ALD1105 ADL | Alldatasheet

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Technical content

DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR

FEATURES

  • Thermal tracking between N-channel and P-channel pairs
  • Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETS
  • Low input capacitance
  • Low Vos -- 10mV
  • High input impedance -- 10 13Ω typical
  • Low input and output leakage currents
  • Negative current (I DS) temperature coefficient
  • Enhancement mode (normally off)
  • DC current gain 10 9
  • Matched N-channel and matched P-channel in one package
  • RoHS compliant PIN CONFIGURATION

APPLICATIONS

  • Precision current mirrors
  • Complementary push-pull linear drives
  • Analog switches
  • Choppers
  • Differential amplifier input stage
  • Voltage comparator
  • Data converters
  • Sample and Hold
  • Analog inverter
  • Precision matched current sources DN2 GN2 SN2 GP2 SP2 GN1 SN1 DP1 GP1 7 8 14DN1 V+V- DP2 SP1 BLOCK DIAGRAM N SOURCE 1 (3) SUBSTRATE (4) N SOURCE 2 (12) N GATE 2 (13) N DRAIN 1 (1) N GATE 1 (2) N DRAIN 2 (14) P SOURCE 1 (7) SUBSTRATE (11) P SOURCE 2 (8) P GATE 2 (9) P DRAIN 1 (5) P GATE 1 (6) P DRAIN 2 (10) TOP VIEW SBL, PBL PACKAGES * Contact factory for high temperature versions. ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) Operating Temperature Range* 0°C to +70°C0 °C to +70°C 14-Pin 14-Pin SOIC Plastic Dip Package Package ALD1105SBL ALD1105PBL ADVANCED LINEAR DEVICES, INC. GENERAL DESCRIPTION The ALD1105 is a monolithic dual N-channel and dual P-channel comple- mentary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair and an ALD1117 P-channel MOSFET pair in one package. The ALD1105 is a low drain current, low leakage current version of the ALD1103. The ALD1105 offers high input impedance and negative current tempera- ture coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signal switching and amplifying applications in +2V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used in pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1105 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1105 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 100pA at room temperature. For example, DC beta of the device at a drain current of 3mA at 25°C is = 3mA/100pA = 300,000,000.

ALD1105 Advanced Linear Devices 2 of 8 Drain-source voltage, VDS 10V Gate-source voltage, VGS 10V Power dissipation 500mW Operating temperature range SBL, PBL packages 0 °C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ABSOLUTE MAXIMUM RATINGS Voltage Offset Voltage V OS 21 0 m V I DS = 10µA VGS = VDS 21 0 m V I DS = -10µA VGS = VDS VGS1 - VGS2 Gate Threshold Temperature TC VT -1.2 mV/ °C -1.3 mV/ °C Drift On Drain I DS(ON) 3 4.8 mA V GS = VDS = 5V -1.3 -2 mA V GS = VDS = -5V Current Trans-. G fs 1 1.8 mmho V DS = 5V IDS = 10mA 0.25 0.67 mmho V DS = -5V IDS = -10mA conductance Mismatch ∆Gfs 0.5 % 0.5 % Output G OS 200 µmho V DS = 5V IDS = 10mA 40 µmho V DS = -5V IDS = -10mA Conductance Drain Source R DS(ON) 350 500 Ω VDS = 0.1V VGS = 5V 1200 1800 Ω VDS = -0.1V VGS = -5V ON Resistance Drain Source ON Resistance ∆RDS(ON) 0.5 % V DS = 0.1V VGS = 5V 0.5 % V DS = -0.1V VGS = -5V Mismatch Drain Source Breakdown BV DSS 10 V I DS = 1µA VGS = 0V -10 V I DS = -1µA VGS = 0V Voltage Off Drain I DS(OFF) 10 400 pA V DS = 10V IGS = 0V 10 400 pA V DS = -10V VGS = 0V Current 4 nA T A = 125°C4 n A T A = 125°C Gate Leakage I GSS 1 100 pA V DS = 0V VGS = 10V 1 100 pA V DS = 0V VGS = -10V Current 10 nA T A = 125°C1 0 n A T A = 125°C Input C ISS 1 3 pF 1 3 pF Capacitance N - Channel Test P - Channel Test Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified

ALD1105 Advanced Linear Devices 3 of 8 TYPICAL N-CHANNEL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (mA) 0 2 6 81 04 VBS = 0V TA = +25°C VGS = 10V FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (mmho) DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) 0 2 4 6 108 0.5 0.2 VBS = 0V f = 1KHz TA = +125°C TA = +25°C IDS = 10mA IDS = 1mA DRAIN SOURCE ON RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE RDS(ON) (KΩ) GATE SOURCE ON VOLTAGE - VGS(ON) (V) 0 2 4 6 108 100 0.1 VDS = 0.2V VBS = 0V TA = +125°C TA = +25°C DRAIN SOURCE OFF CURRENT vs. AMBIENT TEMPERATURE DRAIN SOURCE OFF CURRENT RDS(OFF) (pA) -50 -25 0 +25 +50 +125 +100+75 AMBIENT TEMPERATURE - TA (°C) 1000 100 VDS = 10V VGS = VBS = 0V LOW VOLTAGE OUTPUT CHARACTERISTICS 1000 DRAIN-SOURCE ON CURRENT IDS(ON) (µA) DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV) -160 -80 0 +160+80 -500 -1000 500 VBS = 0V TA = 25°C VGS = 10V TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS GATE SOURCE ON VOLTAGE - VGS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) VGS = VDS TA = +25°C -6V -4V -2V VBS = 0V -8V -10V

ALD1105 Advanced Linear Devices 4 of 8 TYPICAL P-CHANNEL PERFORMANCE CHARACTERISTICS TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS GATE SOURCE ON VOLTAGE - VGS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) -15 -20 -10 VGS = VDS TA = +25°C 10V VBS = 0V OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (mA) 0 -2 -6 -8 -10-4 -7.5 -2.5 -10 -5.0 VBS = 0V TA = +25°C -8V -6V -4V -2V VGS = -10V LOW VOLTAGE OUTPUT CHARACTERISTICS 500 DRAIN SOURCE ON CURRENT IDS(ON) (µA) DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV) -320 -160 0 +320+160 -250 -500 250 VBS = 0V TA = 25°C VGS = -10V -4V -2V -8V -6V FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (mmho) DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) 0 -2 -4 -6 -10-8 1.0 0.5 0.2 0.1 0.05 0.02 0.01 VBS = 0V f = 1KHz TA = +125°C TA = +25°C IDS = -5mA IDS = -1mA DRAIN SOURCE ON RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE RDS(ON) (KΩ) GATE SOURCE ON VOLTAGE - VGS(ON) (V) 0 -2 -4 -6 -10-8 100 0.1 VDS = 0.4V VBS = 0V TA = +125°C TA = +25°C DRAIN SOURCE OFF CURRENT vs. AMBIENT TEMPERATURE DRAIN SOURCE OFF CURRENT RDS(OFF) (pA) -50 -25 0 +25 +50 +125 +100+75 AMBIENT TEMPERATURE - TA (°C) 1000 100 VDS = -10V VGS = VBS = 0V

ALD1105 Advanced Linear Devices 5 of 8 CURRENT SOURCE MULTIPLICATION CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL TYPICAL APPLICATIONS DIFFERENTIAL AMPLIFIER ISET RSET V+ = +5V ISOURCE Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET Q1 Q2 V+ = +5V ALD1105 ISOURCE = ISET RSET=~ V+ - Vt RSET V+ = +5V ISOURCERSET ISET ON OFF Digital Logic Control of Current Source Q1 : N-Channel MOSFET Q3, Q4: P-Channel MOSFET 1/2 ALD1105 1/4 ALD1105 PMOS PAIR VIN- NMOS PAIR Q2Q1VIN+ Current Source Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET VOUT ALD1105 QSET, Q1..QN: ALD1106 or ALD1105 N-Channel MOSFET ISET V+ = +5V ISOURCE RSET Q2 Q3QSET Q1 QN ISOURCE = ISET x N

ALD1105 Advanced Linear Devices 6 of 8 CASCODE CURRENT SOURCES BASIC CURRENT SOURCES P-CHANNEL CURRENT SOURCEN-CHANNEL CURRENT SOURCE TYPICAL APPLICATIONS (cont.) ISOURCE V+ = +5V RSETISET Q1Q2 ISOURCE = ISET RSET=~ V+ - 1.0 RSET=~ V+ - Vt RSET Q1, Q2: N-Channel MOSFET 1/2 ALD1105 V+ = +5V ISOURCE RSETISET Q3, Q4: P-Channel MOSFET 1/2 ALD1105 ISET V+ = +5V ISOURCE RSET Q1, Q2, Q3, Q4: N-Channel MOSFET (1/2 ALD1105 or ALD1116) Q1, Q2, Q3, Q4: P-Channel MOSFET (1/2 ALD1105 or ALD1117) ISET V+ = +5V ISOURCERSET ISOURCE = ISET RSET=~V+ - 2Vt RSET

ALD1105 Advanced Linear Devices 7 of 8 Millimeters Inches Min Max Min MaxDim A b C D-14 E e H L S 1.75 0.25 0.45 0.25 8.75 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.336 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.345 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 8.55 3.50 5.70 0.60 0.25 ø

14 Pin Plastic SOIC Package

E D e A b S (45°) L CH S (45°) ø

ALD1105 Advanced Linear Devices 8 of 8

14 Pin Plastic DIP Package

D S b e A L E E1 c e1 ø Millimeters Inches Min Max Min MaxDim A b c D-14 E e L S-14 ø 3.81 0.38 1.27 0.89 0.38 0.20 17.27 5.59 7.62 2.29 7.37 2.79 1.02 5.08 1.27 2.03 1.65 0.51 0.30 19.30 7.11 8.26 2.79 7.87 3.81 2.03 15° 0.105 0.015 0.050 0.035 0.015 0.008 0.680 0.220 0.300 0.090 0.290 0.110 0.040 0.200 0.050 0.080 0.065 0.020 0.012 0.760 0.280 0.325 0.110 0.310 0.150 0.080 15°