pF Chip Capacitor C4 : 1500 pF Erie Feedthru, or Equiv. C5 : 100 MF Electrolytic Capacitor, 50V C6 : 1500 pF Erie Feedthrough, or Equiv. L1 : #32 Wire, 4 Turn .062 I.D. L2 : #32 Wire, 4 Turn .062 I.D. RBE : 0 — 1.0 Ohm Ref. Dwg. No. J313119 TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE PIN = 15 W VCC = 28 V Normalized to 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) L = 1025 MHz 4.7 + j 4.7 3.6 + j 4.3 H = 1090 MHz 4.7 + j 3.9 3.3 + j 4.4 AM1011-070

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM1011-070