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AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 1 - DESCRIPTION FEATURE The AM04N65 is available in TO220F Package. APPLICATION

  • Adaptor
  • Charger
  • SMPS Standby Power
  • RDS (ON),typ.=2.1 Ω@VGS=10V
  • High Current Rating
  • Lower Capacitance
  • Lower Total Gate Charge Minimize Switching Loss
  • Fast Recovery Body Diode ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number TO220F SPQ:50pcs /Tube T3F AM04N65T3FU AM04N65T3FVU Note V: Halogen free Package U: Tube AiT provides all RoHS products Pin# Symbol Function

1 G Gate

2 D Drain

3 S Source

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise specified. Parameter Symbol Value Unit Drain-to-Source Voltage V DSS 6 5 0 V Gate-to-Source Voltage V GSS ± 3 0 Continuous Drain Current I D 4 . 0 A Pulsed Drain Current at VGS=10V I DM 1 6 Single Pulse Avalanche Energy E AS 2 5 0 m J Power Dissipation PD 30 W Derating Factor above 25℃ 0.24 W/℃ Soldering Temperature Distance of 1.6mm from case for 10 seconds TL 3 0 0 ℃ Operating Temperature Range T J -55 to 150 ℃ Storage Temperature Range T STG -55 to 150 ℃ THERMAL RESISTANCE Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 4.17 ℃/W Thermal Resistance, Junction-to-Ambient R θJA 1 0 0 Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond thos e indicated in the Electrica l Characteristics are not impli ed. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS=0V, ID=250uA 650 V Drain-to-Source Leakage Current I DSS VDS=650V, VGS= 0 V 1 uA VDS=520V, VGS=0V, TA =125℃ 1 0 0 Gate-to-Source Leakage Current I GSS VGS=+20V, VDS=0V +10 uA VGS=-20V, VDS=0V -10 ON CHARACTERISTICS Static Drain-to-Source On-Resistance R DS(ON) V GS=10V, ID=2.0A 2.1 2.5 Ω Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250uA 2.0 4.0 V Forward Transconductance gfs V DS=15V, ID=2.0A 5.0 S Dynamic CHARACTERISTICS Input Capacitance C iss VGS=0V, VDS=25V, f=1.0MHz 450 pF Reverse Transfer Capacitance C rss 6.0 Output Capacitance C oss 5 0 Total Gate Charge Q g VDD=325V, ID=4A, VGS=0 to 10V 8 . 5 nC Gate-to-Source Charge Q gs 2.8 Gate-to-Drain (Miller) Charge Q gd 2 . 5 Resistive Switching CHARACTERISTICS Turn-on Delay Time t d(ON) VDD=325V, ID=4A, VGS=10V Rg=4.7Ω 9 . 0 nS Rise Time trise 7.0 Turn-Off Delay Time t d(OFF) 2 2 Fall Time tfall 9.0 Source-Drain Diode CHARACTERISTICS Continuous Source Current * I SD Integral PN- diode in MOSFET 4 . 0 A Pulsed Source Current * I SM 1 6 Diode Forward Voltage V SD I S=4A, VGS=0V 1.5 V Reverse Recovery Time t rr VGS=0V IF= IS, di/dt=100A/µs 235 ns Reverse Recovery Charge Q rr 750 nC *Pulse width≤380µs; duty cycle≤2%.

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS Fig 1. Maximum Transient Thermal Impedance Fig 2. Maximum Power Dissipation vs Case Temperature Fig 3. Maximum Continuous Drain Current vs Case Temperature Fig 4. Typical Output Characteristics Fig 5. Typical Drain-to-S ource ON Resistance V s G a t e V o l tage and Drain Current

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 5 - Fig 6. Maximum Peak Current Capability Fig 7. Typical Transfer Characteristics Fig 8. Unclamped Induct ive Switching Capability Fig 9. Typical Drain-to-Source ON Resistance vs Drain Current Fig 10. Typical Drain-to-Source ON Resistance vs Junction Temperature

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 6 - Fig11. Typical Breakdown Voltage vs Junction Temperature Fig 12. Typical Threshold Voltage vs Junction Temperature Fig 13. Maximum Safe Operating Area Fig 14. Typical Capacitance vs Drain-to-Source Voltage Fig 15. Typical Gate Charge Fig 16. Typical Body Diode Transfe r Characteristics

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 7 - TEST CIRCUITS AND WAVEFORMS Fig. 17 Peak Diode Recovery dv/dt Test Circuit Fig. 18 Peak Diode Recovery dv/dt Waveforms

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 8 - Fig 19. Switching Test Circuit Fig 20. Switching Waveforms Fig 21. Gate Charge Test Circuit Fig 22. Gate Charge Waveform Fig 23. Unclamped Inductive Switching Test Circuit Fig 24. Uncl amped Inductive Switching Waveforms

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 9 -

PACKAGE INFORMATION

Dimension in TO-220F (Unit: mm) Symbol Min. Max. A 9.70 10.30 B 15.50 16.10 B1 8.99 9.39 C 4.40 4.80 C1 2.15 2.55 D 2.50 2.90 E 0.70 0.90 F 0.40 0.60 G 1.12 1.42 H 3.40 3.80 L 12.6 13.6 N 2.34 2.74 Q 3.15 3.55 ΦP 3.00 3.30

AiT Semiconductor Inc. AM04N65 www.ait-ic.com MOSFET 650V, 4A N-CHANNEL REV1.0 - JUN 2022 RELEASED - - 10 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without n otice, and advises its customers to obtain the latest version of relevant information to verify, before placin g orders, that the information being relied on is current. AiT Semiconductor Inc. integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or syste ms or other critical applications. Use of AiT products in such applications is understood to be fully at the r i s k o f t h e c u s t o m e r . A s u s e d h e r e i n m a y involve potential risks of death, personal injury, or server pr o p e r t y , o r e n v i r o n m e n t a l d a m a g e . I n o r d e r t o minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes t o no liability to customer prod uct design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.