ALD1101A ADL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

DUAL N-CHANNEL MATCHED MOSFET PAIR ALD1101A/ALD1101B ALD1101 GENERAL DESCRIPTION The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancement- mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. The ALD1101 offers high input impedance and negative current tempera- ture coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for switching and amplifying applications in +2V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used with an ALD1102, a dual CMOS analog switch can be constructed. In addition, the ALD1101 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1101 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

APPLICATIONS

  • Precision current mirrors
  • Precision current sources
  • Analog switches
  • Choppers
  • Differential amplifier input stage
  • Voltage comparator
  • Data converters
  • Sample and Hold
  • Analog inverter

FEATURES

  • Low threshold voltage of 0.7V
  • Low input capacitance
  • Low Vos grades -- 2mV, 5mV, 10mV
  • High input impedance -- 10 12Ω typical
  • Negative current (I DS) temperature coefficient
  • Enhancement-mode (normally off)
  • DC current gain 10 9
  • RoHS compliant BLOCK DIAGRAM SOURCE 1 (1) SUBSTRATE (8) SOURCE 2 (7) GATE 2 (6) DRAIN 1 (3) GATE 1 (2) DRAIN 2 (5) PIN CONFIGURATION TOP VIEW SAL, PAL PACKAGES * IC pin is internally connected. Do not connect externally. SOURCE 1 GATE 1 DRAIN 1 IC SUBSTRATE SOURCE 2 GATE 2 DRAIN 2 ADVANCED LINEAR DEVICES, INC. * Contact factory for high temperature versions. ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) Operating Temperature Range* 0°C to +70°C0 °C to +70°C 8-Pin 8-Pin SOIC Plastic Dip Package Package ALD1101ASAL ALD1101APAL ALD1101BSAL ALD1101BPAL ALD1101SAL ALD1101PAL

ALD1101A/ALD1101B/ALD1101 Advanced Linear Devices 2 of 7 Gate Threshold Offset Voltage V OS 2 5 10 mV I DS = 100µA VGS = VDS VGS1 - VGS2 Gate Threshold TC VT -1.2 -1.2 -1.2 mV/ °C Temperature Drift On Drain Current I DS(ON) 25 40 25 40 25 40 mA V GS = VDS = 5V Transconductance G fs 5 10 5 10 5 10 mmho V DS = 5V IDS = 10mA Mismatch ∆Gfs 0.5 0.5 0.5 % Output G OS 200 200 200 µmho V DS = 5V IDS = 10mA Conductance Drain Source R DS(ON) 50 75 50 75 50 75 Ω VDS = 0.1V VGS = 5V ON Resistance Drain Source ON Resistance ∆RDS(ON) 0.5 0.5 0.5 % V DS = 0.1V VGS = 5V Mismatch Drain Source Breakdown BV DSS 10 10 10 V I DS = 10µA VGS = 0V Voltage Off Drain Current I DS(OFF) 0.1 4 0.1 4 0.1 4 nA V DS = 10V VGS = 0V 444 µAT A = 125°C Gate Leakage I GSS 1 100 1 100 1 100 pA V DS = 0V VGS = 10V Current 10 10 10 nA T A = 125°C Input C ISS 61 0 6 1 0 6 1 0 p F Capacitance OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD1101A ALD1101B ALD1101 Test Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Conditions Drain-source voltage, VDS 10V Gate-source voltage, VGS 10V Power dissipation 500mW Operating temperature range SAL, PAL packages 0 °C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ABSOLUTE MAXIMUM RATINGS

ALD1101A/ALD1101B/ALD1101 Advanced Linear Devices 3 of 7 TYPICAL PERFORMANCE CHARACTERISTICS TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS GATE SOURCE ON VOLTAGE - VGS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) VGS = VDS TA = +25°C -6V -4V -2V VBS = 0V -8V -10V DRAIN SOURCE ON RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE RDS(ON) (Ω) GATE SOURCE ON VOLTAGE - VGS(ON) (V) 0 2 4 6 108 10000 1000 100 VDS = 0.2V VBS = 0V TA = +125°C TA = +25°C DRAIN SOURCE OFF CURRENT vs. AMBIENT TEMPERATURE DRAIN SOURCE OFF CURRENT RDS(OFF) (A) 10x10-6 10x10-9 10x10-12 -50 -25 0 +25 +50 +125 +100+75 AMBIENT TEMPERATURE - TA (°C) VDS = 10V VGS = VBS = 0V OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (mA) 0 2 6 81 04 120 160 VBS = 0V TA = +25°C VGS = 10V FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (µmho) DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) 0 2 4 6 108 1 x 105 5 x 104 2 x 104 1 x 104 5 x 103 2 x 103 1 x 103 VBS = 0V f = 1KHz TA = +125°C TA = +25°C IDS = 10mA IDS = 1mA LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE ON CURRENT IDS(ON) (mA) DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV) -160 -80 0 +160+80 VBS = 0V TA = 25°C VGS = 10V

ALD1101A/ALD1101B/ALD1101 Advanced Linear Devices 4 of 7 CURRENT SOURCE MULTIPLICATION CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL TYPICAL APPLICATIONS DIFFERENTIAL AMPLIFIER V+ = +5V ISOURCERSET ISET ON OFF Digital Logic Control of Current Source Q1 : N-Channel MOSFET Q3, Q4: P-Channel MOSFET ALD1102, 1/2 ALD1107, or ALD1117 1/2 ALD1101, 1/4 ALD1106, or 1/2 ALD1116 ISET RSET V+ = +5V ISOURCE Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET Q1 Q2 V+ = +5V ALD1101, 1/2 ALD1106, or ALD1116 ALD1102, 1/2 ALD1107, or ALD1117 I SOURCE = ISET RSET=~ V+ - Vt RSET PMOS PAIR VIN- NMOS PAIR Q2Q1VIN+ Current Source Q1, Q2: N-Channel MOSFET Q3, Q4: P-Channel MOSFET VOUT ALD1101, 1/2 ALD1106, or ALD1116 ALD1102, 1/2 ALD1107, or ALD1117 QSET, Q1..QN: ALD1101, ALD1106, or ALD1116 N-Channel MOSFET ISET V+ = +5V ISOURCE RSET Q2 Q3QSET Q1 QN ISOURCE = ISET x N

ALD1101A/ALD1101B/ALD1101 Advanced Linear Devices 5 of 7 CASCODE CURRENT SOURCES BASIC CURRENT SOURCES P-CHANNEL CURRENT SOURCEN-CHANNEL CURRENT SOURCE TYPICAL APPLICATIONS (cont.) V+ = +5V 23 5 ISOURCE RSETISET Q3, Q4: P-Channel MOSFET ALD1102, 1/2 ALD1107, or ALD1117 ISET V+ = +5V ISOURCE RSET Q1, Q2, Q3, Q4: N-Channel MOSFET (ALD1101 or ALD1103) 2 x ALD1101 or ALD1106 Q1, Q2, Q3, Q4: P-Channel MOSFET (ALD1102 or ALD1103) ISET V+ = +5V ISOURCERSET 2 x ALD1102 or ALD1107 ISOURCE = ISET RSET=~V+ - 2Vt RSET ISOURCE V+ = +5V RSETISET 68Q2 ALD1101, 1/2 ALD1106, or ALD1116 I SOURCE = ISET RSET=~ V+ - 1.0 RSET=~ V+ - Vt RSET Q1, Q2: N-Channel MOSFET

ALD1101A/ALD1101B/ALD1101 Advanced Linear Devices 6 of 7

8 Pin Plastic SOIC Package

A b C D-8 E e H L S 1.75 0.25 0.45 0.25 5.00 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.185 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.196 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 4.69 3.50 5.70 0.60 0.25 ø L CH S (45°) ø e A b D S (45°) E

ALD1101A/ALD1101B/ALD1101 Advanced Linear Devices 7 of 7

8 Pin Plastic DIP Package

S b E E1 D e A L c e1 ø Millimeters Inches Min Max Min MaxDim A b c D-8 E e L S-8 ø 3.81 0.38 1.27 0.89 0.38 0.20 9.40 5.59 7.62 2.29 7.37 2.79 1.02 5.08 1.27 2.03 1.65 0.51 0.30 11.68 7.11 8.26 2.79 7.87 3.81 2.03 15° 0.105 0.015 0.050 0.035 0.015 0.008 0.370 0.220 0.300 0.090 0.290 0.110 0.040 0.200 0.050 0.080 0.065 0.020 0.012 0.460 0.280 0.325 0.110 0.310 0.150 0.080 15°