AM0904 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 1 - DESCRIPTION FEATURES The AM0904 is available in DFN8(5x6) package.
ORDERING INFORMATION
DFN8(5x6) SPQ: 4,000pcs/Reel AM0904J8R AM0904J8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Channel 1 30V/48A, RDS(ON) = 7mΩ (max.) @ VGS = 10V RDS(ON) = 10mΩ (max.) @ VGS = 4.5V Channel 2 30V/50A, RDS(ON) = 4mΩ (max.) @ VGS =10V RDS(ON) = 5.9mΩ (max.) @ VGS =4.5V 100% UIS + Rg Tested Reliable and Rugged Available in DFN8(5x6) package
APPLICATIONS
Power Management in Desktop Computer or DC/DC Converters. PIN DESCRIPTION N-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G1 Gate 1
2 D1 Drain 1
3 D1 Drain 1
4 D1 Drain 1
5 S2 Source 2
6 S2 Source 2
7 S2 Source 2
8 G2 Gate 2
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted Parameter Channel1 Channel 2 Units VDSS, Drain-Source Voltage 30 V VGSS, Gate-Source Voltage ±20 V TJ, Maximum Junction Temperature 150 °C TSTG, Storage Temperature Range -55 ~ 150 °C IS, Diode Continuous Forward Current 5 20 A IDMNOTE2, Pulse Drain Current Tested TC=25°C 120 150 A IDNOTE1, Continuous Drain Current TC=25°C 48 50 A TC=100℃ 30 31.8 PD, Maximum Power Dissipation TC=25°C 25 41 W TC=100℃ 10 16 RθJC, Thermal Resistance-Junction to Case Steady State 5 3 °C/W IDM, Pulse Drain Current Tested TA=25°C 48 80 A ID, Continuous Drain Current TA=25°C 12 20 A TA=70°C 9.5 16 PD, Maximum Power Dissipation TA=25°C 1.6 2.7 W TA=70°C 1 1.7 RθJA, Thermal Resistance-Junction to Ambient t ≤ 10s 40 20 °C/W Steady State 80 45 W IASNOTE3, Avalanche Current, Single pulse L=0.5mH 14 16.8 A EASNOTE3, Avalanche Energy, Single pulse L=0.5mH 50 70.56 mJ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Package is limited to 50A. NOTE2: Pulse width limited by max. junction temperature. NOTE3: UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C).
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 4 - CHANNEL 1 ELECTRICAL CHARACTERISTICS TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 μA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250μA 1.5 1.8 2.5 V Gate Leakage Current IGSS VDS=0V, VGS=±20V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE4 VGS=10V, IDS=15A - 5.8 7 mΩ TJ=125°C - 8.4 - VGS=4.5V, IDS=10A - 7.7 10 Forward Transconductance gfs VDS=5V, IDS=15A - 29 - S Diode Characteristics Diode Forward Voltage VSDNOTE4 ISD=2A, VGS=0V - 0.75 1.1 V Reverse Recovery Time trr IDS=15A, dlSD/dt=100A/μs - 12 - ns Charge Time ta - 6 - Discharge Time tb - 6 - Reverse Recovery Charge Qrr - 2.9 - nC Dynamic CharacteristicsNOTE5 Gate Resistance RG VGS=0V, VDS=0V, f=1MHz - 0.7 1.5 Ω Input Capacitance Ciss VDS=15V, VGS=0V, Frequency=1.0MHz - 1180 1534 pF Output Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 110 - Turn-On Delay Time td(on) VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω - 9 14 ns Turn-On Rise Time tr - 8 13 Turn-Off Delay Time td(off) - 25 40 Turn-Off Fall Time tf - 8 14 Gate Charge CharacteristicsNOTE5 Total Gate Charge Qg VDS=15V, VGS=4.5V, IDS=15A - 10 14 nC Total Gate Charge Qg VDS=15V, VGS=10V, IDS=15A - 20 - Threshold Gate Charge Qgth - 2.2 - Gate-Source Charge Qgs - 4 - Gate-Drain Charge Qgd - 3.8 - NOTE4: Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. NOTE5: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 5 - CHANNEL 2 ELECTRICAL CHARACTERISTICS TJ = 25°C, unless otherwise specified Parameter Symbol Conditions Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 μA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250μA 1.4 1.8 2.5 V Gate Leakage Current IGSS VDS=0V, VGS=±20V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE4 VGS=10V, IDS=30A - 3.3 4 mΩ TJ=125°C - 4.9 - VGS=4.5V, IDS=15A - 4.5 5.9 Forward Transconductance gfs VDS=5V, IDS=10A - 23 - S Diode Characteristics Diode Forward Voltage VSDNOTE4 ISD=1A, VGS=0V - 0.8 1.1 V Reverse Recovery Time trr IDS=30A, dlSD/dt=100A/μs - 37 - ns Charge Time ta - 21 - Discharge Time tb - 16 - Reverse Recovery Charge Qrr - 23 - nC Dynamic CharacteristicsNOTE5 Gate Resistance RG VGS=0V, VDS=0V, f=1MHz - 1.3 2.6 Ω Input Capacitance Ciss VDS=15V, VGS=0V, Frequency=1.0MHz - 1280 1664 pF Output Capacitance Coss - 800 - Reverse Transfer Capacitance Crss - 64 - Turn-On Delay Time td(on) VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω - 14.3 26 ns Turn-On Rise Time tr - 10 18 Turn-Off Delay Time td(off) - 30 54 Turn-Off Fall Time tf - 32.6 59 Gate Charge CharacteristicsNOTE5 Total Gate Charge Qg VDS=15V, VGS=4.5V, IDS=30A - 9.1 - nC Total Gate Charge Qg VDS=15V, VGS=10V, IDS=30A - 19.6 27.5 Threshold Gate Charge Qgth - 2.2 - Gate-Source Charge Qgs - 3.5 - Gate-Drain Charge Qgd - 2.4 - NOTE4: Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. NOTE5: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 6 - CANNEL 1 TYPICAL ELECTRICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 7 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 8 - 13. Transfer Characteristics
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 9 - CHANNEL 2 TYPICAL ELECTRICAL CHARACTERISTICS 14. Power Dissipation 15. Drain Current 16. Safe Operation Area 17. Thermal Transient Impedance 18. Output Characteristics 19. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 10 - 20. Gate-Source On Resistance 21. Gate Threshold Voltage 22. Drain-Source On Resistance 23. Source-Drain Diode Forward 24. Capacitance 25. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 11 - 26. Transfer Characteristics Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 12 -
PACKAGE INFORMATION
Dimension in DFN8(5x6) Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 0.85 1.10 0.033 0.043 A1 0.00 0.05 0.000 0.002 b 0.33 0.51 0.013 0.020 c 0.15 0.30 0.006 0.012 D1 4.80 5.20 0.189 0.205 D2 3.61 4.70 0.142 0.185 D3 2.55 3.22 0.100 0.127 E 5.55 5.80 0.219 0.228 E1 5.90 6.10 0.232 0.240 E2 2.02 2.50 0.080 0.098 E3 0.40 0.60 0.016 0.024 E4 1.10 1.42 0.043 0.056 e 1.27 BSC 0.050 BSC L 0.35 0.71 0.014 0.028 L1 0.00 0.10 0.000 0.004 L2 0.48 0.81 0.019 0.032 θ 0° 12° 0° 12°
AiT Semiconductor Inc. www.ait-ic.com AM0904 MOSFET DUAL N -CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2019 RELEASED - - 13 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or w arranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of d eath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liabilit y to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.