AM032NS08H AITSEMI | Alldatasheet
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AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 1 - DESCRIPTION FEATURE The AM032NS08H is available in TOLL-8 Package. VDSS RDSON ID 85V 2.6mΩ 200A Fast Switching Low On-Resistance Low Gate Charge Low Reverse Transfer Capacitances High Avalanche Ruggedness APPLICATION PIN DESCRIPTION BMS High Current Switching Pin# Symbol Function
1 G Gate
9 D Drain
2,3,4,5,6,7,8 S Source
ORDERING INFORMATION
SPQ: 1,200pcs/Reel PH8 AM032NS08HPH8R AM032NS08HPH8VR Note R: Tape & Reel V: Halogen free Package AiT provides all RoHS products
AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TC=25℃, unless otherwise specified VDSS, Drain-Source Voltage 85V ID, Continuous(Drain Current Silicon Limited 200A Package Limited 240A TC=100°C, Silicon Limited 125.9A IDM(1), Pulsed Drain Current 800A VGS, Gate-Source Voltage ±20V EAS(2), Avalanche Energy 625mJ PD, Power Dissipation 208.3W PD, Derating Factor above 25℃ 1.66 W/℃ TJ, Operating Junction Temperature Range 150℃ TSTG, Storage Temperature Range -55℃~+150℃ TL, Maximum Temperature for Soldering 260℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Repetitive Rating：Pulse width limited by maximum junction temperature (2) L=0.5mH, Ias=50A, Start TJ=25℃ THERMAL CHARACTERISTICS Parameter Symbol Value Units Thermal Resistance, Junction-Case RθJC 0.6 ℃/W Thermal Resistance, Junction-Ambient RθJA 62.5
AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 3 -
ELECTRICAL CHARACTERISTICS
TC = 25°C, unless otherwise specified Parameter Symbol Conditions Min Typ. Max Unit OFF Characteristics Drain-Source Breakdown Voltage VDSS VGS=0V, ID=250μA 85 95 - V Drain-Source Leakage Current IDSS VDS= 85V, VGS=0V - - 1 μA VDS= 68V, VGS=0V, TC=125℃ - - 100 Gate-Source Forward Current IGSS(F) VGS =+20V - - 100 nA Gate-Source Reverse Current IGSS(R) VGS =-20V - - -100 ON Characteristics Drain-Source On-Resistance RDS(on) VGS=10V, ID=50A - 2.6 3.2 mΩ Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 3 4 V Pulse width tp≤300µs, δ≤2% Dynamic Characteristics Input Capacitance Ciss VDS=42.5 V, VGS=0, f=1MHz - 6234 - pF Output Capacitance Coss - 1181 - Reverse Transfer Capacitance Crss - 97 - Total Gate Charge Qg VDD=42.5V, ID=50A, VGS=10V - 124 - nC Gate-Source Charge Qgs - 31.2 - Gate-Drain Charge Qgd - 39.2 - Gate Resistance RG VGS=0, VDS=0 - 1.75 - Ω Switching Characteristics Turn-on Delay Time td(on) VDD=42.5V, ID=10A, VGS=10V,RG=5Ω, Resistive Load - 41 - ns Rise Time tr - 68 - Turn-Off Delay Time td(off) - 76 - Fall Time tf - 44 - Source-Drain Diode Characteristics Continuous Source Current IS - - 200 A Maximum Source Current ISM - - 800 A Diode Forward Voltage VSD VGS=0V, IS=50A - - 1.2 V Reverse Recovery Time Trr IS=30A, VGS=0, di/dt=100A/us - 80 - ns Reverse Recovery Charge Qrr - 112 - nC
AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS Fig 1. Safe Operating Area Fig 2. Maximum Power Dissipation vs. Case Temperature Fig 3. Maximum Continuous Drain Current vs. Case Temperature Fig 4. Typical Output Characteristics Fig 5. Transient Thermal Impedance
AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 5 - Fig 6. Typical Transfer Characteristics Fig 7. Source-Drain Diode Forward Characteristics Fig 8. Drain-Source On-Resistance vs. Drain Current Fig 9. Normalized On-Resistance vs. Junction Temperature Fig 10. Normalized Threshold Voltage vs. Junction Temperature Fig 11. Normalized Breakdown Voltage vs. Junction Temperature
AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 6 - Fig 12. Capacitance Characteristics Fig 13. Typical Gate Charge vs. Gate-Source Voltage Fig 14. Resistive Switching Test Circuit Fig 15. Resistive Switching Waveforms Fig 16. Gate Charge Test Circuit Fig 17. Gate Charge Waveforms
AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 7 - Fig 18. Diode Reverse Recovery Test Circuit Fig 19. Diode Reverse Recovery Waveform Fig 20. Unclamped Inductive Switching Test Circuit Fig 21. Unclamped Inductive Switching Waveform
AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in TOLL-8 (Unit: mm) Symbol Values Min. Max. A 2.200 2.400 b 0.700 0.900 b1 9.700 9.900 c 0.400 0.600 D 10.280 10.580 D1 3.150 3.450 E 9.700 10.100 E1 7.350 7.650 E2 8.350 8.650 E3 9.310 9.610 e 1.100 1.300 H 11.480 11.880 H1 6.550 6.750 H2 7.200 7.500 H3 3.440 3.740 H4 3.110 3.410 K 4.030 4.330 L 1.600 2.100 L1 0.550 0.850 L2 0.450 0.750 L3 1.000 1.300
AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N -CHANNEL ENHANCED POWER MOSFET REV1.0 - JUN 2023 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.