ALD1106 ADL | Alldatasheet

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Technical content

QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY ALD1106/ALD1116 GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- ment mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ ALD1116 are building blocks for differential amplifier input stages, transmission gates, multiplexer applications, current sources and many precision analog circuits.

APPLICATIONS

  • Precision current mirrors
  • Precision current sources
  • Voltage choppers
  • Differential amplifier input stage
  • Voltage comparator
  • Data converters
  • Sample and Hold
  • Analog signal processing

FEATURES

  • Low threshold voltage of 0.7V
  • Low input capacitance
  • Low Vos -- 2mV typical
  • High input impedance -- 10 14Ω typical
  • Negative current (I DS) temperature coefficient
  • Enhancement-mode (normally off)
  • DC current gain 10 9
  • Low input and output leakage currents
  • RoHS compliant ADVANCED LINEAR DEVICES, INC. Operating Temperature Range* 0°C to +70°C 0 °C to +70°C 8-Pin SOIC 8-Pin Plastic Dip Package Package ALD1116SAL ALD1116PAL 14-Pin SOIC 14-Pin Plastic Dip Package Package ALD1106SBL ALD1106PBL ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) BLOCK DIAGRAMS * Contact factory for high temperature versions. PIN CONFIGURATION TOP VIEW SBL, PBL PACKAGES TOP VIEW SAL, PAL PACKAGES DN2 GN2 SN2 GN1 SN1 4 5 8DN1 V+V- ALD1116 DN2 GN2 SN2 GN3 SN3 GN1 SN1 DN4 GN4 7 8 14DN1 V+V- DN3 SN4 ALD1106 DN1 (1) DN2 (14) GN1 (2) GN2 (13) DN3 (10) DN4 (5) GN3 (9) SN3 (8) SN4 (7) V+ (11) V- (4) GN4 (6) ALD1106 DN1 (1) DN2 (8) GN1 (2) GN2 (7) V+ (5) ALD1116

ALD1106/ALD1116 Advanced Linear Devices 2 of 9 OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified Drain-source voltage, VDS 10V Gate-source voltage, VGS 10V Power dissipation 500mW Operating temperature range SAL, PAL, SBL, PBL packages 0 °C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ABSOLUTE MAXIMUM RATINGS Voltage Offset Voltage V OS 2 10 2 10 mV I DS = 10µA VGS = VDS VGS1-VGS2 Gate Threshold Temperature TC VT -1.2 -1.2 mV/ °C Drift2 On Drain IDS(ON) 3.0 4.8 3.0 4.8 mA V GS = VDS = 5V Current Transconductance GIS 1.0 1.8 1.0 1.8 mmho V DS = 5V IDS = 10mA Mismatch ∆Gfs 0.5 0.5 % Output G OS 200 200 µmho V DS = 5V IDS = 10mA Conductance Drain Source RDS(ON) 350 500 350 500 Ω VDS = 0.1V VGS = 5V On Resistance Drain Source On Resistence ∆DS(ON) 0.5 0.5 % V DS = 0.1V VGS = 5V Mismatch Drain Source Breakdown BV DSS 10 10 V I DS = 1.0µA VGS = 0V Voltage Off Drain I DS(OFF) 10 400 10 400 pA V DS = 10V VGS = 0V Current1 44 n A T A = 125°C Gate Leakage I GSS 1 100 1 100 pA V DS = 0V VGS = 10V Current 1 1 nA T A = 125°C Input C ISS 13 1 3 p F Capacitance 2 ALD1106 ALD1116 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions Notes: 1 Consists of junction leakage currents

2 Sample tested parameters

ALD1106/ALD1116 Advanced Linear Devices 3 of 9 TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (mA) 0 2 6 81 04 VBS = 0V TA = +25°C VGS = 10V LOW VOLTAGE OUTPUT CHARACTERISTICS 1000 DRAIN SOURCE ON CURRENT IDS(ON) (µA) DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV) -160 -80 0 +160+80 -500 -1000 500 VBS = 0V TA = 25°C VGS = 10V FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (mmho) DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) 0 2 4 6 108 0.5 0.2 VBS = 0V f = 1KHz TA = +125°C TA = +25°C IDS = 10mA IDS = 1mA TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS GATE SOURCE ON VOLTAGE - VGS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) VGS = VDS TA = +25°C -6V -4V -2V VBS = 0V -8V -10V DRAIN SOURCE ON RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE RDS(ON) (KΩ) GATE SOURCE ON VOLTAGE - VGS(ON) (V) 0 2 4 6 108 100 0.1 VDS = 0.2V VBS = 0V TA = +125°C TA = +25°C DRAIN SOURCE OFF CURRENT vs. AMBIENT TEMPERATURE DRAIN SOURCE OFF CURRENT RDS(OFF) (pA) 1000 -50 -25 0 +25 +50 +125 +100+75 AMBIENT TEMPERATURE - TA (°C) 100 VDS = 10V VGS = VBS = 0V

ALD1106/ALD1116 Advanced Linear Devices 4 of 9 CURRENT SOURCE MULTIPLICATION CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL TYPICAL APPLICATIONS DIFFERENTIAL AMPLIFIER V+ = +5V ISOURCERSET ISET ON OFF Digital Logic Control of Current Source Q1 : N-Channel MOSFET Q3, Q4: P-Channel MOSFET ALD1102, 1/2 ALD1107, or ALD1117 1/2 ALD1101, 1/4 ALD1106, or 1/2 ALD1116 ISET RSET V+ = +5V ISOURCE Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET Q1 Q2 V+ = +5V ALD1101, 1/2 ALD1106, or ALD1116 ALD1102, 1/2 ALD1107, or ALD1117 I SOURCE = ISET RSET=~ V+ - Vt RSET QSET, Q1..QN: ALD1101, ALD1106, or ALD1116 N-Channel MOSFET ISET V+ = +5V ISOURCE RSET Q2 Q3QSET Q1 QN ISOURCE = ISET x N PMOS PAIR VIN- NMOS PAIR Q2Q1VIN+ Current Source Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET VOUT ALD1101, 1/2 ALD1106, or ALD1116 ALD1102, 1/2 ALD1107, or ALD1117

ALD1106/ALD1116 Advanced Linear Devices 5 of 9 CASCODE CURRENT SOURCES BASIC CURRENT SOURCES P-CHANNEL CURRENT SOURCEN-CHANNEL CURRENT SOURCE TYPICAL APPLICATIONS (cont.) V+ = +5V 23 5 ISOURCE RSETISET Q3, Q4: P-Channel MOSFET ALD1102, 1/2 ALD1107, or ALD1117 ISET V+ = +5V ISOURCE RSET Q1, Q2, Q3, Q4: N-Channel MOSFET (ALD1101 or ALD1103) 2 x ALD1101 or ALD1106 Q1, Q2, Q3, Q4: P-Channel MOSFET (ALD1102 or ALD1103) ISET V+ = +5V ISOURCERSET 2 x ALD1102 or ALD1107 ISOURCE = ISET RSET=~V+ - 2Vt RSET ISOURCE V+ = +5V RSETISET 68Q2 ALD1101, 1/2 ALD1106, or ALD1116 I SOURCE = ISET RSET=~ V+ - 1.0 RSET=~ V+ - Vt RSET Q1, Q2: N-Channel MOSFET

ALD1106/ALD1116 Advanced Linear Devices 6 of 9

8 Pin Plastic SOIC Package

A b C D-8 E e H L S 1.75 0.25 0.45 0.25 5.00 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.185 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.196 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 4.69 3.50 5.70 0.60 0.25 ø L CH S (45°) ø e A b D S (45°) E

ALD1106/ALD1116 Advanced Linear Devices 7 of 9

8 Pin Plastic DIP Package

S b E E1 D e A L c e1 ø Millimeters Inches Min Max Min MaxDim A b c D-8 E e L S-8 ø 3.81 0.38 1.27 0.89 0.38 0.20 9.40 5.59 7.62 2.29 7.37 2.79 1.02 5.08 1.27 2.03 1.65 0.51 0.30 11.68 7.11 8.26 2.79 7.87 3.81 2.03 15° 0.105 0.015 0.050 0.035 0.015 0.008 0.370 0.220 0.300 0.090 0.290 0.110 0.040 0.200 0.050 0.080 0.065 0.020 0.012 0.460 0.280 0.325 0.110 0.310 0.150 0.080 15°

ALD1106/ALD1116 Advanced Linear Devices 8 of 9 Millimeters Inches Min Max Min MaxDim A b C D-14 E e H L S 1.75 0.25 0.45 0.25 8.75 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.336 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.345 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 8.55 3.50 5.70 0.60 0.25 ø

14 Pin Plastic SOIC Package

E D e A b S (45°) L CH S (45°) ø

ALD1106/ALD1116 Advanced Linear Devices 9 of 9

14 Pin Plastic DIP Package

D S b e A L E E1 c e1 ø Millimeters Inches Min Max Min MaxDim A b c D-14 E e L S-14 ø 3.81 0.38 1.27 0.89 0.38 0.20 17.27 5.59 7.62 2.29 7.37 2.79 1.02 5.08 1.27 2.03 1.65 0.51 0.30 19.30 7.11 8.26 2.79 7.87 3.81 2.03 15° 0.105 0.015 0.050 0.035 0.015 0.008 0.680 0.220 0.300 0.090 0.290 0.110 0.040 0.200 0.050 0.080 0.065 0.020 0.012 0.760 0.280 0.325 0.110 0.310 0.150 0.080 15°