AM038D1-00 ALPHA | Alldatasheet
Document overview
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Technical content
Features
I Low Conversion Loss, 6.5 dB I Insensitive to LO Power Variations I Low LO Power Requirement, 9 dBm I High LO to RF Isolation, 30 dB I No DC Bias Required
Description
Alpha’s double balanced GaAs Schottky diode mixer has a typical conversion loss of 6.5 dB at an LO power level as low as 9 dBm over the band 33–43 GHz.The chip uses Alpha’s proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance. Dimensions indicated in mm. All pads are ≥ 0.07 mm wide. Chip thickness = 0.1 mm. Chip Outline Parameter Symbol Min. Typ. 2 Max. Unit RF and LO Frequency Range F RF, FLO 33–43 GHz IF Frequency Range F IF 0–5 GHz LO Power Level PLO 9–21 dBm Conversion Loss1 LC 6.5 dB RF and LO Return Loss1 RLRF, RLLO 18 dB LO to RF Isolation1 ISOLO-RF 30 dB LO to IF Isolation1 ISOLO-IF 25 dB RF Input 1 dB Compression Point1 P1 dB 7 dBm Two Parallel Diode Series Resistance R S 1.5 Ω Electrical Specifications at 25°C
50 OHMS50 OHMS 50 OHMS50 OHMS
OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92 OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92 0.000 0.000 1.785 1.258 2.010 0.951 0.085 0.085 0.889 0.490 Absolute Maximum Ratings Characteristic Value Operating Temperature -55 °C to +125°C Storage Temperature -65 °C to +150°C Total Input Power (RF + LO) 23 dBm AM038D1-00 1. Not measured on a 100% basis. 2. Typical represents the median parameter value across the specified frequency range for the median chip.
33–43 GHz GaAs MMIC Double Balanced Down Converter Mixer AM038D1-00 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 2/00A 46 81 0 1 2 1 4 1 6 1 8 Performance vs. LO Power FRF = 38 GHz, FLO = 37 GHz, PRF = -10 dBm LO Power (dBm) Conversion Loss (dB) Return Loss & Isolation (dB) Conversion Loss LO Return Loss LO to RF Isolation LO to IF Isolation 01234 1 0 89765 Performance vs. IF Frequency FRF = 38 GHz, FLO = FRF - FIF, PLO = 9 dBm IF Frequency (GHz) Conversion Loss (dB) OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92 OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92 RF IF LO OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92 OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92 RF IF LO 90˚ Phase Shifter/Splitter LO IF RF 31 32 33 34 35 39 383736 Performance vs. LO Frequency FRF = FLO + 1 GHz, PLO = 9 dBm LO Frequency (GHz) Conversion Loss (dB) Return Loss & Isolation (dB) Conversion Loss LO Return Loss LO to RF Isolation LO to IF Isolation Typical Performance Data Wire Bonding Configurations Circuit Schematic Single IF bond configuration. Requires two IF bonds. LO to IF isolation is degraded by 7 dB for this configuration.