AM0912-300 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .15:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 300 W MIN. WITH 7.0 dB GAIN .BANDWIDTH 255 MHz
DESCRIPTION
The AM0912-300 avionics power transistor is a broadband, high peak pulse power device speci- fically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. The AM0912-300 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. This device is capable of withstanding 15:1 VSWR mismatch load condition at any phase angle under full rated conditions. The AM0912-300 is housed in the unique BIG- PAC Hermetic Metal/Ceramic package with in- ternal Input/Output matching structures. PIN CONNECTION BRANDING 0912-300 ORDER CODE AM0912-300 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 940 W IC Device Current* 24 A VCC Collector-Supply Voltage* 50 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.16 °C/W *Applies only to rated RF amplifier opera tion AM0912-300 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 960 — 1215MHz P IN = 60W V CC = 50V 300 330 — W ηcf = 960 — 1215MHz P IN = 60W V CC = 50V 38 45 — % G P f= 960 — 1215MHz P IN = 60W V CC = 50V 7.0 7.4 — dB Note: Pulse Width = 10µSec Duty Cycle = 10% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 50mA I E = 0mA 65 80 — V BV EBO IE = 15mA I C = 0mA 3.0 — — V BV CER IC = 50mA R BE = 10Ω 65 — — V ICES VCE = 50V — — 30 mA hFE VCE = 5V I C = 5A 10 — — — DYNAMIC AM0912-300
Conditions: PW = 10 µs, 10% VCC = 50 V TYPICAL BROADBAND RESPONSE TYPICAL POWER OUTPUT vs POWER INPUT MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE AM0912-300
PIN = 60 W VCC = 50 V ZO = 50 ohms PIN = 60 W VCC = 50 V ZO = 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) L = 960 MHz 2.0 + j 3.6 1.7 − j 2.2 M = 1090 MHz 3.5 + j 1.7 2.0 − j 1.7 H = 1215 MHz 1.6 + j 0.5 1.8 − j 2.0 AM0912-300
.200 .130 Ref. Dwg. No. C125519 .125 .190 .100 TEST CIRCUIT AM0912-300
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