AM0912-150 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 150 W MIN. WITH 7.5 dB GAIN .BANDWIDTH = 255MHz
DESCRIPTION
The AM0912-150 is designed for specialized avionics applications including Mode-S, TCAS and JTIDS, where power is provided under pulse for- mats utilizing short pulse widths and high burst or overall duty cycles. The AM0912-150 is housed in the unique BIG- PAC Hermetic Metal/Ceramic package with in- ternal Input/Output matching structures. PIN CONNECTION BRANDING 0912-150 ORDER CODE AM0912-150 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 300 W IC Device Current* 16.5 A VCC Collector-Supply Voltage* 35 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.57 °C/W *Applies only to rated RF amplifier opera tion AM0912-150 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 960 — 1215MHz P IN = 26.7W V CC = 35V 150 — — W ηcf = 960 — 1215MHz P IN = 26.7W V CC = 35V 45 — — % G P f= 960 — 1215MHz P IN = 26.7W V CC = 35V 7.5 — — dB Note: Pulse Format: 6.4 µ So n6 . 6µS off; repeat for 3.3 ms, then off for 4.5125 ms Duty Cycle: Burst 49.2% overall 20.8% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 60mA I E = 0mA 55 65 — V BV EBO IE = 10mA I C = 0mA 3.5 — — V BV CES IC = 100mA 55 — — V ICES VCE = 35V — — 25 mA hFE VCE = 5V I C = 5A 20 — — — DYNAMIC AM0912-150
TYPICAL POWER INPUT, POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE VCC = 28-35V PIN ≅ 26W TC <4 5°C AM0912-150
PIN = 26.7 W VCC = 35 V ZO * = 10 ohms PIN = 26.7 W VCC = 35 V ZO * = 10 ohms *Normalized Impedance IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) L = 960 MHz 2.1 + j 3.8 3.8 − j 3.6
- = 1000 MHz 1.5 + j 3.1 3.0 − j 2.4 M = 1050 MHz 1.2 + j 2.5 2.5 − j 2.0
- = 1150 MHz 1.5 + j 2.4 2.0 − j 2.0 H = 1215 MHz 1.7 + j 2.4 2.0 − j 2.5 AM0912-150
Ref: Dwg. No. C127513 TEST CIRCUIT AM0912-150
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM0912-150