AGX-003135-030L00 MA-COM | Alldatasheet
Document overview
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Technical content
Features
GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Application Civilian and Military Pulsed Radar Product Description The MAGX-003135-030L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 3100 - 3500 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-003135-030L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Ordering Information
MAGX-003135-030L00 30W GaN Power Transistor MAGX-003135-SB1PPR Evaluation Fixture Typical RF Performance Freq. (MHz) Pin (W Peak) Pout (W Peak) Gain (dB) Eff (%) 3100 3 40 11.2 59.3 3300 3 40 11.2 57.7 3500 3 34 10.5 51.2 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=130mA (pulsed), F=3.1-3.5GHz, Pulse=500us, Duty=10%.
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle MAGX-003135-030L00 Production V1
23 Aug 11
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) +65V Supply Voltage (Vgg) -8 to 0V Supply Current (Id1) 3000 mA Input Power (Pin) +30 dBm Absolute Max. Junction/Channel Temp 200 ºC MTTF (TJ<200°C) 114 years Continuous Power Dissipation (Pdiss) at 85 ºC 27 W Pulsed Power Dissipation (Pavg) at 85 ºC 65 W Thermal Resistance, (Tchannel = 200 ºC) Pulsed 500uS, 10% Duty cycle 1.8 ºC/W Operating Temp -40 to +95C Storage Temp -65 to +150C Mounting Temperature See solder reflow profile ESD Min. - Machine Model (MM) 50 V ESD Min. - Human Body Model (HBM) >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V IDS - - 2.5 mA Gate Threshold Voltage VDS = 5V, ID = 6mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5V, ID = 1.5mA GM 1.0 - - S DYNAMIC CHARACTERISTICS Input Capacitance VDS = 0v, VGS = -8V, F = 1MHz CISS - 13.2 - pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz COSS - 5.6 - pF Reverse Transfer Capacitance VDS = 50V, VGS = -8V, F = 1MHz CRSS - 0.5 - pF
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle MAGX-003135-030L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Test Fixture Impedance INPUT NETWORK Zif OUTPUT NETWORK Zof Parameter Test Conditions Symbol Min Typ Max Units RF FUNCTIONAL TESTS Vdd=50V, Idq=130mA (pulsed), F=3.1-3.5GHz, Pulse=500us, Duty=10%. Output Power Pin = 3W Peak POUT 30 - W Peak W Ave Power Gain Pout = 30W Peak GP 10.0 11.0 - dB Drain Efficiency Pin = 3W Peak ηD 50 55 - % Load Mismatch Stability Pin = 3W Peak VSWR-S 5:1 - - Load Mismatch Tolerance Pin = 3W Peak VSWR-T 10:1 - - F (MHz) ZIF (Ω) ZOF (Ω) 3100 7.6 - j12.5 5.2 - j0.2 3300 7.5 - j11.4 6.0 + j0.2 3500 7.2 - j10.2 6.7 + j0.1
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle MAGX-003135-030L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Gain vs. Frequency 50V Drain Bias, Idq=0.13A Gain vs. Frequency 65V Drain Bias, Idq=0.13A
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle MAGX-003135-030L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed.
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle MAGX-003135-030L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed.
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle MAGX-003135-030L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Test Test Fixture Assembly Note: A .dwg circuit drawing is available upon request
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle MAGX-003135-030L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Outline Drawings TURNING THE DEVICE ON 1. Set VGS to the pinch-off (VP), typically -5V 2. Turn on VDS to nominal voltage (50V) 3. Increase VGS until the IDS current is reached 4. Apply RF power to desired level TURNING THE DEVICE OFF 1. Turn the RF power off 2. Decrease VGS down to VP 3. Decrease VDS down to 0V 4. Turn off VGS CORRECT DEVICE SEQUENCING