AM0292 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 1 - DESCRIPTION FEATURES VDS= 100V VGS= ±20V ID(A)= 120A RDS(ON)= 4.8mΩ (max.) @ VGS=10V AM0292 is available in TO-220 package. 100% UIS + Rg Tested Reliable and Rugged Available in TO-220 package. ORDERING INFORMATION APPLICATION Package Type Part Number TO-220 SPQ: 50pcs/Tube AM0292T3U AM0292T3VU Note V: Halogen free Package U: Tube AiT provides all RoHS products High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circuits. N CHANNEL MOSFET N-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 D Drain
3 S Source
AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 100V VGSS, Gate-Source Voltage ±20V TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~+150℃ IS, Diode Continuous Forward Current TC=25°C 70A ID, Continuous Drain Current TC=25°C 120ANOTE1 TC=100°C 86A IDMNOTE2, Pulsed Drain Current TC=25°C 400A PD, Maximum Power Dissipation TC=25°C 192W TC=100°C 76W RθJC, Thermal Resistance-Junction to Case 0.65℃/W ID, Continuous Drain Current TA=25°C 14.0A TA=70°C 11.2A PD, Maximum Power Dissipation TA=25°C 2.0W TA=70°C 1.28W RθJA, Thermal Resistance-Junction to Ambient 62.5℃/W IASNOTE3,Avalanche Current, Single pulse L=0.5mH 42A EASNOTE3, Avalanche Energy, Single pulse L=0.5mH 441mJ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation current is 120A NOTE2: Pulse width limited by maximum junction temperature. NOTE3: UIS tested and pulse width limited by maximum junction temperature 150℃ (initial temperature TJ=25℃).
AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250μA 100 - - V Zero Gate Voltage Drain Current IDSS VDS=80V,VGS=0V - - 1 μA TJ =85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=250μA 2 3 4 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE4 VGS=10V,IDS=40A - 4.0 4.8 mΩ Diode Characteristics Diode Forward Voltage VSD NOTE4 ISD=40A, VGS=0V - 0.8 1.3 V Reverse Recovery Time trr ISD=40A, dlSD/dt=100A/μs - 65 - ns Reverse Recovery Charge Qrr - 135 - nC Dynamic CharacteristicsNOTE5 Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz - 20 - Ω Input Capacitance Ciss VGS=0V, VDS=30V, Frequency=1.0MHz - 4450 5790 pF Output Capacitance Coss - 1420 - Reverse Transfer Capacitance Crss - 50 - Turn-on Delay Time td(on) VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω - 20 36 ns Turn-on Rise Time tr - 16 29 Turn-off Delay Time td(off) - 74 134 Turn-off Fall Time tf - 118 213 Gate Charge CharacteristicsNOTE5 Total Gate Charge Qg VDS=50V, VGS=10V, IDS=40A - 77 108 nC Gate-Source Charge Qgs - 20 - Gate-Drain Charge Qgd - 18 - NOTE4: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE5: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 7 - 13. Transfer Characteristics Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in TO-220 (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 3.56 4.83 0.140 0.190 A1 0.51 1.40 0.020 0.055 A2 2.03 2.92 0.080 0.115 b 0.38 1.02 0.015 0.040 b2 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.22 16.51 0.560 0.650 D1 8.38 9.30 0.330 0.366 D2 12.19 13.65 0.480 0.537 E 9.65 10.67 0.380 0.420 E1 6.86 8.89 0.270 0.350 e 2.54 BSC 0.100 BSC H1 5.84 6.86 0.230 0.270 L 12.70 14.73 0.500 0.580 L1 - 6.35 - 0.250 P 3.53 4.09 0.139 0.161 Q 2.54 3.43 0.100 0.135
AiT Semiconductor Inc. www.ait-ic.com AM0292 MOSFET 100V N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2019 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server e property, or environmental damage. In order to minimize risks associated with the customer's applications, th e customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the tim e of sale.