ALD1103 ADL | Alldatasheet

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Technical content

DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR

FEATURES

  • Thermal tracking between N-channel and P-channel pairs
  • Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETS
  • Low input capacitance
  • Low Vos -- 10mV
  • High input impedance -- 10 13Ω typical
  • Low input and output leakage currents
  • Negative current (I DS) temperature coefficient
  • Enhancement mode (normally off)
  • DC current gain 10 9
  • Matched N-channel and matched P-channel in one package
  • RoHS compliant PIN CONFIGURATION

APPLICATIONS

  • Precision current mirrors
  • Complementary push-pull linear drives
  • Analog switches
  • Choppers
  • Differential amplifier input stage
  • Voltage comparator
  • Data converters
  • Sample and Hold
  • Analog inverter
  • Precision matched current sources DN2 GN2 SN2 GP2 SP2 GN1 SN1 DP1 GP1 7 8 14DN1 V+V- DP2 SP1 BLOCK DIAGRAM N SOURCE 1 (3) SUBSTRATE (4) N SOURCE 2 (12) N GATE 2 (13) N DRAIN 1 (1) N GATE 1 (2) N DRAIN 2 (14) P SOURCE 1 (7) SUBSTRATE (11) P SOURCE 2 (8) P GATE 2 (9) P DRAIN 1 (5) P GATE 1 (6) P DRAIN 2 (10) TOP VIEW SBL, PBL PACKAGES * Contact factory for high temperature versions. ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) Operating Temperature Range* 0°C to +70°C0 °C to +70°C 14-Pin 14-Pin SOIC Plastic Dip Package Package ALD1103SBL ALD1103PBL ADVANCED LINEAR DEVICES, INC. GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-channel MOSFET pair and an ALD1102 P- channel MOSFET pair in one package. The ALD1103 offers high input impedance and negative current tempera- ture coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signal switching and amplifying applications in +2V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used in pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1103 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1103 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

ALD1103 Advanced Linear Devices 2 of 8 Drain-source voltage, VDS 10V Gate-source voltage, VGS 10V Power dissipation 500mW Operating temperature range SBL, PBL packages 0 °C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ABSOLUTE MAXIMUM RATINGS Voltage Offset Voltage V OS 10 mV I DS = 100µA VGS = VDS 10 mV I DS = -100µA VGS = VDS VGS1 - VGS2 Gate Threshold Temperature TC VT -1.2 mV/ °C -1.3 mV/ °C Drift On Drain I DS(ON) 25 40 mA V GS = VDS = 5V -8 -16 mA V GS = VDS = -5V Current Trans-. G fs 5 10 mmho V DS = 5V IDS = 10mA 2 4 mmho V DS = -5V IDS = -10mA conductance Mismatch ∆Gfs 0.5 % 0.5 % Output G OS 200 µmho V DS = 5V IDS = 10mA 500 µmho V DS = -5V IDS = -10mA Conductance Drain Source R DS(ON) 50 75 Ω VDS = 0.1V VGS = 5V 180 270 Ω VDS = -0.1V VGS = -5V ON Resistance Drain Source ON Resistance ∆RDS(ON) 0.5 % V DS = 0.1V VGS = 5V 0.5 % V DS = -0.1V VGS = -5V Mismatch Drain Source Breakdown BV DSS 10 V I DS = 10µA VGS = 0V -10 V I DS = -10µA VGS = 0V Voltage Off Drain I DS(OFF) 0.1 4 nA V DS = 10V IGS = 0V 0.1 4 nA V DS = -10V VGS = 0V Current 4 µAT A = 125°C4 µAT A = 125°C Gate Leakage I GSS 1 100 pA V DS = 0V VGS = 10V 1 100 pA V DS = 0V VGS = -10V Current 10 nA T A = 125°C1 0 n A T A = 125°C Input C ISS 61 0 p F 6 1 0 p F Capacitance N - Channel Test P - Channel Test Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified

ALD1103 Advanced Linear Devices 3 of 8 TYPICAL N-CHANNEL PERFORMANCE CHARACTERISTICS TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS GATE SOURCE ON VOLTAGE - VGS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) VGS = VDS TA = +25°C -6V -4V -2V VBS = 0V -8V -10V DRAIN SOURCE ON RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE RDS(ON) (Ω) GATE SOURCE ON VOLTAGE - VGS(ON) (V) 0 2 4 6 108 10000 1000 100 VDS = 0.2V VBS = 0V TA = +125°C TA = +25°C DRAIN SOURCE OFF CURRENT vs. AMBIENT TEMPERATURE DRAIN SOURCE OFF CURRENT RDS(OFF) (A) 10x10-6 10x10-9 10x10-12 -50 -25 0 +25 +50 +125 +100+75 AMBIENT TEMPERATURE - TA (°C) VDS = 10V VGS = VBS = 0V OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (mA) 0 2 6 81 04 120 160 VBS = 0V TA = +25°C VGS = 10V FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (µmho) DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) 0 2 4 6 108 1 x 105 5 x 104 2 x 104 1 x 104 5 x 103 2 x 103 1 x 103 VBS = 0V f = 1KHz TA = +125°C TA = +25°C IDS = 10mA IDS = 1mA LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE ON CURRENT IDS(ON) (mA) DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV) -160 -80 0 +160+80 VBS = 0V TA = 25°C VGS = 10V

ALD1103 Advanced Linear Devices 4 of 8 TYPICAL P-CHANNEL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (mA) 0 -2 -6 -8 -10-4 -60 -20 -80 -40 VBS = 0V TA = +25°C -8V -6V -4V -2V VGS = -10V LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN-SOURCE CURRENT IDS(ON) (mA) DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV) -320 -160 0 +320+160 VBS = 0V TA = 25°C VGS = -10V -4V -2V -8V -6V FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (µmho) DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) 0 -2 -4 -6 -10-8 10000 5000 2000 1000 500 200 100 VBS = 0V f = 1KHz TA = +125°C TA = +25°C IDS = -5mA IDS = -1mA DRAIN SOURCE ON RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE RDS(ON) (Ω) GATE SOURCE ON VOLTAGE - VGS(ON) (V) 0 -2 -4 -6 -10-8 10000 1000 100 VDS = 0.4V VBS = 0V TA = +125°C TA = +25°C DRAIN SOURCE OFF CURRENT vs. AMBIENT TEMPERATURE DRAIN SOURCE OFF CURRENT RDS(OFF) (A) 10x10-6 10x10-9 10x10-12 -50 -25 0 +25 +50 +125 +100+75 AMBIENT TEMPERATURE - TA (°C) VDS = -10V VGS = VBS = 0V TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS GATE SOURCE ON VOLTAGE - VGS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) -15 -20 -10 VGS = VDS TA = +25°C 10V VBS = 0V

ALD1103 Advanced Linear Devices 5 of 8 CURRENT SOURCE MULTIPLICATION CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL TYPICAL APPLICATIONS DIFFERENTIAL AMPLIFIER ISET RSET V+ = +5V ISOURCE Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET Q1 Q2 V+ = +5V ALD1103 ISOURCE = ISET RSET=~ V+ - Vt RSET V+ = +5V ISOURCERSET ISET ON OFF Digital Logic Control of Current Source Q1 : N-Channel MOSFET Q3, Q4: P-Channel MOSFET 1/2 ALD1103 1/4 ALD1103 PMOS PAIR VIN- NMOS PAIR Q2Q1VIN+ Current Source Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET VOUT ALD1103 QSET, Q1..QN: ALD1101 or ALD1103 N-Channel MOSFET ISET V+ = +5V ISOURCE RSET Q2 Q3QSET Q1 QN ISOURCE = ISET x N

ALD1103 Advanced Linear Devices 6 of 8 CASCODE CURRENT SOURCES BASIC CURRENT SOURCES P-CHANNEL CURRENT SOURCEN-CHANNEL CURRENT SOURCE TYPICAL APPLICATIONS (cont.) Q1, Q2, Q3, Q4: P-Channel MOSFET (ALD1102 or ALD1103) ISET V+ = +5V ISOURCERSET ISOURCE = ISET RSET=~V+ - 2Vt RSET ISET V+ = +5V ISOURCE RSET Q1, Q2, Q3, Q4: N-Channel MOSFET (ALD1101 or ALD1103) ISOURCE V+ = +5V RSETISET 3, 4 138Q2 ISOURCE = ISET RSET=~ V+ - 1.0 RSET=~ V+ - Vt RSET Q1, Q2: N-Channel MOSFET 1/2 ALD1103 V+ = +5V 910 5 711 ISOURCE RSETISET Q3, Q4: P-Channel MOSFET 1/2 ALD1103

ALD1103 Advanced Linear Devices 7 of 8 Millimeters Inches Min Max Min MaxDim A b C D-14 E e H L S 1.75 0.25 0.45 0.25 8.75 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.336 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.345 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 8.55 3.50 5.70 0.60 0.25 ø

14 Pin Plastic SOIC Package

E D e A b S (45°) L CH S (45°) ø

ALD1103 Advanced Linear Devices 8 of 8

14 Pin Plastic DIP Package

D S b e A L E E1 c e1 ø Millimeters Inches Min Max Min MaxDim A b c D-14 E e L S-14 ø 3.81 0.38 1.27 0.89 0.38 0.20 17.27 5.59 7.62 2.29 7.37 2.79 1.02 5.08 1.27 2.03 1.65 0.51 0.30 19.30 7.11 8.26 2.79 7.87 3.81 2.03 15° 0.105 0.015 0.050 0.035 0.015 0.008 0.680 0.220 0.300 0.090 0.290 0.110 0.040 0.200 0.050 0.080 0.065 0.020 0.012 0.760 0.280 0.325 0.110 0.310 0.150 0.080 15°