AM0608-450 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed .REFRACTORY/GOLD METALLIZATION .INPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 445 W MIN. WITH 6.9 dB GAIN
DESCRIPTION
The AM0608-450 is an internally-matched, com- mon base silicon bipolar device optimized pulsed application in the 600 - 750 MHz frequency range. Housed in the industry-standard BIGPAC™ met- al/ceramic package, this device uses a refrac- tory/gold overlay die geometry for ruggedness and long-term reliability. PIN CONNECTION BRANDING 0608-450 ORDER CODE AM0608-450 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 50˚C) 1500 W IC Device Current* 32 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.13 °C/W *Applies only to rated RF amplifier operation AM0608-450 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value UnitMin. Typ. Max. POUT f = 600 — 750MHz P IN = 90W V CC = 50V 445 — — W ηcf = 600 — 750MHz P IN = 90W V CC = 50V 35 — — % G P f = 600 — 750MHz P IN = 90W V CC = 50V 6.9 — — dB Note: Pulse Width = 10µS Duty Cycle = 1% STATIC Symbol Test Conditions Value UnitMin. Typ. Max. BV CBO IC = 50mA I E = 0mA 65 — — V BV EBO IE = 5mA I C = 0mA 3.5 — — V BV CER IC = 50mA R BE = 10Ω 65 — — V ICES VCE = 50V — — 35 mA ICBO VCB = 50V — — 25 mA hFE VCE = 5V I C = 1A 15 — 300 — DYNAMIC TEST CIRCUIT AM0608-450
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