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AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 1 - DESCRIPTION FEATURE The AM04N80 is available in TO-251, TO-252 Package
- Proprietary New P lanar Technology
- R DS(ON),typ.=3.7 Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode APPLICATION
- CRT
- T V / M o n i t o r ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number TO-251 SPQ: 75pcs /Tube TS3 AM04N80TS3U AM04N80TS3VU TO-252 SPQ: 2,500pcs/Reel D AM04N80DR AM04N80DVR Note V: Halogen free Package R: Tape & Reel U: Tube AiT provides all RoHS products Pin# Symbol Function
1 G Gate
2 D Drain
3 S Source
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise specified. Parameter Symbol Value Unit Drain-to-Source Voltage (1) V DSS 8 0 0 V Gate-to-Source Voltage V GSS ± 3 0 Continuous Drain Current I D 4 A Continuous Drain Current @ Tc=100℃ I D @ Tc =100℃ Fig 3. Pulsed Drain Current at VGS=10V (2) I DM Fig 6. Single Pulse Avalanche Energy E AS 6 5 0 m J Peak Diode Recovery dv/dt (3) dv/dt 5.0 V/ns Power Dissipation PD 85 W Derating Factor above 25℃ 0.68 W/℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds T L TPAK 300 260 ℃ Operating and Storage Temperature Range T J& TSTG -55 to 150 THERMAL RESISTANCE Thermal Resistance, Junction-to-Case RθJC 1.47 ℃/W Thermal Resistance, Junction-to-Ambient R θJA 7 5 (2) Repetitive rating; pulse width limited by maximum junction temperature. Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond thos e indicated in the Electrica l Characteristics are not impli ed. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 3 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS=0V, ID=250uA 800 V Drain-to-Source Leakage Current I DSS VDS=800V, VGS=0V 1 uA VDS=640V, VGS=0V, TA =125℃ 100 Gate-to-Source Leakage Current I GSS VGS=+30V, VDS=0V +100 nA VGS=-30V, VDS=0V -100 ON CHARACTERISTICS Static Drain-to-Source On-Resistance (4) R DS(ON) V GS=10V, ID=2.0A 3.7 4.8 Ω Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250uA 2.0 4.0 V Forward Transconductance (4) g f s V DS=15V, ID=4.0A 5.5 S Dynamic CHARACTERISTICS Input Capacitance C iss VGS=0V, VDS=25V, f=1.0MHZ 490 pF Reverse Transfer Capacitance C rss 2 5 Output Capacitance C oss 5 0 Total Gate Charge Q g VDD=400V, ID=4A, VGS=0 to 10V 1 6 nC Gate-to-Source Charge Q gs 3 . 0 Gate-to-Drain (Miller) Charge Q gd 6 . 0 Resistive Switching CHARACTERISTICS Turn-on Delay Time t d(ON) VDD=400V, ID=4A, VGS=10V RG=12Ω 1 0 nS Rise Time t rise 1 0 Turn-Off Delay Time t d(OFF) 3 0 Fall Time t fall 1 5 Source-Drain Diode CHARACTERISTICS Continuous Source Current (4) I SD Integral PN-diode in MOSFET 4 . 0 A Pulsed Source Current (4) I SM 1 6 Diode Forward Voltage V SD I S=4.0A, VGS=0V 1.5 V Reverse Recovery Time t rr VGS=0V, IF=4.0A, diF/dt=100A/μs 235 ns Reverse Recovery Charge Q rr 446 nC (3) ISD= 4A di/dt < 100 A/μs, VDD < BVDSS, TJ=+150℃. (4) Pulse width≤380µs; duty cycle≤2%.
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS Fig 1. Maximum Effective Thermal Impedance, Junction-to-Case Fig 2. Maximum Power Dissipation vs Case Temperature Fig 3. Maximum Continuous Drain Current vs Case Temperature Fig 4. Typical Output Characteristics Fig 5. Typical Drain-to-Source ON Resistance V s G a t e V o l t a g e a n d D r a i n C u r r e n t
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 5 - Fig 6. Maximum Peak Current Capability tp, Pulse Width (S) Fig 7. Typical Transfer Characteristics Fig 8. Unclamped Induct ive Switching Capability Fig 9. Typical Drain-to-Source ON Resistance vs Drain Current Fig 10. Typical Drain-to-Source ON Resistance vs Junction Temperature
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 6 - Fig11. Typical Breakdown Voltage vs Junction Temperature Fig 12. Typical Threshold Voltage vs Junction Temperature Fig 13. Maximum Safe Operating Area Fig 14. Typical Capacitanc e vs Drain-to-Source Voltage Fig 15. Typical Gate Charge vs Gate-to-Source Voltage Fig 16. Typical Body Diode Transfer Characteristics
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 7 - TEST CIRCUITS AND WAVEFORMS Fig 17. Peak Diode Recovery dv/dt Test Circuit Fig 18. Peak Diode Recovery dv/dt Waveforms
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 8 - Fig 19. Switching Test Circuit Fig 20. Switching Waveforms Fig 21. Gate Charge Test Circuit Fig 22. Gate Charge Waveform Fig 23. Unclamped Inductive Switching Test Circuit Fig 24. Uncl amped Inductive Switching Waveforms
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 9 -
PACKAGE INFORMATION
Dimension in TO-251 (Unit: mm)
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 10 - Dimension in TO-252 (Unit: mm) Symbol Min. Max. A 6.3 6.7 B 5.1 5.5 b 0.3 0.8 C 2.1 2.5 D 5.9 6.3 E 0.4 0.6 F 1.3 1.8 G 2.29TYPICAL H 0.45 0.55 L 2.7 3.1 L1 0.8 1.2 L2 0.6 1.0 L3 1.40 1.75 S 0.0 0.1 M 1.8 TYPICAL N 1.3 TYPICAL J 3.16 ref. K 1.80 ref. T 4.83 ref.
AiT Semiconductor Inc. AM04N80 www.ait-ic.com MOSFET 800V, 4A N-CHANNEL REV1.0 - JUL 2022 RELEASED - - 11 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without n otice, and advises its customers to obtain the latest version of relevant information to verify, before placin g orders, that the information being relied on is current. AiT Semiconductor Inc. integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or syste ms or other critical applications. Use of AiT products in such applications is understood to be fully at the r i s k o f t h e c u s t o m e r . A s u s e d h e r e i n m a y involve potential risks of death, personal injury, or server pr o p e r t y , o r e n v i r o n m e n t a l d a m a g e . I n o r d e r t o minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes t o no liability to customer prod uct design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.