AGT4350R-HF

AGT4350R-HF COMCHIP | Alldatasheet

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Technical content

Features

• Low collector-emitter saturation voltage VCE(sat) and corresponding low RCE(sat). - High collector current capability. - High collector current gain. - AEC-Q101 Qualified. Silicon Epitaxial Planar Transistor - Improved efficiency due to reduced heat generation. Circuit Diagram Collector Base Emitter 2,4 Mechanical data - Case: SOT-223, molded plastic. - Molding compound: UL flammability classification rating 94V-0. - Terminals: Tin-plated, solderability per MIL-STD-202, method 208. Maximum Ratings (Ta=25°C unless otherwise noted) Collector-base breakdown voltage Unit SymbolParameter Value VCBO V Collector-emitter breakdown voltage VCEO V Emitter-base breakdown voltage Collector current-continuous VEBO IC PD V A 1.15Power dissipation (Note 1) W Storage temperature range TSTG -55 to +150 °C Thermal resistance, junction to air Junction temperature range RθJA TJ -55 to +150 227 °C/W Notes: 1. Device mounted on aprinted-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm². AQW-JTR33 Page 1 REV:A SOT-223 1 2 3 0.256(6.50) 0.240(6.10) 0.122(3.10) 0.114(2.90) 0.146(3.70) 0.130(3.30) 0.026(0.66) 0.004(0.10) 0.001(0.02) 0.067(1.70) 0.059(1.50) 0.287(7.30) 0.264(6.70) 0.045(1.15) Dimensions in inches and (millimeter) 0.016(0.40) 0.008(0.20) 0.035(0.90) 0.087(2.20)

Electrical Characteristics (Ta= 25°C unless otherwise specified) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cut-off current Unit SymbolParameter Min. V(BR)CBO V(BR)CEO V(BR)EBO IEBO 100 V V V nA Test Conditions IC = 10μA, IE = 0 IC = 1mA, IB = 0 IE = 10μA, IC = 0 VEB = 5V, IC = 0 Max. Collector cut-off current ICBO 0.1 µA VCB = 50V, IE = 0, TJ = 25°C Typ. VCE(sat) mV IC = 500mA , IB = 50mA Collector-emitter saturation voltage DC current gain hFE VCE = 2V, IC = 100mA 300 IC = 1A , IB = 50mA Base-emitter voltage VBE(on) Transition frequency fT MHZ100VCE = 5V, IC = 100mA, f = 100MHZ V Output capacitance Cob pFVCB = 10V, IE = Ie = 0, f = 1MHZ 25 IC = 1A, VCE = 2V Base-emitter saturation voltage VBE(sat) IC = 3A, IB = 300mA IC = 2A, IB = 100mA 160 V 1.2 1.2 300 1.1 VCE = 2V, IC = 500mA Comchip Technology CO., LTD. Page 2 Silicon Epitaxial Planar Transistor VCB = 50V, IE = 0, TJ = 150°C 50 300 200 100 VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 2V, IC = 3A IC = 2A , IB = 100mA 280 IC = 2A , IB = 200mA IC = 3A , IB = 300mA 260 370 AQW-JTR33 REV:A

Rating and Characteristic Curves (AGT4350R-HF) Silicon Epitaxial Planar Transistor Comchip Technology CO., LTD. Page 3 Fig.2 - Base-Emitter Voltage as a Function Current VBE, (V) IC, (A) 1.0 0.8 1.2 0.6 0.4 0.2 10.0001 0.001 0.01 0.1 10 VCE=2V Ta=-55°C Ta=150°C Ta=25°C Fig.1 - DC Current Gain as a Function of Collector Current IC, (A) hFE 400 200 600 1 10 1000 800 1200 1400 1600 VCE=2V Ta=-55°C Ta=150°C Ta=25°C Fig.4 - Collector-Emitter Saturation Voltage as a Function of Collector Current IC, (A) VBEsat, (mV) 1000 100 1 100.0001 0.001 0.01 0.1 IC/IB=10 Ta=150°C Ta=-55°C Ta=25°C Fig.3 - Base-Emitter Saturation Voltage as a Function of Collector Current 1 10 VBEsat, (V) IC, (A) 0.8 0.6 0.4 1.0 0.0001 0.001 0.01 0.1 Ta=-55°C Ta=150°C Ta=25°C IC/IB=10 1.2 1.4 0.2 Fig.5 - Equivalent on-Resistance as a Function of Collector Current RCEsat, (Ω) IC, (A) 1 100.0001 0.001 0.01 0.1 1000 100 0.1 0.01 IC/IB=10 Ta=150°C Ta=-55°C Ta=25°C 0.0001 0.001 0.01 0.1 AQW-JTR33 REV:A

Silicon Epitaxial Planar Transistor Comchip Technology CO., LTD. Page 4AQW-JTR33 REV:A Reel Taping Specification A B d T E F P P0 P1 W First 25 Empty Pockets Last 50 Empty Pockets Leader TapeTrailer Tape Components (mm) (inch) SOT-223 SYMBOL (inch) SOT-223 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 DD1D2 120° C T 0.25 ± 0.05 0.010 ± 0.002

Silicon Epitaxial Planar Transistor Comchip Technology CO., LTD. Page 5AQW-JTR33 REV:A Part Number Marking Code Marking Code Standard Packaging Case Type 4,000 REEL ( pcs ) Reel Size (inch) REEL PACK SOT-223 AGT4350R-HF T4350 XXX = Control code T4350 DG B A C F E Suggested P.C.B. PAD Layout SIZE (inch) 0.030 (mm) 0.75 1.60 2.30 0.063 0.091 4.55 0.179 A B C D 0.1343.40 6.15 7.75 0.242 0.305 E F G SOT-223 XXX