AL5802

AL5802

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 13

Technical content

Features

• Reference voltage VRSET = 0.65V
• -40 to +125°C temperature range
• 0.8V to 30V open-collector output
• Negative temperature co-efficient automatically reduces the LED current at high temperatures
• Low thermal impedance SOT26 with copper lead-frame
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen- and Antimony-Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/.
• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Pin Assignments (Top View) SOT26

Applications

• Linear LED drivers
• LED signs
• Offline LED luminaries Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 6 5 4 1 2 3

Document number: DS35516 Rev. 10 - 2 2 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Typical Application Circuit Pin Descriptions Pin Number Name Function

1 OUT Open-collector LED driver output

2 BIAS Biases the open collector output transistor

3 EN Enable pin for PWM dimming. Provides access to the base of Q2 and collector of Q1

4 GND Ground reference point for setting LED current

5 FB Feedback pin. Should be connected to pin 6. 6 REXT Current sense pin. LED current sensing resistor should be connected from here to GND. Functional Block Diagram Fig. 1 Block Diagram

Document number: DS35516 Rev. 10 - 2 3 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Absolute Maximum Ratings These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended periods may reduce device reliability. Symbol Characteristics Values Unit VOUT Output voltage relative to GND 30 V VBIAS BIAS voltage relative to GND (Note 4) 30 V VFB LED voltage relative to GND 6 V VEN EN voltage relative to GND 6 V VREXT REXT voltage relative to GND 6 V IOUT Output current 150 mA TJ Operating junction temperature -40 to +150 °C TST Storage temperature -55 to +150 °C Note: 4. With pins 5 and 6 connected together. Package Thermal Data Characteristic Symbol Value Unit Power Dissipation (Note 5) @ TA = +25°C Power Dissipation (Note 6) @ TA = +25°C PD 0.37 0.87 W Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = +25°C Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = +25°C RθJA 335 143 °C/W Notes: 5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout. 6. Device mounted on 25mm x 25mm 2oz copper board. Recommended Operating Conditions Symbol Parameter Min Max Unit VBIAS Supply voltage range 4.5 30 V VOUT OUT voltage range 0.8 30 ILED LED pin current (Note 7) 10 120 mA TA Operating ambient temperature range -40 +125 °C Note: 7. Subject to ambient temperature, power dissipation and PCB.

Document number: DS35516 Rev. 10 - 2 4 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Electrical Characteristics – NPN Transistor – Q1 (@ TA = +25°C, unless otherwise specified.) Symbol Characteristic Test Condition Min Typ Max Unit V(BR)CEO Collector-Emitter Breakdown Voltage (Note 8) IC = 1.0mA, IB = 0 40 — — V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 — — V ICEX Collector Cutoff Current VCE = 30V, VEB(OFF) = 3.0V — — 50 nA IBL Base Cutoff Current VCE = 30V, VEB(OFF) = 3.0V — — 50 nA hFE DC Current Gain IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V 100 300 VCE(SAT) Collector-Emitter Saturation Voltage (Note 8) IC = 10mA, IB = 1.0mA — — 0.20 V VBE(SAT) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.65 — 0.85 V Electrical Characteristics – NPN Pre-biased Transistor – Q2 (@ TA = +25°C, unless otherwise specified.) Symbol Characteristic Test Condition Min Typ Max Unit V(BR)CBO Collector-Base Breakdown Voltage IC = 50μA, IE = 0 30 — — V V(BR)CEO Collector-Emitter Breakdown Voltage (Note 8) IC = 1mA, IB = 0 30 — — V V(BR)EBO Emitter-Base Breakdown Voltage IE = 50μA, IC = 0 5.0 — — V ICBO Collector Cut-Off Current VCB = 30V, IE = 0 — — 0.5 µA IEBO Emitter Cut-Off Current VEB = 4V, IC = 0 — — 0.5 µA VCE(SAT) Collector-Emitter Saturation Voltage (Note 8) IC = 10mA, IB = 1mA — — 0.3 V hFE DC Current Gain (Note 9) VCE = 5V, IC = 150mA 100 — — — R1 Input Resistance — 7 10 13 kΩ *Characteristics of transistor only. Note: 8. Short duration pulse test used to minimize self-heating effect.

Document number: DS35516 Rev. 10 - 2 5 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Thermal Characteristics Fig. 2 Derating Curve AMBIENT TEMPERAURE (°C) Fig. 3 Max Power vs. Area Fig. 4 Thermal Resistance vs. Area Min Cu 2oz FR4 25mm x 25mm 2oz FR4

Document number: DS35516 Rev. 10 - 2 6 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Typical Performance Characteristics Note: 10. VOUT in the “Output Current vs. VOUT” graphs limited by power dissipation in the device. Fig. 5 Output Current vs. VOUT Fig. 6 Output Current vs. REXT Fig. 7 Output Current vs. VOUT Fig. 8 Output Current vs. VOUT Fig. 9 Output Current vs. VOUT Fig. 10 Output Current vs. VBIAS

Document number: DS35516 Rev. 10 - 2 7 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Typical Performance Characteristics (continued) Fig. 13 Output Current vs. VBIAS Fig. 12 Output Current vs. VBIAS Fig. 11 Output Current vs. VBIAS

Document number: DS35516 Rev. 10 - 2 8 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802

Application Information

Fig. 14 Typical Application Circuit for Linear Mode Current Sink LED Driver Fig. 15 Application Circuit for Increasing LED Current The AL5802 is designed for driving low current LEDs with a typical LED current of 20mA to 100mA. It provides a cost effective way for driving low current LEDs compared to more complex switching regulator solutions. Furthermore, it reduces the PCB board area of the solution as there is no need for external components like inductors, capacitors, and switching diodes. Figure 14 shows a typical application circuit diagram for driving an LED or string of LEDs. The NPN transistor Q1 measures the LED current by sensing the voltage across the external resistor R EXT. Q1 uses its VBE as a reference to set the voltage across the REXT and to control the base current into Q2. Q2 operates in linear mode to regulate the LED current. The LED current is, ILED = VBE(Q1) / REXT From this, necessary LED currents by the external resistor REXT can be calculated from, R EXT = VBE(Q1) / ILED Two or more AL5802 devices can be connected in parallel to construct higher current LED strings, as shown in Figure 15. Consideration of the expected linear-mode power dissipation must be factored into the design with respect to the AL5802's thermal resistance. The maximum voltage across the device can be calculated by using the maximum supply voltage and the voltage across the LED string. V CE(Q2) = VCC – VLED – VBE(Q1) PD = VCE(Q2) * ILED + ( VCC – VBE(Q2) – VBE(Q1))2 / R1 As the output current of AL5802 increases, it is necessary to provide appropriate thermal relief to the device. The power dissipation supported by the device is dependent upon the PCB board material, the copper area, and the ambient temperature. The maximum dissipation the device can handle is given by, P D = ( TJ(MAX) - TA) /RθJA Refer to the thermal characteristic graphs on page 5 for selecting the appropriate PCB copper area.

Document number: DS35516 Rev. 10 - 2 9 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Application Information (continued) PWM dimming can be achieved by driving the EN pin. An external open-collector NPN transistor or open-drain N-channel MOSFET can be used to drive the EN pin, as shown in Figure 16. Dimming is achieved by turning the LEDs ON and OFF for a portion of a single cycle. The PWM signal can be provided by a micro-controller or analog circuitry. Figure 17 is a typical response of LED current vs. PWM duty cycle on the EN pin. -OR- Fig. 16 Application Circuits for LED Driver with PWM Dimming Functionality Fig. 17 Typical LED current response vs. PWM duty cycle for REXT = 13Ω at 400Hz PWM frequency 40 60 80 100 LED CURRENT (mA) PWM DUTY CYCLE (%) 200

Document number: DS35516 Rev. 10 - 2 10 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Application Information (continued) To remove the potential of incorrect connection of the power supply damaging the lamp’s LEDs, many systems use some form of reverse polarity protection. One solution for reverse input polarity protection is to simply use a diode with a low VF in-line with the driver/LED combination. The low VF increases the available voltage to the LED stack and dissipates less power. A circuit example is presented in Fig. 18 using Diodes Inc. SBR® (Super Barrier Rectifier) technology. An SDM10U45LP (0.1A/45V) is shown, providing exceptionally low VF for its package size of 1mm x 0.6mm, equivalent to 0402 chip style package. Other reverse voltage ratings are also available on Diodes’ website, such as the SBR02U100LP (0.2A/100V) or SBR0220LP (0.2A/20V). Automotive applications commonly use this method for reverse battery protection. A second approach, shown in Fig. 19, improves upon the method shown in Fig. 18. Whereas the method in Fig. 18 protects the light engine, it will not function until the problem has been diagnosed and corrected. The method shown in Fig. 19 not only provides reverse polarity protection, it also corrects the reversed polarity, allowing the light engine to function. The BAS40BRW incorporates four low V F, Schottky diodes into a single package, allowing more voltage available for the LED stack and dissipating less power than that of standard rectifier bridges. Fig. 18 Application circuit for LED driver with reverse polarity protection Fig. 19 Application circuit for LED driver with assured operation regardless of polarity R S AL5802 V S BAS40BRW R S AL5802 SDM10U45LP V S

Document number: DS35516 Rev. 10 - 2 11 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Ordering Information (Note 11) Device Qualification Packaging Tape and Reel Quantity Part Number Suffix AL5802 Commercial SOT26 (SC74R) 3,000/Tape & Reel -7 AL5802 Commercial SOT26 (SC74R) 10,000/Tape & Reel -13 Note: 11. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information L102 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 2018 2019 Code Y Z A B C D E F G Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D L102 YM

Document number: DS35516 Rev. 10 - 2 12 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 (SC74R) SOT26 (SC74R) Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a - - 8° a1 - - 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 (SC74R) Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 D e E1 E b A2 A1 Seating Plane L c a Y1 G X Y C

Document number: DS35516 Rev. 10 - 2 13 of 13 www.diodes.com January 2021 © Diodes Incorporated AL5802 IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON- INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to i llustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and tec hnically trained engineering customers and users who design with Diodes products. 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