AGLN010V2-CSG100PP

AGLN060V5-CSG81 MICROSEMI | Alldatasheet

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© 2013 Microsemi Corporation IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power

• nanoPower Consumption—Industry’s Lowest Power
• 1.2 V to 1.5 V Core Voltage Support for Low Power
• Supports Single-Voltage System Operation
• Low Power Active FPGA Operation
• Flash*Freeze Technology Enables Ultra-Low Power Consumption while Maintaining FPGA Content
• Easy Entry to / Exit from Ultra-Low Power Flash*Freeze Mode Small Footprint Packages
• As Small as 3x3 mm in Size Wide Range of Features
• 10,000 to 250,000 System Gates
• Up to 36 kbits of True Dual-Port SRAM
• Up to 71 User I/Os Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal, Flash-Based CMOS Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design When Powered Off
• 250 MHz (1.5 V systems) and 160 MHz (1.2 V systems) System Performance In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard (AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock ® Designed to Secure FPGA Contents
• 1 . 2 V P r o g r a m m i n g High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure Advanced I/Os
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS
• Wide Range Power Supply Voltage Support per JESD8-B, Allowing I/Os to Operate from 2.7 V to 3.6 V
• Wide Range Power Supply Voltage Support per JESD8-12, Allowing I/Os to Operate from 1.14 V to 1.575 V
• I/O Registers on Input, Output, and Enable Paths
• Selectable Schmitt Trigger Inputs
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the IGLOO ® Family Clock Conditioning Circuit (CCC) and PLL†
• Up to Six CCC Blocks, One with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay Capabilities, and External Feedback
• Wide Input Frequency Range (1.5 MHz up to 250 MHz) Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9, and ×18 organizations)†
• True Dual-Port SRAM (except × 18 organization)† Enhanced Commercial Temperature Range
• Tj = -20°C to +85°C † AGLN030 and smaller devices do not support this feature. IGLOO nano Devices AGLN010 AGLN015 1 AGLN020 AGLN060 AGLN125 AGLN250 IGLOO nano-Z Devices1 AGLN030Z1 AGLN060Z1 AGLN125Z1 AGLN250Z1 System Gates 10,000 15,000 20,000 30,000 60,000 125,000 250,000 Typical Equivalent Macrocells 86 128 172 256 512 1,024 2,048 VersaTiles (D-flip-flops) 260 384 520 768 1,536 3,072 6,144 Flash*Freeze Mode (typical, µW) 2 4 4 5 10 16 24 RAM Kbits (1,024 bits) 2 – – – – 18 36 36 4,608-Bit Blocks2 ––– – 4 8 8 FlashROM Kbits (1,024 bits) 1 1 1 1 1 1 1 Secure (AES) ISP 2 ––– – Y e s Y e s Y e s Integrated PLL in CCCs 2,3 ––– – 1 1 1 VersaNet Globals 4 4 4 6 18 18 18 I/O Banks 2 3 3 2 2 2 4 Maximum User I/Os (packaged device) 34 49 52 77 71 71 68 Maximum User I/Os (Known Good Die) 34 – 52 83 71 71 68 Package Pins UC/CS QFN VQFP UC36 QN48 QN68 UC81, CS81 QN68 UC81, CS81 QN48, QN68 VQ100 CS81 VQ100 CS81 VQ100 CS81 VQ100 Notes: 1. Not recommended for new designs. 2. AGLN030 and smaller devices do not support this feature. 3. AGLN060, AGLN125, and AGLN250 in t he CS81 package do not support PLLs. 4. For higher densities and support of additional features, refer to the IGLOO and IGLOOe datasheets. Revision 17

IGLOO nano Devices AGLN010 AGLN015 1 AGLN020 AGLN060 AGLN125 AGLN250 IGLOO nano-Z Devices1 AGLN030Z1 AGLN060Z1 AGLN125Z1 AGLN250Z1 Known Good Die 34 – 52 83 71 71 68 QN68 – 49 49 49 – – – CS81 – – 52 66 60 60 60 VQ100 – – – 77 71 71 68 Notes: 1. Not recommended for new designs. 2. When considering migrating your design to a lower- or higher-density device, refer to the IGLOO datasheet and IGLOO FPGA Fabric User’s Guide to ensure compliance with design and board migration requirements. 3. When the Flash*Freeze pin is used to directly enable Flash*Fr eeze mode and not used as a regular I/O, the number of single- ended user I/Os available is reduced by one. 4. "G" indicates RoHS-compliant packages. Refer to "IGLOO nano Ordering Information" on page III for the location of the "G" in the part number. For nano devices, the VQ1 00 package is offered in both leaded and RoHS-compliant versions. All other packages are RoHS-compliant only. Table 1 • IGLOO nano FPGAs Package Sizes Dimensions Length × Width (mm\\mm) 3 x 3 4 x 4 5 x 5 6 x 6 8 x 8 14 x 14 Nominal Area (mm 2) 9 16 36 36 64 196 IGLOO nano Devices Status IGLOO nano-Z Devices Status AGLN010 Production AGLN015 Not recommended for new designs. AGLN020 Production AGLN030Z Not recommended for new designs. AGLN060 Production AGLN060Z Not recommended for new designs. AGLN125 Production AGLN125Z Not recommended for new designs. AGLN250 Production AGLN250Z Not recommended for new designs.

IGLOO nano Low Power Flash FPGAs Revision 17 III IGLOO nano Ordering Information Devices Not Recommended For New Designs AGLN015, AGLN030Z, AGLN060Z, AGLN125Z, and AGLN250Z are not recommended for new designs. Device Marking Microsemi normally topside marks the full ordering part number on each device. There are some exceptions to this, such as some of the Z feature grade nano devices, the V2 designator for IGLOO devices, and packages where space is physically limited. Packages that have limited characters available are UC36, UC81, CS81, QN48, QN68, and QFN132. On these specific packages, a subset of the device marking will be used that includes the required legal information and as much of the part number as allowed by character limitation of the device. In this case, devices will have a truncated device marking and may exclude the applications markings, such as the I designator for Industrial Devices or the ES designator for Engineering Samples. Notes: 1. Z-feature grade devices AGLN 060Z, AGLN125Z, and AGLN250Z do not support the enhanced nano features of Schmitt Trigger input, bus hold (hold previous I/O state in Flash*Freeze mode), cold-sparing, hot-swap I/O capability and 1.2 V programming. The AGLN030 Z feature grade does not suppo rt Schmitt trigger input, bus hold an d 1.2 V programming. For the VQ100, CS81, UC81, QN68, and QN48 packages, the Z feature grade and the N part number are not marked on the device. Z feature grade devices are not recommended for new designs. 2. AGLN030 is available in the Z feature grade only. 3. Marking Information: IGLOO nano V2 devices do not have a V2 marking, but IGLOO nano V5 devices are marked with a V5 designator. AGLN010 = 10,000 System Gates AGLN015 = 15,000 System Gates (AGLN015 is not recommended for new designs) AGLN020 = 20,000 System Gates AGLN030 = 30,000 System Gates AGLN060 = 60,000 System Gates AGLN125 = 125,000 System Gates AGLN250 = 250,000 System Gates Blank = Standard Z = nano devices without enhanced features Supply Voltage 2 = 1.2 V to 1.5 V 5 = 1.5 V only AGLN250 V2 Z VQ _ Part Number IGLOO nano Devices Package Type VQ = Very Thin Quad Flat Pack (0.5 mm pitch) DIELOT = Known Good Die QN = Quad Flat Pack No Leads (0.4 mm and 0.5 mm pitches)

100 I Y

G Lead-Free Packaging Application (Temperature Range) Blank = Enhanced Commercial ( –20°C to +85°C Junction Temperature) I = Industrial ( –40°C to +100°C Junction Temperature) Blank = Standard Packaging G= RoHS-Compliant Packaging PP= Pre-Production ES= Engineering Sample (Room Temperature Only) CS = Chip Scale Package (0.5 mm pitch) UC = Micro Chip Scale Package (0.4 mm pitch) Security Feature Y = Device Includes License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio Blank = Device Does Not Include License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio

IGLOO nano Low Power Flash FPGAs Revision 17 V Table of Contents IGLOO nano Device Overview IGLOO nano DC and Switching Characteristics Pin Descriptions Package Pin Assignments Datasheet Information

1 – IGLOO nano Device Overview General Description The IGLOO family of flash FPGAs, based on a 130-nm flash process, offers the lowest power FPGA, a single-chip solution, small footprint packages, reprogrammability, and an abundance of advanced features. The Flash*Freeze technology used in IGLOO nano devices enables entering and exiting an ultra-low power mode that consumes nanoPower while retaining SRAM and register data. Flash*Freeze technology simplifies power management through I/O and clock management with rapid recovery to operation mode. The Low Power Active capability (static idle) allo ws for ultra-low power c onsumption while the IGLOO nano device is completely functional in the system. This allows the IGLOO nano device to control system power management based on external inputs (e.g., scanning for keyboard stimulus) while consuming minimal power. Nonvolatile flash technology gives IGLOO nano devic es the advantage of being a secure, low power, single-chip solution that is Instant On. The IGLO O nano device is reprogrammable and offers time-to- market benefits at an ASIC-level unit cost. These features e nable designers to create high -density systems using existing ASIC or FPGA design flows and tools. IGLOO nano devices offer 1 kbit of on-chip, reprogra mmable, nonvolatile FlashROM storage as well as clock conditioning circuitry based on an integrated ph ase-locked loop (PLL). The AGLN030 and smaller devices have no PLL or RAM support. IGLOO nano devices have up to 250 k system gates, supported with up to 36 kbits of true dual-port SRAM and up to 71 user I/Os. IGLOO nano devices increase the breadth of the IGLOO product line by adding new features and packages for greater customer value in high volume consumer, portable, and battery-backed markets. Features such as smaller footprint packages designed with two-layer PCBs in mind, power consumption measured in nanoPower, Schmitt trigger, and bus hol d (hold previous I/O state in Flash*Freeze mode) functionality make these devices ideal for deployment in applications that require high levels of flexibility and low cost. Flash*Freeze Technology The IGLOO nano device offers unique Flash*Freeze technology, allowing the device to enter and exit ultra-low power Flash*Freeze mode. IGLOO nano devices do not need additional components to turn off I/Os or clocks while retaining the design inform ation, SRAM content, and registers. Flash*Freeze technology is combined wi th in-system programmability, which enables users to quickly and easily upgrade and update their designs in the final stages of manufacturing or in the field. The ability of IGLOO nano V2 devices to support a wide range of core vo ltage (1.2 V to 1.5 V) allows further reduction in power consumption, thus achieving the lowest total system power. During Flash*Freeze mode, each I/O can be set to the following configurations: hold previous state, tristate, HIGH, or LOW. The availability of low power modes, combined with reprogrammability, a single-chip and single-voltage solution, and small-footprint packages make IGLOO nano devices the best fit for portable electronics.

IGLOO nano Device Overview Flash Advantages Low Power Flash-based IGLOO nano devices exhibit power characteristics similar to those of an ASIC, making them an ideal choice for power-sensitive applications. IGLOO nano devices have only a very limited power-on current surge and no high-current transition period, both of which occur on many FPGAs. IGLOO nano devices also have low dynamic power co nsumption to further maximize power savings; power is reduced even further by the use of a 1.2 V core voltage. Low dynamic power consumption, combined with low static power consumption and Flash*Freeze technology, gives the IGLOO nano device the lowest total system power offered by any FPGA. Security Nonvolatile, flash-based IGLOO nano devices do not require a boot PROM, so there is no vulnerable external bitstream that can be easily copied. IGLOO nano devices incorporate FlashLock, which provides a unique combination of reprogrammability and desi gn security without external overhead, advantages that only an FPGA with nonvolatile flash programming can offer. IGLOO nano devices utilize a 128-bit flash-based lo ck and a separate AES key to provide the highest level of security in the FPGA industry for prog rammed intellectual property and configuration data. In addition, all FlashROM data in IGLOO nano device s can be encrypted prior to loading, using the industry-leading AES-128 (FIPS192) bit block ci pher encryption st andard. AES was adopted by the National Institute of Standards and Technology (N IST) in 2000 and replaces the 1977 DES standard. IGLOO nano devices have a built-in AES decryption engine and a flash-based AES key that make them the most comprehensive programmable logic device security solution available today. IGLOO nano devices with AES-based security prov ide a high level of protection fo r remote field u pdates over public networks such as the Internet, and are designed to ensure that valuable IP remains out of the hands of system overbuilders, system cloners, and IP thieves. Security, built into the FPGA fabric, is an inherent component of IGLOO nano devices. The flash cells are located beneath seven metal layers, and many devi ce design and layout techniques have been used to make invasive attacks extremely di fficult. IGLOO nano devices, with Fl ashLock and AES security, are unique in being highly resi stant to both invasive and noninvasive attacks. Your valuable IP is protected with industry-standard security, making remote ISP possible. An IGLOO nano device provides the best available security for programmable logic designs. Single Chip Flash-based FPGAs store their configuration informati on in on-chip flash cells. Once programmed, the configuration data is an inherent part of the FPGA structure, and no external configuration data needs to be loaded at system power-up (un like SRAM-based FPGAs). Theref ore, flash-based IGLOO nano FPGAs do not require system configuration compo nents such as EEPROMs or microcontrollers to load device configuration data. This reduces bill-of-materials costs and PCB area, and increases security and system reliability. Instant On Microsemi flash-based IGLO O nano devices support Level 0 of the Instant On classification standard. This feature helps in system component initializ ation, execution of critic al tasks before the processor wakes up, setup and configuration of memory blo cks, clock generation, and bus activity management. The Instant On feature of flash- based IGLOO nano devices greatly simplifies total system design and reduces total system cost, often eliminating the need for CPLDs and clock generation PLLs. In addition, glitches and brownouts in system power will not co rrupt the IGLOO nano device 's flash configuration, and unlike SRAM-based FPGAs, the device will not have to be reloaded when system power is restored. This enables the reduction or complete removal of the configuration PROM, expensive voltage monitor, brownout detection, and clock generator device s from the PCB design. Flash-based IGLOO nano devices simplify total system design and reduce cost and des ign risk while increasin g system reliability and improving system initialization time. IGLOO nano flash FPGAs enable the user to quickly enter and exit Flash*Freeze mode. This is done almost instantly (within 1 µs) and the device retains configuration and data in registers and RAM. Unlike SRAM-based FPGAs, the device does not need to reload configuration and design state from external memory components; instead it retains all necessary information to resume operation immediately.

IGLOO nano Low Power Flash FPGAs Revision 17 1-3 Reduced Cost of Ownership Advantages to the designer extend beyond low unit cost, performance, and ease of use. Unlike SRAM-based FPGAs, flash-based IGLOO nano devices allow all functionality to be Instant On; no external boot PROM is required. On-board securi ty mechanisms prevent access to all the programming information and enable secure remote updates of the FPGA logic. Designers can perform secure remote in-system reprogramming to support future design iterations and field upgrades with confid ence that valuable intellectual proper ty cannot be compromised or copied. Secure ISP can be performed using the industry- standard AES algorithm. The IGLOO nano device architecture mitigates the need for ASIC migratio n at higher user volumes. This makes IGLOO nano devices cost-effective ASIC replacement solutions , especially for applications in the consumer, networking/communications, computing, and avionics markets. With a variety of devices under $1, IGLOO nano FPGAs enable cost-effective implementation of programmable logic and quick time to market. Firm-Error Immunity Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere, strike a configuration cell of an SRAM FPGA. The energ y of the collision can ch ange the state of the configuration cell and thus change t he logic, routing, or I/O behavior in an unpredictable way. These errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a complete system failure. Firm errors do not exist in the configuration memory of IGLOO nano flash-based FPGAs. Once it is programmed, the flash cell co nfiguration element of IGLOO nano FPGAs cannot be altered by high-energy neutrons and is therefore im mune to them. Recoverable (or soft) errors occur in the user data SRAM of all FPGA devices. These can easily be mitigated by using error detection and correction (EDAC) circuitry built into the FPGA fabric. Advanced Flash Technology The IGLOO nano device offers many benefits, including nonvolatility and reprogrammability, through an advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design techniques are used to implement logic and contro l functions. The combination of fine granularity, enhanced flexible routing resources, and abundant fl ash switches allows for very high logic utilization without compromising device routability or perform ance. Logic functions within the device are interconnected through a four-level routing hierarchy. IGLOO nano FPGAs utilize design and process techniques to minimize power consumption in all modes of operation. Advanced Architecture The proprietary IGLOO nano architec ture provides granularity comparable to standard-cell ASICs. The IGLOO nano device consists of five distinct and programmable architectural features ( Figure 1-3 on page 1-5 to Figure 1-4 on page 1-5):

• Flash*Freeze technology
• FPGA VersaTiles
• Dedicated FlashROM
• Dedicated SRAM/FIFO memory
• Extensive CCCs and PLLs †
• Advanced I/O structure The FPGA core consists of a sea of VersaTiles. Each VersaTile can be configured as a three-input logic function, a D-flip-flop (with or without enable), or a latch by progr amming the appropriate flash switch interconnections. The versatility of the IGLOO nano core tile as eit her a three-input lookup table (LUT) equivalent or a D-flip-flop/latch with enable allows fo r efficient use of the FPGA fabric. The VersaTile capability is unique to the ProASIC ® family of third-generation-architecture flash FPGAs. VersaTiles are connected with any of the four leve ls of routing hierarchy. Flash switches are distributed throughout the device to provide nonvolatile, reconfigurable inte rconnect programming. Maximum core utilization is possible for virtually any design. † The AGLN030 and smaller devices do not support PLL or SRAM.

IGLOO nano Low Power Flash FPGAs Revision 17 1-7 User Nonvolatile FlashROM IGLOO nano devices have 1 kbit of on-chip, user-accessible, nonvolatile FlashROM. The FlashROM can be used in diverse system applications:

• Internet protocol addressing (wireless or fixed)
• System calibration settings
• Device serialization and/or inventory control
• Subscription-based business models (for example, set-top boxes)
• Secure key storage for secure communications algorithms
• Asset management/tracking
• Date stamping
• Version management The FlashROM is written using the standard IGLOO nano IEEE 1532 JTAG programming interface. The core can be individually programmed (erased and written), and on-chip AES decryption can be used selectively to securely load data over public networ ks (except in the AGLN030 and smaller devices), as in security keys stored in the FlashROM for a user design. The FlashROM can be programmed via the JTAG progr amming interface, and its contents can be read back either through the JTAG programming interface or via direct FPGA core addressing. Note that the FlashROM can only be programmed from the JTAG interface and cannot be programmed from the internal logic array. The FlashROM is programmed as 8 banks of 128 bits ; however, reading is performed on a byte-by-byte basis using a synchronous interface. A 7-bit address fr om the FPGA core defines which of the 8 banks and which of the 16 bytes within that bank are being read. The three most significant bits (MSBs) of the FlashROM address determine the bank, and the four least significant bits (LSBs) of the FlashROM address define the byte. The IGLOO nano development software solutions, Libero ® System-on-Chip (SoC) and Designer, have extensive support for the FlashROM. One such feat ure is auto-generation of sequential programming files for applications requiring a unique serial number in each part. Another feature enables the inclusion of static data for system version control. Data for the FlashROM can be generated quickly and easily using Microsemi Libero SoC and Designer software tools. Comprehensive programming file support is also included to allow for easy programming of large numbers of parts with differing FlashROM contents. SRAM and FIFO IGLOO nano devices (except the AGLN030 and smaller devices) have embedded SRAM blocks along their north and south sides. Each variable-aspect-rati o SRAM block is 4,608 bits in size. Available memory configurations ar e 256×18, 512×9, 1k×4, 2k×2, and 4k×1 bits. The in dividual blocks have independent read and write ports that can be confi gured with different bit widths on each port. For example, data can be sent through a 4-bit port and read as a single bitstream. The embedded SRAM blocks can be initialized via the device JTAG port (ROM emulation mode) using the UJTAG macro (except in the AGLN030 and smaller devices). In addition, every SRAM block has an embedded FI FO control unit. The contro l unit allows the SRAM block to be configured as a synchronous FIFO with out using additional core VersaTiles. The FIFO width and depth are programmable. The FIFO also feat ures programmable Almost Empty (AEMPTY) and Almost Full (AFULL) flags in addition to the norma l Empty and Full flags. The embedded FIFO control unit contains the counters necessary for generati on of the read and write address pointers. The embedded SRAM/FIFO blocks can be cascaded to create larger configurations. PLL and CCC Higher density IGLOO nano devices using either the two I/O bank or four I/O bank architectures provide designers with very flexible clock conditioning capa bilities. AGLN060, AGLN125, and AGLN250 contain six CCCs. One CCC (center west side) has a PLL. The AGLN030 and smaller devices use different CCCs in their architecture (CCC-GL). These CCC-GL s contain a global MUX but do not have any PLLs or programmable delays. For devices using the six CCC block architecture, these are located at the four corners and the centers of the east and west sides. All six CCC blocks are us able; the four corner CCCs and the east CCC allow simple clock delay operations as well as clock spine access.

IGLOO nano Device Overview The inputs of the six CCC blocks are accessible from the FPGA core or from dedicated connections to the CCC block, which are located near the CCC. The CCC block has these key features:

• Wide input frequency range (f IN_CCC) = 1.5 MHz up to 250 MHz
• Output frequency range (f OUT_CCC) = 0.75 MHz up to 250 MHz
• 2 programmable delay types for clock skew minimization
• Clock frequency synthesis (for PLL only) Additional CCC specifications:
• Internal phase shift = 0°, 90°, 180°, and 270°. Output phase shift depends on the output divider configuration (for PLL only).
• Output duty cycle = 50% ± 1.5% or better (for PLL only)
• Low output jitter: worst case < 2.5% × clock per iod peak-to-peak period jitter when single global network used (for PLL only)
• Maximum acquisition time is 300 µs (for PLL only)
• Exceptional tolerance to input period jitter—allowabl e input jitter is up to 1.5 ns (for PLL only)
• Four precise phases; maximum misalignment bet ween adjacent phases of 40 ps × 250 MHz / fOUT_CCC (for PLL only) Global Clocking IGLOO nano devices have ext ensive support for multiple clocking domains. In addition to the CCC and PLL support described above, there is a comprehensive global clock distribution network. Each VersaTile input and output port has access to nine VersaNets: six chip (main) and three quadrant global networks. The VersaNets can be driven by the CCC or directly accessed from the core via multiplexers (MUXes). The VersaNets can be used to distribute low-skew clock signals or for rapid distribution of high-fanout nets. I/Os with Advanced I/O Standards IGLOO nano FPGAs feature a flexible I/O structure, supporting a range of voltages (1.2 V, 1.2 V wide The I/Os are organized into banks with two, three, or four banks per device. The configuration of these banks determines the I/O standards supported. Each I/O module contains several input, output, and enable registers. These registers allow the implementation of various single-data-rate applications for all versions of nano devices and double-data- rate applications for the AGLN060, AGLN125, and AGLN250 devices. IGLOO nano devices support LVTTL and LVCMOS I/O standards, are hot-swappable, and support cold- sparing and Schmitt trigger. Hot-swap (also called hot-plug, or hot-insertion) is the operation of hot-insertion or hot-removal of a card in a powered-up system. Cold-sparing (also called cold-swap) refers to the ability of a devi ce to leave system data undisturbed when the system is powered up, while the component itself is powered down, or when power supplies are floating. Wide Range I/O Support IGLOO nano devices support JEDE C-defined wide range I/O operati on. IGLOO nano devices support both the JESD8-B specification, covering both 3 V and 3.3 V supplies, for an effective operating range of 2.7 V to 3.6 V, and JESD8-12 with its 1.2 V nominal, supporting an effective operating range of 1.14 V to 1.575 V. Wider I/O range means designers can eliminate power supplies or power conditioning components from the board or move to less costly components wit h greater tolerances. Wide range eases I/O bank management and provides enhanced protection from system voltage spikes, while providing the flexibility to easily run custom voltage applications.

IGLOO nano Low Power Flash FPGAs Revision 17 1-9 Specifying I/O States During Programming You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for PDB files generated from Designer v8.5 or greater. See the FlashPro User’s Guide for more information. Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have limited display of Pin Numbers only. 1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during programming. 2. From the FlashPro GUI, click PDB Configurat ion. A FlashPoint – Pr ogramming File Generator window appears. 3. Click the Specify I/O States During Programming button to display the Specify I/O States During Programming dialog box. 4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header. Select the I/Os you wish to modify (Figure 1-7 on page 1-9). 5. Set the I/O Output State. You can set Basic I/O se ttings if you want to use the default I/O settings for your pins, or use Custom I/O settings to cust omize the settings for each pin. Basic I/O state settings: 1 – I/O is set to drive out logic High 0 – I/O is set to drive out logic Low Last Known State – I/O is set to the last value that was driven out prior to entering the programming mode, and then held at that value during programming Z -Tri-State: I/O is tristated Figure 1-7 • I/O States During Programming Window

IGLOO nano Device Overview 6. Click OK to return to the FlashPoint – Programming File Generator window. Note: I/O States During programming are saved to the ADB and resulting programming files after completing programming file generation.

2 – IGLOO nano DC and Switching Characteristics General Specifications The Z feature grade does not support the enhanced nano features of Schmitt trigger input, Flash*Freeze bus hold (hold previous I/O state in Flash*Freeze mode), cold-sparing, and hot-swap I/O capability. Refer to "IGLOO nano Ordering Information" on page III for more information. Operating Conditions Stresses beyond those listed in Table 2-1 may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings are stress ratings only; functional operation of th e device at these or any other conditions beyond those listed under the Recommended O perating Conditions specified in Table 2-2 on page 2-2 is not implied. Table 2-1 • Absolute Maximum Ratings Symbol Parameter Limits Units VCC DC core supply voltage –0.3 to 1.65 V VJTAG JTAG DC voltage –0.3 to 3.75 V VPUMP Programming voltage –0.3 to 3.75 V VCCPLL Analog power supply (PLL) –0.3 to 1.65 V VCCI DC I/O buffer supply voltage –0.3 to 3.75 V VI 1 I/O input voltage –0.3 V to 3.6 V V TSTG

2 Storage temperature –65 to +150 °C

2 Junction temperature +125 °C

Notes: 1. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may undershoot or overshoot according to the limits shown in Table 2-4 on page 2-3. 2. For flash programming and retention maximum limits, refer to Table 2-3 on page 2-2, and for recommended operating limits, refer to Table 2-2 on page 2-2.

IGLOO nano DC and Switching Characteristics Table 2-2 • Recommended Operating Conditions 1 Symbol Parameter Extended Commercial Industrial Units TJ Junction temperature –20 to + 85 2 –40 to +100 2 °C VJTAG JTAG DC voltage 1.4 to 3.6 1.4 to 3.6 V VPUMP 6 Programming voltage Programming mode 3.15 to 3.45 3.15 to 3.45 V Operation 0 to 3.6 0 to 3.6 V VCCPLL7 Analog power supply (PLL) 1.2 V–1.5 V wide range core supply voltage4 1.14 to 1.575 1.14 to 1.575 V VCCI and VMV 8,9

3.3 V DC wide range supply voltage

10 2.7 to 3.6 2.7 to 3.6 V Notes: 1. All parameters representing voltages are measured with respect to GND unless otherwise specified. 2. Default Junction Temperature Range in the Libero SoC software is set to 0°C to +70°C for commercial, and -40°C to +85°C for industrial. To ensure targeted reliability standards are met across the full range of junction temperatures, Microsemi recommends using custom settings for temperature range before running timing and power analysis tools. For more information regarding custom settings, refer to the New Project Dialog Box in the Libero Online Help. 3. For IGLOO ® nano V5 devices 4. For IGLOO nano V2 devices only, operating at VCCI VCC 5. IGLOO nano V5 devices can be programmed with the VCC core voltage at 1.5 V only. IGLOO nano V2 devices can be programmed with the VCC core voltage at 1.2 V (with FlashP ro4 only) or 1.5 V. If you are using FlashPro3 and want to do in-system programming using 1.2 V, please contact the factory. 6. V PUMP can be left floating during operation (not programming mode). 7. VCCPLL pins should be tied to VCC pins. See the "Pin Descriptions" chapter for further information. 8. VMV pins must be connected to the corresponding VCCI pins. See the Pin Descriptions chapter of the IGLOO nano FPGA Fabric User’s Guide for further information. 9. The ranges given here are for power supplies only. T he recommended input voltage ranges specific to each I/O standard are given in Table 2-21 on page 2-19. VCCI should be at the same voltage within a given I/O bank. 10. 3.3 V wide range is compliant to the JESD8-B specification and supports 3.0 V VCCI operation. Table 2-3 • Flash Programming Limits – Retention, Storage, and Operating Temperature1 Product Grade Programming Cycles Program Retention (biased/unbiased) Maximum Storage Temperature TSTG (°C) 2 Maximum Operating Junction Temperature TJ (°C) 2 Commercial 500 20 years 110 100 Industrial 500 20 years 110 100 Notes: 1. This is a stress rating only; functional operation at any condition other than those indicated is not implied. 2. These limits apply for program/data retention only. Refer to Table 2-1 on page 2-1 and Table 2-2 for device operating conditions and absolute limits.

IGLOO nano Low Power Flash FPGAs Revision 17 2-3 I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial) Sophisticated power-up management circuitry is designed into every IGLOO nano device. These circuits ensure easy transition from the powered-off state to the powered-up state of the device. The many different supplies can power up in any sequence with minimized current spikes or surges. In addition, the I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1 on page 2-4. There are five regions to consider during power-up. IGLOO nano I/Os are activated only if ALL of the following three conditions are met: 1. VCC and VCCI are above the mi nimum specified trip points ( Figure 2-1 and Figure 2-2 on page 2-5). 2. VCCI > VCC – 0.75 V (typical) 3. Chip is in the operating mode. VCCI Trip Point: Ramping up (V5 devices): 0.6 V < trip_point_up < 1.2 V Ramping down (V5 devices): 0.5 V < trip_point_down < 1.1 V Ramping up (V2 devices): 0.75 V < trip_point_up < 1.05 V Ramping down (V2 devices): 0.65 V < trip_point_down < 0.95 V VCC Trip Point: Ramping up (V5 devices): 0.6 V < trip_point_up < 1.1 V Ramping down (V5 devices): 0.5 V < trip_point_down < 1.0 V Ramping up (V2 devices): 0.65 V < trip_point_up < 1.05 V Ramping down (V2 devices): 0.55 V < trip_point_down < 0.95 V VCC and VCCI ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following:

• During programming, I/Os become tristated and weakly pulled up to VCCI.
• JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O behavior. Table 2-4 • Overshoot and Undershoot Limits 1 VCCI Average VCCI–GND Overshoot or Undershoot Duration as a Percentage of Clock Cycle2 Maximum Overshoot/ Undershoot2 2.7 V or less 10% 1.4 V 5% 1.49 V 3 V 10% 1.1 V 5% 1.19 V 3.3 V 10% 0.79 V 5% 0.88 V 3.6 V 10% 0.45 V 5% 0.54 V Notes: 1. Based on reliability requirements at 85°C. 2. The duration is allowed at one out of si x clock cycles. If the overshoot/unders hoot occurs at one out of two cycles, the maximum overshoot/undershoot has to be reduced by 0.15 V.

IGLOO nano DC and Switching Characteristics PLL Behavior at Brownout Condition Microsemi recommends using monotonic power supplie s or voltage regulators to ensure proper power- up behavior. Power ramp-up should be monotonic at least until VCC and VCCPLX exceed brownout activation levels (see Figure 2-1 and Figure 2-2 on page 2-5 for more details). When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ± 0.25 V for V5 devices, and 0.75 V ± 0.2 V for V2 device s), the PLL output lock signal goes LOW and/or the output clock is lost. Refer to the "Brownout Voltage" section in the "Power-Up/-Down Behavior of Low Power Flash Devices" chapter of the IGLOO nano FPGA Fabric User’s Guide for information on clock and lock recovery. Internal Power-Up Activation Sequence 1. Core 2. Input buffers 3. Output buffers, after 200 ns delay from input buffer activation To make sure the transition from input buffers to output buffers is clean, en sure that there is no path longer than 100 ns from input buffer to output buffer in your design. Figure 2-1 • V5 Devices – I/O State as a Function of VCCI and VCC Voltage Levels Region 1: I/O buffers are OFF Region 2: I/O buffers are ON. I/Os are functional but slower because VCCI / VCC are below specification. For the same reason, input buffers do not meet VIH/VIL levels, and output buffers to not meet VOH / VOL levels. Min VCCI datasheet specification voltage at a selected I/O standard; i.e., 1.425 V or 1.7 V or 2.3 V or 3.0 V VCC VCC = 1.425 V Region 1: I/O Buffers are OFF Activation trip point: Va = 0.85 V ± 0.25 V Deactivation trip point: Vd = 0.75 V ± 0.25 V Activation trip point: Va = 0.9 V ± 0.3 V Deactivation trip point: Vd = 0.8 V ± 0.3 V VCC = 1.575 V Region 5: I/O buffers are ON and power supplies are within specification. I/Os meet the entire datasheet and timer specifications for speed, VIH / VIL , VOH / VOL , etc. Region 4: I/O buffers are ON. I/Os are functional but slower because VCCI is below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH/VOL levels. where VT can be from 0.58 V to 0.9 V (typically 0.75 V) VCCI Region 3: I/O buffers are ON. I/Os are functional; I/O DC specifications are met, but I/Os are slower because the VCC is below specification. VCC = VCCI + VT

IGLOO nano Low Power Flash FPGAs Revision 17 2-5 Figure 2-2 • V2 Devices – I/O State as a Function of VCCI and VCC Voltage Levels Region 1: I/O buffers are OFF Region 2: I/O buffers are ON. I/Os are functional but slower because VCCI / VCC are below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH/VOL levels. Min VCCI datasheet specification voltage at a selected I/O 2.3 V, or 3.0 V VCC VCC = 1.14 V Region 1: I/O Buffers are OFF Activation trip point: Va = 0.85 V ± 0.2 V Deactivation trip point: Vd = 0.75 V ± 0.2 V Activation trip point: Va = 0.9 V ± 0.15 V Deactivation trip point: Vd = 0.8 V ± 0.15 V VCC = 1.575 V Region 5: I/O buffers are ON and power supplies are within specification. I/Os meet the entire datasheet and timer specifications for speed, VIH / VIL , VOH / VOL , etc. Region 4: I/O buffers are ON. I/Os are functional but slower because VCCI is below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH / VOL levels. where VT can be from 0.58 V to 0.9 V (typically 0.75 V) VCCI Region 3: I/O buffers are ON. I/Os are functional; I/O DC specifications are met, but I/Os are slower because the VCC is below specification. VCC = VCCI + VT

IGLOO nano DC and Switching Characteristics Thermal Characteristics Introduction The temperature variable in the Microsemi Designer software refers to the junction temperature, not the ambient temperature. This is an important distin ction because dynamic and static power consumption cause the chip junction temperature to be higher than the ambient temperature. EQ 1 can be used to calculate junction temperature. TJ = Junction Temperature = T + TA EQ 1 where: T A = Ambient temperature T = Temperature gradient between junction (silicon) and ambient T = ja * P ja = Junction-to-ambient of the package. ja numbers are located in Figure 2-5. P = Power dissipation Package Thermal Characteristics The device junction-to-case thermal resistivity is jc and the junction-to-ambient air thermal resistivity is ja. The thermal characteristics for ja are shown for two air flow rates. The maximum operating junction temperature is 100°C. EQ 2 shows a sample calculation of th e maximum operating power dissipation allowed for a 484-pin FBGA package at commercial temperature and in still air. EQ 2 Temperature and Voltage Derating Factors Maximum Power Allowed Max. junction temp. (C) Max. ambient temp. ( C)– Table 2-5 • Package Thermal Resistivities Package Type Pin Count jc ja UnitsStill Air 200 ft./ min. 500 ft./ min. Chip Scale Package (CSP) 36 TBD TBD TBD TBD C/W

81 TBD TBD TBD TBD C/W

Quad Flat No Lead (QFN) 48 TBD TBD TBD TBD C/W

68 TBD TBD TBD TBD C/W

100 TBD TBD TBD TBD C/W

Very Thin Quad Flat Pack (VQFP) 100 10.0 35.3 29.4 27.1 C/W Table 2-6 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ = 70°C, VCC = 1.425 V) For IGLOO nano V2 or V5 Devices, 1.5 V DC Core Supply Voltage Array Voltage VCC (V) Junction Temperature (°C) –40°C –20°C 0°C 25°C 70°C 85°C 100°C

IGLOO nano Low Power Flash FPGAs Revision 17 2-7 Calculating Power Dissipation Quiescent Supply Current Quiescent supply current (IDD) calculation depends on multiple factors, including operating voltages (VCC, VCCI, and VJTAG), operati ng temperature, system clock frequency, and power mode usage. Microsemi recommends using the Power Calculator and SmartPower software estimation tools to evaluate the projected static and active power bas ed on the user design, pow er mode usage, operating voltage, and temperature. Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ = 70°C, VCC = 1.14 V) For IGLOO nano V2, 1.2 V DC Core Supply Voltage Array Voltage VCC (V) Junction Temperature (°C) –40°C –20°C 0°C 25°C 70°C 85°C 100°C Table 2-8 • Power Supply State per Mode Modes/Power Supplies Power Supply Configurations VCC VCCPLL VCCI VJTAG VPUMP Flash*Freeze On On On On On/off/floating Sleep Off Off On Off Off Shutdown Off Off Off Off Off No Flash*Freeze On On On On On/off/floating Note: Off: Power Supply level = 0 V Table 2-9 • Quiescent Supply Current (IDD) Characteristics, IGLOO nano Flash*Freeze Mode* Core Voltage AGLN010 AGLN015 AGLN020 AGLN060 AGLN125 AGLN250 Units Typical (25°C) 1.2 V 1.9 3.3 3.3 8 13 20 µA 1.5 V 5.8 6 6 10 18 34 µA Note: *IDD includes VCC, VPUMP, VCCI, VCCPLL, and VMV currents. Values do not include I/O static contribution, which is shown in Table 2-13 on page 2-9 through Table 2-14 on page 2-9 and Table 2-15 on page 2-10 through Table 2-18 on page 2-11 (PDC6 and PDC7).

IGLOO nano DC and Switching Characteristics Table 2-10 • Quiescent Supply Current (IDD) Characteristics, IGLOO nano Sleep Mode* Core Voltage AGLN010 AGLN015 AGLN020 AGLN060 AGLN125 AGLN250 Units VCCI= 1.2 V (per bank) Typical (25°C) VCCI = 1.5 V (per bank) Typical (25°C)

1.2 V /

1.5 V VCCI = 1.8 V (per bank) Typical (25°C) 1.5 V VCCI = 2.5 V (per bank) Typical (25°C) 1.5 V VCCI = 3.3 V (per bank) Typical (25°C) 1.5 V Note: *IDD = NBANKS * ICCI. Table 2-11 • Quiescent Supply Current (IDD) Characteristics, IGLOO nano Shutdown Mode Core Voltage AGLN010 AGLN015 AGL N020 AGLN060 AGLN125 AGLN250 Units Typical (25°C) 1.2 V / 1.5 V 0 0 0 0 0 0 µA Table 2-12 • Quiescent Supply Current (IDD), No IGLOO nano Flash*Freeze Mode1 Core Voltage AGLN010 AGLN015 AGLN020 AGLN060 AGLN125 AGLN250 Units ICCA Current2 Typical (25°C) 1.2 V 3.7 5 5 10 13 18 µA

1.5 V 8 14 14 20 28 44 µA

VCCI / VJTAG = 1.2 V (per bank) Typical (25°C) VCCI / VJTAG = 1.5 V (per bank) Typical (25°C) VCCI / VJTAG = 1.8 V (per bank) Typical (25°C) VCCI / VJTAG = 2.5 V (per bank) Typical (25°C) VCCI / VJTAG = 3.3 V (per bank) Typical (25°C) Notes: 1. IDD = N BANKS * ICCI + ICCA. JTAG counts as one bank when powered. 2. Includes VCC, VCCPLL, and VPUMP currents.

IGLOO nano Low Power Flash FPGAs Revision 17 2-9 Power per I/O Pin Table 2-13 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings Applicable to IGLOO nano I/O Banks VCCI (V) Dynamic Power PAC9 (µW/MHz) 1 Single-Ended 3.3 V LVTTL / 3.3 V LVCMOS 3.3 16.38 3.3 V LVTTL / 3.3 V LVCMOS – Schmitt Trigger 3.3 18.89

3.3 V LVCMOS Wide Range

2 3.3 16.38 3.3 V LVCMOS Wide Range – Schmitt Trigger 3.3 18.89 2.5 V LVCMOS 2.5 4.71 2.5 V LVCMOS – Schmitt Trigger 2.5 6.13 1.8 V LVCMOS 1.8 1.64 1.8 V LVCMOS – Schmitt Trigger 1.8 1.79 1.5 V LVCMOS (JESD8-11) 1.5 0.97 1.5 V LVCMOS (JESD8-11) – Schmitt Trigger 1.5 0.96

1.2 V LVCMOS

3 1.2 0.57 1.2 V LVCMOS – Schmitt Trigger3 1.2 0.52 1.2 V LVCMOS Wide Range3 1.2 0.57 1.2 V LVCMOS Wide Range – Schmitt Trigger3 1.2 0.52 Notes: 1. PAC9 is the total dynamic power measured on V CCI. 2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B specification. 3. Applicable to IGLOO nano V2 devices operating at VCCI  VCC. Table 2-14 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings1 Applicable to IGLOO nano I/O Banks CLOAD (pF) VCCI (V) Dynamic Power PAC10 (µW/MHz)2 Single-Ended 3.3 V LVTTL / 3.3 V LVCMOS 5 3.3 107.98 3 5 3.3 107.98 2.5 V LVCMOS 5 2.5 61.24 1.8 V LVCMOS 5 1.8 31.28 1.5 V LVCMOS (JESD8-11) 5 1.5 21.50 4 51 . 2 1 5 . 2 2 Notes: 1. Dynamic power consumption is given for standard load and software default drive strength and output slew. 2. PAC10 is the total dynamic power measured on VCCI. 3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B specification. 4. Applicable for IGLOO nano V2 devices operating at VCCI  VCC.

IGLOO nano DC and Switching Characteristics Power Consumption of Various Internal Resources Table 2-15 • Different Components Contributing to Dynamic Power Consumption in IGLOO nano Devices For IGLOO nano V2 or V5 Devices, 1.5 V Core Supply Voltage Parameter Definition Device Specific Dynamic Power (µW/MHz) AGLN250 AGLN125 AGLN060 AGLN020 AGLN015 AGLN010 PAC1 Clock contribution of a Global Rib 4.421 4.493 2.700 0 0 0 PAC4 Clock contribution of a VersaTile used as a sequential module PAC5 First contribution of a VersaTile used as a sequential module 0.057 PAC6 Second contribution of a VersaTile used as a sequential module 0.207 PAC7 Contribution of a VersaTile used as a combinatorial module 0.17 PAC8 Average contribution of a routing net 0.7 PAC9 Contribution of an I/O input pin (standard-dependent) See Table 2-13 on page 2-9. PAC10 Contribution of an I/O output pin (standard-dependent) See Table 2-14. PAC11 Average contribution of a RAM block during a read operation

25.00 N/A

PAC12 Average contribution of a RAM block during a write operation

30.00 N/A

PAC13 Dynamic contribution for PLL 2.70 N/A Table 2-16 • Different Components Contributing to the Static Power Consumption in IGLOO nano Devices For IGLOO nano V2 or V5 Devices, 1.5 V Core Supply Voltage Parameter Definition Device -Specific Static Power (mW) AGLN250 AGLN125 AGLN060 AGLN020 AGLN015 AGLN010 PDC1 Array static powe r in Active mode See Table 2-12 on page 2-8 PDC2 Array static power in Static (Idle) mode See Table 2-12 on page 2-8 PDC3 Array static power in Flash*Freeze mode See Table 2-9 on page 2-7 PDC4 1 Static PLL contribution 1.84 N/A PDC5 Bank quiescent power (VCCI-dependent)2 See Table 2-12 on page 2-8 Notes: 1. Minimum contribution of the PLL when running at lowest frequency. 2. For a different output load, drive strength, or slew ra te, Microsemi recommends using the Microsemi power spreadsheet calculator or the SmartPower tool in Libero SoC.

IGLOO nano Low Power Flash FPGAs Revision 17 2-11 Table 2-17 • Different Components Contributing to Dynamic Power Consumption in IGLOO nano Devices For IGLOO nano V2 Devices, 1.2 V Core Supply Voltage Parameter Definition Device-Specific Dynamic Power (µW/MHz) AGLN250 AGLN125 AGLN060 AGLN020 AGLN015 AGLN010 PAC1 Clock contribution of a Global Rib 2.829 2.875 1.728 0 0 0 PAC4 Clock contribution of a VersaTile used as a sequential module PAC5 First contribution of a VersaTile used as a sequential module 0.045 PAC6 Second contribution of a VersaTile used as a sequential module 0.186 PAC7 Contribution of a VersaTile used as a combinatorial module 0.11 PAC8 Average contributio n of a routing net 0.45 PAC9 Contribution of an I/O input pin (standard-dependent) See Table 2-13 on page 2-9 PAC10 Contribution of an I/O output pin (standard-dependent) See Table 2-14 on page 2-9 PAC11 Average contribution of a RAM block during a read operation PAC12 Average contribution of a RAM block during a write operation PAC13 Dynamic contribution for PLL 2.10 N/A Table 2-18 • Different Components Contributing to the Static Power Consumption in IGLOO nano Devices For IGLOO nano V2 Devices, 1.2 V Core Supply Voltage Parameter Definition Device-Specific Static Power (mW) AGLN250 AGLN125 AGLN060 AGLN020 AGLN015 AGLN010 PDC1 Array static power in Active mode See Table 2-12 on page 2-8 PDC2 Array static power in Static (Idle) mode See Table 2-12 on page 2-8 PDC3 Array static power in Flash*Freeze mode See Table 2-9 on page 2-7 PDC4 1 Static PLL contribution 0.90 N/A PDC5 Bank quiescent power (VCCI-dependent)2 See Table 2-12 on page 2-8 Notes: 1. Minimum contribution of the PLL when running at lowest frequency. 2. For a different output load, drive strength, or slew ra te, Microsemi recommends using the Microsemi power spreadsheet calculator or the SmartPower tool in Libero SoC.

IGLOO nano DC and Switching Characteristics Power Calculation Methodology This section describes a simplified method to estima te power consumption of an application. For more accurate and detailed power estimations, use the SmartPower tool in Libero SoC software. The power calculation methodology described below uses the following variables:

• The number of PLLs as well as the number a nd the frequency of each output clock generated
• The number of combinatorial and sequential cells used in the design
• The internal clock frequencies
• The number and the standard of I/O pins used in the design
• The number of RAM blocks used in the design
• Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 2-19 on page 2-14.
• Enable rates of output buffers—guidelines are provided for typical applications in Table 2-20 on page 2-14.
• Read rate and write rate to the memory—guidel ines are provided for typical applications in Table 2-20 on page 2-14. The calculation should be repeated for each clock domain defined in the design. Methodology Total Power Consumption—P TOTAL PTOTAL = PSTAT + PDYN PSTAT is the total static power consumption. PDYN is the total dynamic power consumption. Total Static Power Consumption—P STAT PSTAT = (PDC1 or PDC2 or PDC3) + NBANKS * PDC5 NBANKS is the number of I/O banks powered in the design. Total Dynamic Power Consumption—P DYN PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL Global Clock Contribution—P CLOCK PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL* PAC4) * FCLK NSPINE is the number of global spines used in the user design—guidelines are provided in the "Spine Architecture" section of the IGLOO nano FPGA Fabric User's Guide. NROW is the number of VersaTile rows used in the design—guidelines are provided in the "Spine Architecture" section of the IGLOO nano FPGA Fabric User's Guide. FCLK is the global clock signal frequency. NS-CELL is the number of VersaTiles used as sequential modules in the design. PAC1, PAC2, PAC3, and PAC4 are device-dependent. Sequential Cells Contribution—P S-CELL PS-CELL = NS-CELL * (PAC5 + 1 / 2 * PAC6) * FCLK NS-CELL is the number of VersaTiles used as sequential modules in the design. When a multi-tile sequential cell is used, it should be accounted for as 1. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-19 on page 2-14. FCLK is the global clock signal frequency.

IGLOO nano Low Power Flash FPGAs Revision 17 2-13 Combinatorial Cells Contribution—P C-CELL PC-CELL = NC-CELL* 1 / 2 * PAC7 * FCLK NC-CELL is the number of VersaTiles used as combinatorial modules in the design. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-19 on page 2-14. FCLK is the global clock signal frequency. Routing Net Contribution—P NET PNET = (NS-CELL + NC-CELL) * 1 / 2 * PAC8 * FCLK NS-CELL is the number of VersaTiles used as sequential modules in the design. NC-CELL is the number of VersaTiles used as combinatorial modules in the design. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-19 on page 2-14. FCLK is the global clock signal frequency. I/O Input Buffer Contribution—P INPUTS PINPUTS = NINPUTS * 2 / 2 * PAC9 * FCLK NINPUTS is the number of I/O input buffers used in the design. 2 is the I/O buffer toggle rate—guidelines are provided in Table 2-19 on page 2-14. FCLK is the global clock signal frequency. I/O Output Buffer Contribution—P OUTPUTS POUTPUTS = NOUTPUTS * 2 / 2 * 1 * PAC10 * FCLK NOUTPUTS is the number of I/O output buffers used in the design. 2 is the I/O buffer toggle rate—guidelines are provided in Table 2-19 on page 2-14. 1 is the I/O buffer enable rate—guidelines are provided in Table 2-20 on page 2-14. FCLK is the global clock signal frequency. RAM Contribution—P MEMORY PMEMORY = PAC11 * NBLOCKS * FREAD-CLOCK * 2 + PAC12 * NBLOCK * FWRITE-CLOCK * 3 NBLOCKS is the number of RAM blocks used in the design. FREAD-CLOCK is the memory read clock frequency. 2 is the RAM enable rate for read operations. FWRITE-CLOCK is the memory write clock frequency. 3 is the RAM enable rate for write operations—guidelines are provided in Table 2-20 on page 2-14. PLL Contribution—P PLL PPLL = PDC4 + PAC13 *FCLKOUT FCLKOUT is the output clock frequency.1 1. If a PLL is used to generate more than one output clock, include each output clock in the formula by adding its corresponding contribution (PAC13* FCLKOUT product) to the total PLL contribution.

IGLOO nano DC and Switching Characteristics Guidelines Toggle Rate Definition A toggle rate defines the frequency of a net or logic elem ent relative to a clock. It is a percentage. If the toggle rate of a net is 100%, this means that this net switches at half the clock frequency. Below are some examples:

• The average toggle rate of a shift register is 100% because all flip-flop outputs toggle at half of the clock frequency.
• The average toggle rate of an 8-bit counter is 25%: – Bit 0 (LSB) = 100% – Bit 1 = 50% – Bit 2 = 25% – Bit 7 (MSB) = 0.78125% Enable Rate Definition Output enable rate is the average percentage of ti me during which tristate outputs are enabled. When nontristate output buffers are used, the enable rate should be 100%. Table 2-19 • Toggle Rate Guidelines Recommended for Power Calculation Component Definition Guideline 1 Toggle rate of VersaTile outputs 10% 2 I/O buffer toggle rate 10% Table 2-20 • Enable Rate Guidelines Recommended for Power Calculation Component Definition Guideline 1 I/O output buffer enable rate 100% 2 RAM enable rate for read operations 12.5% 3 RAM enable rate for write operations 12.5%

IGLOO nano Low Power Flash FPGAs Revision 17 2-15 User I/O Characteristics Timing Model Figure 2-3 • Timing Model Operating Conditions: STD Speed, Commercial Temperature Range (TJ = 70°C), Worst-Case VCC = 1.425 V, for DC 1.5 V Core Voltage, Applicable to V2 and V5 Devices DQ Y Y DQDQ DQY Combinational Cell Combinational Cell Combinational Cell I/O Module (Registered) I/O Module (Non-Registered) Register Cell Register Cell I/O Module (Registered) I/O Module (Non-Registered) LVCMOS 2.5 V Output Drive Strength = 8 mA High Slew Rate Input LVCMOS 2.5 V LVCMOS 1.5 V LVTTL 3.3 V Output drive strength = 8 mA High slew rate Y Combinational Cell Y Combinational Cell Y Combinational Cell I/O Module (Non-Registered) LVTTLOutput drive strength = 8 mA High slew rate I/O Module (Non-Registered) LVCMOS 1.5 VOutput drive strength = 2 mA High slew rate LVTTLOutput drive strength = 4 mA High slew rate I/O Module (Non-Registered) Input LVTTL Clock Input LVTTL Clock Input LVTTL Clock tPD = 1.18 ns tPD = 0.90 ns tDP = 1.99 ns tPD = 1.60 ns tDP = 2.35 ns tPD = 1.17 ns tDP = 1.96 ns tPD = 0.87 ns tDP = 2.65 ns tPD = 0.91 ns tPY = 0.85 ns tCLKQ = 0.89 ns tOCLKQ = 1.00 ns tSUD = 0.81 ns tOSUD = 0.51 ns tDP = 1.96 ns tPY = 0.85 ns tPY = 1.15 ns tCLKQ = 0.89 ns tSUD = 0.81 ns tPY = 0.85 ns tICLKQ = 0.42 ns tISUD = 0.47 ns tPY = 1.06 ns

IGLOO nano DC and Switching Characteristics Figure 2-4 • Input Buffer Timing Model and Delays (example) tPY (R) PAD Y Vtrip GND tPY (F) Vtrip 50%50% VIH VCC VIL tDIN (R) DIN GND tDIN (F) 50%50% VCC PAD Y tPY D CLK Q I/O Interface DIN tDIN To Array tPY = MAX(tPY(R), tPY(F)) tDIN = MAX(tDIN(R), tDIN(F))

IGLOO nano Low Power Flash FPGAs Revision 17 2-17 Figure 2-5 • Output Buffer Model and Delays (example) tDP (R) PAD VOL tDP (F) VtripVtrip VOH VCC D 50% 50% VCC 0 V DOUT 50% 50% 0 V tDOUT (R) tDOUT (F) From Array PAD tDP Std Load D CLK Q I/O Interface DOUT D tDOUT tDP = MAX(tDP(R), tDP(F)) tDOUT = MAX(tDOUT(R), tDOUT(F))

IGLOO nano DC and Switching Characteristics Figure 2-6 • Tristate Output Buffer Timing Model and Delays (example) D CLK Q D CLK Q 10% VCCI tZL Vtrip 50% tHZ 90% VCCI tZH Vtrip 50% 50% tLZ 50% EOUT PAD D E 50% tEOUT (R) 50% tEOUT (F) PAD DOUT EOUT D I/O Interface E tEOUT tZLS Vtrip 50% tZHS Vtrip 50%EOUT PAD D E 50% 50%tEOUT (R) tEOUT (F) 50% VCC VCC VCC VCCI VCC VCC VCC VOH VOL VOL tZL, tZH, tHZ, tLZ, tZLS, tZHS tEOUT = MAX(tEOUT(r), tEOUT(f))

IGLOO nano Low Power Flash FPGAs Revision 17 2-19 Overview of I/O Performance Summary of I/O DC Input and Output Levels – Default I/O Software Settings Table 2-21 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions—Softwar e Default Settings I/O Standard Drive Strength Equivalent Software Default Drive Strength2 Slew Rate VIL VIH VOL VOH IOL 1 IOH1 Min. V Max. V Min. V Max. V Max. V Min. Vm A m A

3.3 V LVTTL /

3.3 V LVCMOS

µA 100 µA Wide Range4,5 µA 100 µA Notes: 1. Currents are measured at 85°C junction temperature. 2. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range, as specified in the JESD8-B specification. 4. Applicable to IGLOO nano V2 devices operating at VCCI VCC . 5. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range, as specified in the JESD8-12 specification. Table 2-22 • Summary of Maximum and Minimum DC Input Levels Applicable to Commercial and Industrial Conditions DC I/O Standards Commercial1 Industrial2 IIL 3 IIH 4 IIL 3 IIH 4 µA µA µA µA 3.3 V LVTTL / 3.3 V LVCMOS 10 10 15 15

3.3 V LVCOMS Wide Range 10 10 15 15

2.5 V LVCMOS 10 10 15 15

1.8 V LVCMOS 10 10 15 15

1.5 V LVCMOS 10 10 15 15

1.2 V LVCMOS Wide Range5 10 10 15 15

Notes: 1. Commercial range (–20°C < T A < 70°C) 2. Industrial range (–40°C < T A < 85°C) 3. I IH is the input leakage current per I/O pin over recommended operating conditions, where VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 4. I IL is the input leakage current per I/O pin over recommended operating conditions, where –0.3 V < VIN < VIL. 5. Applicable to IGLOO nano V2 devices operating at VCCI VCC.

IGLOO nano DC and Switching Characteristics Summary of I/O Timing Characteristics – Default I/O Software Settings Table 2-23 • Summary of AC Measuring Points Standard Measuring Trip Point (Vtrip) 3.3 V LVTTL / 3.3 V LVCMOS 1.4 V 3.3 V LVCMOS Wide Range 1.4 V 2.5 V LVCMOS 1.2 V 1.8 V LVCMOS 0.90 V 1.5 V LVCMOS 0.75 V 1.2 V LVCMOS 0.60 V 1.2 V LVCMOS Wide Range 0.60 V Table 2-24 • I/O AC Parameter Definitions Parameter Parameter Definition t DP Data to Pad delay through the Output Buffer tPY Pad to Data delay through the Input Buffer tDOUT Data to Output Buffer delay through the I/O interface tEOUT Enable to Output Buffer Tristate Control delay through the I/O interface tDIN Input Buffer to Data delay through the I/O interface tHZ Enable to Pad delay through the Output Buffer—HIGH to Z tZH Enable to Pad delay through the Output Buffer—Z to HIGH tLZ Enable to Pad delay through the Output Buffer—LOW to Z tZL Enable to Pad delay through the Output Buffer—Z to LOW tZHS Enable to Pad delay through the Output Buffer with delayed enable—Z to HIGH tZLS Enable to Pad delay through the Output Buffer with delayed enable—Z to LOW

IGLOO nano Low Power Flash FPGAs Revision 17 2-21 Applies to IGLOO nano at 1.5 V Core Operating Conditions Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings STD Speed Grade, Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V I/O Standard Drive Strength (mA) Equivalent Software Default t Drive Strength Option1 Slew Rate Capacitive Load (pF) tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range, as specified in the JESD8-B specification. 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Applies to IGLOO nano at 1.2 V Core Operating Conditions Table 2-26 • Summary of I/O Timing Characteristics—Software Default Settings STD Speed Grade, Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V I/O Standard Drive Strength (mA) Equiv. Software Default Drive Strength Option1 Slew Rate Capacitive Load (pF) tDOUT tDP tDIN tPY) tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.. 2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range, as specified in the JESD8-B specification. 3. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V side range as specified in the JESD8-12 specification. 4. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-23 Detailed I/O DC Characteristics Table 2-27 • Input Capacitance Symbol Definition Conditions Min. Max. Units CIN Input capacitance VIN = 0, f = 1.0 MHz 8 pF CINCLK Input capacitance on the clock pin VIN = 0, f = 1.0 MHz 8 pF Table 2-28 • I/O Output Buffer Maximum Resistances 1 Standard Drive Strength RPULL-DOWN ()2 RPULL-UP ()3 3.3 V LVTTL / 3.3V LVCMOS 2 mA 100 300 4 mA 100 300 6 mA 50 150 8 mA 50 150

3.3 V LVCMOS Wide Range 100 µA Same as equivalent software default drive

2.5 V LVCMOS 2 mA 100 200

1.8 V LVCMOS 2 mA 200 225

1.5 V LVCMOS 2 mA 200 224

1.2 V LVCMOS Wide Range4 100 µA 315 315

Notes: 1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models posted at http://www.microsemi.com/soc/download/ibis/default.aspx. 2. R (PULL-DOWN-MAX) = (VOLspec) / IOLspec 3. R (PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec 4. Applicable to IGLOO nano V2 devices operating at VCCI  VCC.

IGLOO nano DC and Switching Characteristics Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values VCCI R(WEAK PULL-UP) 1 ()R (WEAK PULL-DOWN) 2 () Min. Max. Min. Max.

3.3 V 10 K 45 K 10 K 45 K

3.3 V (wide range I/Os) 10 K 45 K 10 K 45 K

2.5 V 11 K 55 K 12 K 74 K

1.8 V 18 K 70 K 17 K 110 K

1.5 V 19 K 90 K 19 K 140 K

1.2 V 25 K 110 K 25 K 150 K

1.2 V (wide range I/Os) 19 K 110 K 19 K 150 K

Notes: 1. R (WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN) 2. R (WEAK PULL-DOWN-MAX) = (VOLspec) / I(WEAK PULL-DOWN-MIN) Table 2-30 • I/O Short Currents IOSH/IOSL Drive Strength IOSL (mA)* IOSH (mA)* 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 25 27 4 mA 25 27 6 mA 51 54 8 mA 51 54

2.5 V LVCMOS 2 mA 16 18

1.8 V LVCMOS 2 mA 9 11

1.5 V LVCMOS 2 mA 13 16

1.2 V LVCMOS 1 mA 10 13

1.2 V LVCMOS Wide Range 100 µA 10 13

Note: *T J = 100°C

IGLOO nano Low Power Flash FPGAs Revision 17 2-25 The length of time an I/O can withstand IOSH/IOSL events depends on the junc tion temperature. The reliability data below is based on a 3.3 V, 8 mA I/O setting, which is the worst case for this type of analysis. For example, at 100°C, the short current condition would have to be sustained for more than six months to cause a reliability concern. The I/O design does not contain any short circuit protection, but such protection would only be needed in extremely prolonged stress conditions. Table 2-31 • Duration of Short Circuit Event before Failure Temperature Time before Failure –40°C > 20 years –20°C > 20 years 0°C > 20 years 25°C > 20 years 70°C 5 years 85°C 2 years 100°C 6 months Table 2-32 • Schmitt Trigger Input Hysteresis Hysteresis Voltage Value (Typ.) for Schmitt Mode Input Buffers Input Buffer Configuration Hysteresis Value (typ.)

3.3 V LVTTL / LVCMOS (Schmitt trigger mode) 240 mV

2.5 V LVCMOS (Schmitt trigger mode) 140 mV

1.8 V LVCMOS (Schmitt trigger mode) 80 mV

1.5 V LVCMOS (Schmitt trigger mode) 60 mV

1.2 V LVCMOS (Schmitt trigger mode) 40 mV

Table 2-33 • I/O Input Rise Time, Fall Time, and Related I/O Reliability Input Buffer Input Rise/Fall Time (min.) Input Rise/Fall Time (max.) Reliability LVTTL/LVCMOS (Schmitt trigger disabled) No requirement 10 ns * 20 years (100°C) LVTTL/LVCMOS (Schmitt trigger enabled) No requirement No requirement, but input noise voltage cannot exceed Schmitt hysteresis. 20 years (100°C) Note: *The maximum input rise/fall time is related to the noise induced into the input buffer trace. If the noise is low, then the rise time and fall time of input buffers can be increased beyond the maximum value. The longer the rise/fall times, the more susceptible the input signal is to the board noise. Microsemi recommends signal integrity evaluation/characterization of the system to ensure that there is no excessive noise coupling into input signals.

IGLOO nano DC and Switching Characteristics Single-Ended I/O Characteristics 3.3 V LVTTL / 3.3 V LVCMOS Low-Voltage Transistor–Transistor Logic (LVTTL) is a general purpose standard (EIA/JESD) for 3.3 V applications. It uses an LVTTL input buffer and push-pull output buffer. Table 2-34 • Minimum and Maximum DC Input and Output Levels

3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH 2

Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA Max. mA3 µA4 µA4 Notes: 1. I IL is the input leakage current per I/O pin over recommended operating conditions where –0.3 < VIN < VIL. 2. I IH is the input leakage current per I/O pin over recommended operating conditions where VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100 °C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-7 • AC Loading Table 2-35 • 3.3 V LVTTL/LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 03 . 3 1 . 4 5 Note: *Measuring point = Vtrip. See Table 2-23 on page 2-20 for a complete table of trip points. Test Point Test Point Enable PathDatapath 5 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 5 pF for tZH / tZHS / tZL / tZLS 5 pF for tHZ / tLZ

IGLOO nano Low Power Flash FPGAs Revision 17 2-27 Timing Characteristics Applies to 1.5 V DC Core Voltage Table 2-36 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-37 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: T J = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Applies to 1.2 V DC Core Voltage Table 2-38 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-39 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-29 Table 2-40 • Minimum and Maximum DC Input and Output Levels for LVCMOS 3.3 V Wide Range VIL VIH VOL VOH IOL I OH IIL 2 IIH 3 Drive Strength Min. V Max. V Min. V Max. V Max. V Min. Vµ A µ A µ A 5 µA5 Notes: 1. All LVCMOS 3.3 V software macros support LVCMOS 3. 3 V Wide Range, as specified in the JEDEC JESD8-B specification. 2. I IL is the input leakage current per I/O pin over recommended operating conditions where –0.3 < VIN < VIL. 3. I IH is the input leakage current per I/O pin over recommended operating conditions where VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 4. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 5. Currents are measured at 85°C junction temperature. 6. Software default selection is highlighted in gray.

IGLOO nano DC and Switching Characteristics Timing Characteristics Applies to 1.5 V DC Core Voltage Table 2-41 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V Drive Strength Equivalent Software Default Drive Strength Option Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-42 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V Drive Strength Equivalent Software Default Drive Strength Option Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. 3. Software default selection highlighted in gray.

IGLOO nano Low Power Flash FPGAs Revision 17 2-31 Applies to 1.2 V DC Core Voltage Table 2-43 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7 V Drive Strength Equivalent Software Default Drive Strength Option1 Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-44 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7 V Drive Strength Equivalent Software Default Drive Strength Option Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. 3. Software default selection highlighted in gray.

IGLOO nano DC and Switching Characteristics

2.5 V LVCMOS

Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for general purpose 2.5 V applications. Table 2-45 • Minimum and Maximum DC Input and Output Levels 2.5 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH 2 Drive 3 Max., mA3 µA4 µA4 Notes: 1. I IL is the input leakage current per I/O pin over recommended operating conditions where –0.3 < VIN < VIL. 2. I IH is the input leakage current per I/O pin over recommended operating conditions where VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100 °C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-8 • AC Loading Table 2-46 • 2.5 V LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 02 . 5 1 . 2 5 Note: *Measuring point = Vtrip. See Table 2-23 on page 2-20 for a complete table of trip points. Test Point Test Point Enable PathDatapath 5 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 5 pF for tZH / tZHS / tZL / tZLS 5 pF for tHZ / tLZ

IGLOO nano Low Power Flash FPGAs Revision 17 2-33 Timing Characteristics Applies to 1.5 V DC Core Voltage Table 2-47 • 2.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-48 • 2.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: T J = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Applies to 1.2 V DC Core Voltage Table 2-49 • 2.5 LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-50 • 2.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-35

1.8 V LVCMOS

Low-voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for general purpose 1.8 V applications. It uses a 1.8 V input buffer and a push-pull output buffer. Table 2-51 • Minimum and Maximum DC Input and Output Levels 1.8 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH 2 Drive Strength Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA Max. mA3 µA4 µA4 Notes: 1. I IL is the input leakage current per I/O pin over recommended operating conditions where –0.3 < VIN < VIL. 2. I IH is the input leakage current per I/O pin over recommended operating conditions where VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100 °C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-9 • AC Loading Table 2-52 • 1.8 V LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 01 . 8 0 . 9 5 Note: *Measuring point = Vtrip. See Table 2-23 on page 2-20 for a complete table of trip points. Test Point Test Point Enable PathDatapath 5 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 5 pF for tZH / tZHS / tZL / tZLS 5 pF for tHZ / tLZ

IGLOO nano DC and Switching Characteristics Timing Characteristics Applies to 1.5 V DC Core Voltage Applies to 1.2 V DC Core Voltage Table 2-53 • 1.8 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Drive Strength Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-54 • 1.8 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: T J = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-55 • 1.8 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-56 • 1.8 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: T J = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-37

1.5 V LVCMOS (JESD8-11)

Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for general purpose 1.5 V applications. It uses a 1.5 V input buffer and a push-pull output buffer. Table 2-57 • Minimum and Maximum DC Input and Output Levels 1.5 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH 2 Drive Strength Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA Max. mA3 µA4 µA4 Notes: 1. I IL is the input leakage current per I/O pin over recommended operating conditions where –0.3 < VIN < VIL. 2. IIH is the input leakage current per I/O pin over re commended operating conditions where VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100 °C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-10 • AC Loading Table 2-58 • 1.5 V LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 01 . 5 0 . 7 5 5 Note: *Measuring point = Vtrip. See Table 2-23 on page 2-20 for a complete table of trip points. Test Point Test Point Enable PathDatapath 5 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 5 pF for tZH / tZHS / tZL / tZLS 5 pF for tHZ / tLZ

IGLOO nano DC and Switching Characteristics Timing Characteristics Applies to 1.5 V DC Core Voltage Applies to 1.2 V DC Core Voltage Table 2-59 • 1.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-60 • 1.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-61 • 1.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-62 • 1.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-39

1.2 V LVCMOS (JESD8-12A)

Low-Voltage CMOS for 1.2 V complies with the LVCMOS standard JESD8-12A for general purpose 1.2 V applications. It uses a 1.2 V input buffer and a push-pull output buffer. Timing Characteristics Applies to 1.2 V DC Core Voltage Table 2-63 • Minimum and Maximum DC Input and Output Levels 1.2 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL 1 IIH 2 Drive Strength Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA Max. mA3 µA4 µA4 Notes: 1. I IL is the input leakage current per I/O pin over recommended operating conditions where –0.3 < VIN < VIL. 2. I IH is the input leakage current per I/O pin over recommended operating conditions where VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100 °C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-11 • AC Loading Table 2-64 • 1.2 V LVCMOS AC Waveforms, Measuring Points, and Capacitive Loads Input LOW (V) Input HIGH (V) Measuring Point* (V) C LOAD (pF) 01 . 2 0 . 6 5 Note: *Measuring point = Vtrip. See Table 2-23 on page 2-20 for a complete table of trip points. Test Point Test Point Enable PathDatapath 5 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 5 pF for tZH / tZHS / tZL / tZLS 5 pF for tHZ / tLZ Table 2-65 • 1.2 V LVCMOS Low Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-66 • 1.2 V LVCMOS High Slew Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V Drive Strength Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics

1.2 V LVCMOS Wide Range

Applies to 1.2 V DC Core Voltage Table 2-67 • Minimum and Maximum DC Input and Output Levels 1.2 V LVCMOS Wide Range VIL VIH VOL VOH IOL IOH IOSL IOSH IIL

1 IIH 2

Min. V Max. V Min. V Max. V Max. V Min. Vm A m A Max. mA Max. mA3 µA4 µA4 Notes: 1. I IL is the input leakage current per I/O pin over recommended operating conditions where –0.3 < VIN < VIL. 2. I IH is the input leakage current per I/O pin over recommended operating conditions where VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100 °C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Applicable to IGLOO nano V2 devices operating at VCCI VCC. 6. Software default selection highlighted in gray. Table 2-68 • 1.2 V LVCMOS Wide Range Low Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V Drive Strength Equivalent Software Default Drive Strength Option Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 1.2 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-69 • 1.2 V LVCMOS Wide Range HIgh Slew – Applies to 1.2 V DC Core Voltage Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V Drive Strength Equivalent Software Default Drive Strength Option Speed Grade t DOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Notes: 1. The minimum drive strength for any LVCMOS 1.2 V software configuration when run in wide range is ±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. 3. Software default selection highlighted in gray.

IGLOO nano Low Power Flash FPGAs Revision 17 2-41 I/O Register Specifications Fully Registered I/O Buffers with Asynchronous Preset Figure 2-12 • Timing Model of Registered I/O Buffers with Asynchronous Preset INBUF INBUF TRIBUF CLKBUF INBUFCLKBUF Data Input I/O Register with: Active High Preset Positive-Edge Triggered Data Output Register and Enable Output Register with: Active High Preset Postive-Edge Triggered Pad Out CLK Preset Data_out Data EOUT DOUT CLK DQ DFN1P1 PRE DQ DFN1P1 PRE DQ DFN1P1 PRE D_Enable A C D E F H I J L Y Core Array

IGLOO nano DC and Switching Characteristics Table 2-70 • Parameter Definition and Measuring Nodes Parameter Name Parameter Definition Measuring Nodes (from, to)* tOCLKQ Clock-to-Q of the Output Data Register H, DOUT tOSUD Data Setup Time for the Output Data Register F, H tOHD Data Hold Time for the Output Data Register F, H tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register L, DOUT tOREMPRE Asynchronous Preset Removal Time for the Output Data Register L, H tORECPRE Asynchronous Preset Recovery Time for the Output Data Register L, H tOECLKQ Clock-to-Q of the Output Enable Register H, EOUT tOESUD Data Setup Time for the Output Enable Register J, H tOEHD Data Hold Time for the Output Enable Register J, H tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register I, EOUT tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register I, H tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register I, H tICLKQ Clock-to-Q of the Input Data Register A, E tISUD Data Setup Time for the Input Data Register C, A tIHD Data Hold Time for the Input Data Register C, A tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register D, E tIREMPRE Asynchronous Preset Removal Time for the Input Data Register D, A tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register D, A Note: *See Figure 2-12 on page 2-41 for more information.

IGLOO nano Low Power Flash FPGAs Revision 17 2-43 Fully Registered I/O Buffers with Asynchronous Clear Figure 2-13 • Timing Model of the Registered I/O Buffers with Asynchronous Clear CLK Pad Out CLK CLR Data_out Data Y AA EOUT DOUT Core ArrayDQ DFN1C1 CLR DQ DFN1C1 CLR DQ DFN1C1 CLR D_Enable CC DD EE FF LL HH JJ CLKBUF INBUF TRIBUF INBUF CLKBUF INBUF Data Input I/O Register with Active High Clear Positive-Edge Triggered Data Output Register and Enable Output Register with Active High Clear Positive-Edge Triggered

IGLOO nano DC and Switching Characteristics Table 2-71 • Parameter Definition and Measuring Nodes Parameter Name Parameter Definition Measuring Nodes (from, to)* tOCLKQ Clock-to-Q of the Output Data Register HH, DOUT tOSUD Data Setup Time for the Output Data Register FF, HH tOHD Data Hold Time for the Output Data Register FF, HH tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register LL, DOUT tOREMCLR Asynchronous Clear Removal Time for the Output Data Register LL, HH tORECCLR Asynchronous Clear Recovery Time for the Output Data Register LL, HH tOECLKQ Clock-to-Q of the Output Enable Register HH, EOUT tOESUD Data Setup Time for the Output Enable Register JJ, HH tOEHD Data Hold Time for the Output Enable Register JJ, HH tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register II, EOUT tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register II, HH tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register II, HH tICLKQ Clock-to-Q of the Input Data Register AA, EE tISUD Data Setup Time for the Input Data Register CC, AA tIHD Data Hold Time for the Input Data Register CC, AA tICLR2Q Asynchronous Clear-to-Q of the Input Data Register DD, EE tIREMCLR Asynchronous Clear Removal Time for the Input Data Register DD, AA tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register DD, AA Note: *See Figure 2-13 on page 2-43 for more information.

IGLOO nano Low Power Flash FPGAs Revision 17 2-45 Input Register Timing Characteristics

1.5 V DC Core Voltage

Figure 2-14 • Input Register Timing Diagram 50%Clear Out_1 CLK Data Preset 50% tISUD tIHD 50% 50% tICLKQ 1 0 tIRECPRE tIREMPRE tIRECCLR tIREMCLRtIWCLR tIWPRE tIPRE2Q tICLR2Q tICKMPWH tICKMPWL 50% 50% 50% 50% 50% 50% 50% 50% Table 2-72 • Input Data Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tICLKQ Clock-to-Q of the Input Data Register 0.42 ns tISUD Data Setup Time for the Input Data Register 0.47 ns tIHD Data Hold Time for the Input Data Register 0.00 ns tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 0.79 ns tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 0.79 ns tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 ns tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.24 ns tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 ns tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.24 ns tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.19 ns tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.19 ns tICKMPWH Clock Minimum Pulse Width HIGH for the Input Data Register 0.31 ns tICKMPWL Clock Minimum Pulse Width LOW for the Input Data Register 0.28 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics

1.2 V DC Core Voltage

Table 2-73 • Input Data Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tICLKQ Clock-to-Q of the Input Data Register 0.68 ns tISUD Data Setup Time for the Input Data Register 0.97 ns tIHD Data Hold Time for the Input Data Register 0.00 ns tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 1.19 ns tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 1.19 ns tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 ns tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.24 ns tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 ns tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.24 ns tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.19 ns tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.19 ns tICKMPWH Clock Minimum Pulse Width HIGH for the Input Data Register 0.31 ns tICKMPWL Clock Minimum Pulse Width LOW for the Input Data Register 0.28 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-47 Output Register Timing Characteristics Figure 2-15 • Output Register Timing Diagram Clear DOUT CLK Data_out Preset 50% tOSUD tOHD 50% 50% tOCLKQ 1 0 tORECPRE tOREMPRE tORECCLR tOREMCLRtOWCLR tOWPRE tOPRE2Q tOCLR2Q tOCKMPWH tOCKMPWL 50% 50% 50% 50% 50% 50% 50% 50% 50% Table 2-74 • Output Data Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tOCLKQ Clock-to-Q of the Output Data Register 1.00 ns tOSUD Data Setup Time for the Output Data Register 0.51 ns tOHD Data Hold Time for the Output Data Register 0.00 ns tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register 1.34 ns tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register 1.34 ns tOREMCLR Asynchronous Clear Removal Time for the Output Data Register 0.00 ns tORECCLR Asynchronous Clear Recovery Time for the Output Data Register 0.24 ns tOREMPRE Asynchronous Preset Removal Time for the Output Data Register 0.00 ns tORECPRE Asynchronous Preset Recovery Time for the Output Data Register 0.24 ns tOWCLR Asynchronous Clear Minimum Pulse Width for the Output Data Register 0.19 ns tOWPRE Asynchronous Preset Minimum Pulse Width for the Output Data Register 0.19 ns tOCKMPWH Clock Minimum Pulse Width HIGH for the Output Data Register 0.31 ns tOCKMPWL Clock Minimum Pulse Width LOW for the Output Data Register 0.28 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-75 • Output Data Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tOCLKQ Clock-to-Q of the Output Data Register 1.52 ns tOSUD Data Setup Time for the Output Data Register 1.15 ns tOHD Data Hold Time for the Output Data Register 0.00 ns tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register 1.96 ns tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register 1.96 ns tOREMCLR Asynchronous Clear Removal Time for the Output Data Register 0.00 ns tORECCLR Asynchronous Clear Recovery Time for the Output Data Register 0.24 ns tOREMPRE Asynchronous Preset Removal Time for the Output Data Register 0.00 ns tORECPRE Asynchronous Preset Recovery Time for the Output Data Register 0.24 ns tOWCLR Asynchronous Clear Minimum Pulse Width for the Output Data Register 0.19 ns tOWPRE Asynchronous Preset Minimum Pulse Width for the Output Data Register 0.19 ns tOCKMPWH Clock Minimum Pulse Width HIGH for the Output Data Register 0.31 ns tOCKMPWL Clock Minimum Pulse Width LOW for the Output Data Register 0.28 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-49 Output Enable Register Timing Characteristics Figure 2-16 • Output Enable Register Timing Diagram 50% Preset Clear EOUT CLK D_Enable 50% tOESUDtOEHD 50% 50% tOECLKQ 1 0 tOERECPRE tOEREMPRE tOERECCLR tOEREMCLRtOEWCLR tOEWPRE tOEPRE2Q tOECLR2Q tOECKMPWH tOECKMPWL 50% 50% 50% 50% 50% 50% 50% 50% Table 2-76 • Output Enable Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tOECLKQ Clock-to-Q of the Output Enable Register 0.75 ns tOESUD Data Setup Time for the Output Enable Register 0.51 ns tOEHD Data Hold Time for the Output Enable Register 0.00 ns tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register 1.13 ns tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register 1.13 ns tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register 0.00 ns tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register 0.24 ns tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register 0.00 ns tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register 0.24 ns tOEWCLR Asynchronous Clear Minimum Pulse Width for the Output Enable Register 0.19 ns tOEWPRE Asynchronous Preset Minimum Pulse Width for the Output Enable Register 0.19 ns tOECKMPWH Clock Minimum Pulse Width HIGH for the Output Enable Register 0.31 ns tOECKMPWL Clock Minimum Pulse Width LOW for the Output Enable Register 0.28 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-77 • Output Enable Register Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tOECLKQ Clock-to-Q of the Output Enable Register 1.10 ns tOESUD Data Setup Time for the Output Enable Register 1.15 ns tOEHD Data Hold Time for the Output Enable Register 0.00 ns tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register 1.65 ns tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register 1.65 ns tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register 0.00 ns tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register 0.24 ns tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register 0.00 ns tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register 0.24 ns tOEWCLR Asynchronous Clear Minimum Pulse Width for the Output Enable Register 0.19 ns tOEWPRE Asynchronous Preset Minimum Pulse Width for the Output Enable Register 0.19 ns tOECKMPWH Clock Minimum Pulse Width HIGH for the Output Enable Register 0.31 ns tOECKMPWL Clock Minimum Pulse Width LOW for the Output Enable Register 0.28 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-51 DDR Module Specifications Note: DDR is not supported for AGLN010, AGLN015, and AGLN020 devices. Input DDR Module Figure 2-17 • Input DDR Timing Model Table 2-78 • Parameter Definitions Parameter Name Parameter Definition Measuring Nodes (from, to) tDDRICLKQ1 Clock-to-Out Out_QR B, D tDDRICLKQ2 Clock-to-Out Out_QF B, E tDDRISUD Data Setup Time of DDR input A, B tDDRIHD Data Hold Time of DDR input A, B tDDRICLR2Q1 Clear-to-Out Out_QR C, D tDDRICLR2Q2 Clear-to-Out Out_QF C, E tDDRIREMCLR Clear Removal C, B tDDRIRECCLR Clear Recovery C, B Input DDR Data CLK CLKBUF INBUF Out_QF (to core) FF2 FF1 INBUF CLR DDR_IN E A B C D Out_QR (to core)

IGLOO nano DC and Switching Characteristics Timing Characteristics Figure 2-18 • Input DDR Timing Diagram tDDRICLR2Q2 tDDRIREMCLR tDDRIRECCLR tDDRICLR2Q1 12 3 4 5 6 7 8 9 CLK Data CLR Out_QR Out_QF tDDRICLKQ1 2 4 6 3 5 7 tDDRIHDtDDRISUD tDDRICLKQ2 Table 2-79 • Input DDR Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.25 V Parameter Description Std. Units tDDRICLKQ1 Clock-to-Out Out_QR for Input DDR 0.48 ns tDDRICLKQ2 Clock-to-Out Out_QF for Input DDR 0.65 ns tDDRISUD1 Data Setup for Input DDR (negedge) 0.50 ns tDDRISUD2 Data Setup for Input DDR (posedge) 0.40 ns tDDRIHD1 Data Hold for Input DDR (negedge) 0.00 ns tDDRIHD2 Data Hold for Input DDR (posedge) 0.00 ns tDDRICLR2Q1 Asynchronous Clear-to-Out Out_QR for Input DDR 0.82 ns tDDRICLR2Q2 Asynchronous Clear-to-Out Out_QF for Input DDR 0.98 ns tDDRIREMCLR Asynchronous Clear Removal Time for Input DDR 0.00 ns tDDRIRECCLR Asynchronous Clear Recovery Time for Input DDR 0.23 ns tDDRIWCLR Asynchronous Clear Minimum Pulse Width for Input DDR 0.19 ns tDDRICKMPWH Clock Minimum Pulse Width HIGH for Input DDR 0.31 ns tDDRICKMPWL Clock Minimum Pulse Width LOW for Input DDR 0.28 ns FDDRIMAX Maximum Frequency for Input DDR 250.00 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-53 Table 2-80 • Input DDR Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tDDRICLKQ1 Clock-to-Out Out_QR for Input DDR 0.76 ns tDDRICLKQ2 Clock-to-Out Out_QF for Input DDR 0.94 ns tDDRISUD1 Data Setup for Input DDR (negedge) 0.93 ns tDDRISUD2 Data Setup for Input DDR (posedge) 0.84 ns tDDRIHD1 Data Hold for Input DDR (negedge) 0.00 ns tDDRIHD2 Data Hold for Input DDR (posedge) 0.00 ns tDDRICLR2Q1 Asynchronous Clear-to-Out Out_QR for Input DDR 1.23 ns tDDRICLR2Q2 Asynchronous Clear-to-Out Out_QF for Input DDR 1.42 ns tDDRIREMCLR Asynchronous Clear Removal Time for Input DDR 0.00 ns tDDRIRECCLR Asynchronous Clear Recovery Time for Input DDR 0.24 ns tDDRIWCLR Asynchronous Clear Minimum Pulse Width for Input DDR 0.19 ns tDDRICKMPWH Clock Minimum Pulse Width HIGH for Input DDR 0.31 ns tDDRICKMPWL Clock Minimum Pulse Width LOW for Input DDR 0.28 ns FDDRIMAX Maximum Frequency for Input DDR 160.00 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano DC and Switching Characteristics Output DDR Module Figure 2-19 • Output DDR Timing Model Table 2-81 • Parameter Definitions Parameter Name Parameter Defini tion Measuring No des (from, to) tDDROCLKQ Clock-to-Out B, E tDDROCLR2Q Asynchronous Clear-to-Out C, E tDDROREMCLR Clear Removal C, B tDDRORECCLR Clear Recovery C, B tDDROSUD1 Data Setup Data_F A, B tDDROSUD2 Data Setup Data_R D, B tDDROHD1 Data Hold Data_F A, B tDDROHD2 Data Hold Data_R D, B Data_F (from core) CLK CLKBUF Out FF2 INBUF CLR DDR_OUT Output DDR FF1 X X X X X X X A B D EC C B OUTBUFData_R (from core)

IGLOO nano Low Power Flash FPGAs Revision 17 2-55 Timing Characteristics Figure 2-20 • Output DDR Timing Diagram 116 91 0 28 3 9 tDDROREMCLR tDDROHD1tDDROREMCLR tDDROHD2tDDROSUD2 tDDROCLKQ tDDRORECCLR CLK Data_R Data_F CLR Out tDDROCLR2Q 71 0 4 Table 2-82 • Output DDR Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tDDROCLKQ Clock-to-Out of DDR for Output DDR 1.07 ns tDDROSUD1 Data_F Data Setup for Output DDR 0.67 ns tDDROSUD2 Data_R Data Setup for Output DDR 0.67 ns tDDROHD1 Data_F Data Hold for Output DDR 0.00 ns tDDROHD2 Data_R Data Hold for Output DDR 0.00 ns tDDROCLR2Q Asynchronous Clear-to-Out for Output DDR 1.38 ns tDDROREMCLR Asynchronous Clear Removal Time for Output DDR 0.00 ns tDDRORECCLR Asynchronous Clear Recovery Time for Output DDR 0.23 ns tDDROWCLR1 Asynchronous Clear Minimum Pulse Width for Output DDR 0.19 ns tDDROCKMPWH Clock Minimum Pulse Width HIGH for the Output DDR 0.31 ns tDDROCKMPWL Clock Minimum Pulse Width LOW for the Output DDR 0.28 ns FDDOMAX Maximum Frequency for the Output DDR 250.00 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-83 • Output DDR Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tDDROCLKQ Clock-to-Out of DDR for Output DDR 1.60 ns tDDROSUD1 Data_F Data Setup for Output DDR 1.09 ns tDDROSUD2 Data_R Data Setup for Output DDR 1.16 ns tDDROHD1 Data_F Data Hold for Output DDR 0.00 ns tDDROHD2 Data_R Data Hold for Output DDR 0.00 ns tDDROCLR2Q Asynchronous Clear-to-Out for Output DDR 1.99 ns tDDROREMCLR Asynchronous Clear Removal Time for Output DDR 0.00 ns tDDRORECCLR Asynchronous Clear Recovery Time for Output DDR 0.24 ns tDDROWCLR1 Asynchronous Clear Minimum Pulse Width for Output DDR 0.19 ns tDDROCKMPWH Clock Minimum Pulse Width HIGH for the Output DDR 0.31 ns tDDROCKMPWL Clock Minimum Pulse Width LOW for the Output DDR 0.28 ns FDDOMAX Maximum Frequency for the Output DDR 160.00 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-57 VersaTile Characteristics VersaTile Specifications as a Combinatorial Module The IGLOO nano library offers all co mbinations of LUT-3 combinatorial functions. In this section, timing characteristics are presented for a sample of the library. For more details, refer to the Fusion, IGLOO/e, and ProASIC3/ E Macro Library Guide. Figure 2-21 • Sample of Combinatorial Cells MAJ3 A C BY MUX2 B A S Y AY B B A XOR2 Y NOR2 B A Y B A YOR2 INV A YAND2 B A Y NAND3B A C XOR3 YB A C NAND2

IGLOO nano DC and Switching Characteristics Figure 2-22 • Timing Model and Waveforms Net A Y B Length = 1 VersaTile Net A Y B Length = 1 VersaTile Net A Y B Length = 1 VersaTile Net A Y B Length = 1 VersaTile NAND2 or Any Combinatorial Logic NAND2 or Any Combinatorial Logic NAND2 or Any Combinatorial Logic NAND2 or Any Combinatorial Logic tPD = MAX(tPD(RR), tPD(RF), tPD(FF), tPD(FR)) where edges are applicable for a particular combinatorial cell Fanout = 4 t PD tPD tPD 50% VCC VCC VCC 50% GNDA, B, C 50% 50% 50% (RR) (RF) GND OUT OUT GND 50% (FF) (FR) tPD tPD

IGLOO nano Low Power Flash FPGAs Revision 17 2-59 Timing Characteristics Table 2-84 • Combinatorial Cell Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Combinatorial Cell Equation Parameter Std. Units INV Y = !A t PD 0.76 ns AND2 Y = A · B t PD 0.87 ns NAND2 Y = !(A · B) t PD 0.91 ns OR2 Y = A + B t PD 0.90 ns NOR2 Y = !(A + B) t PD 0.94 ns XOR2 Y = A Bt PD 1.39 ns MAJ3 Y = MAJ(A, B, C) t PD 1.44 ns XOR3 Y = A  B Ct PD 1.60 ns MUX2 Y = A !S + B S t PD 1.17 ns AND3 Y = A · B · C t PD 1.18 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-85 • Combinatorial Cell Propagation Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Combinatorial Cell Equation Parameter Std. Units INV Y = !A t PD 1.33 ns AND2 Y = A · B t PD 1.48 ns NAND2 Y = !(A · B) t PD 1.58 ns OR2 Y = A + B t PD 1.53 ns NOR2 Y = !(A + B) t PD 1.63 ns XOR2 Y = A Bt PD 2.34 ns MAJ3 Y = MAJ(A, B, C) t PD 2.59 ns XOR3 Y = A  B Ct PD 2.74 ns MUX2 Y = A !S + B S t PD 2.03 ns AND3 Y = A · B · C t PD 2.11 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano DC and Switching Characteristics VersaTile Specifications as a Sequential Module The IGLOO nano library offers a wide variety of sequen tial cells, including flip-flops and latches. Each has a data input and optional enable, clear, or preset. In this section, timing characteristics are presented for a representative sample from the library. For more details, refer to the Fusion, IGLOO/e, and ProASIC3/E Macro Library Guide. Figure 2-23 • Sample of Sequential Cells DQ DFN1 Data CLK Out D Q DFN1C1 Data CLK Out CLR DQ DFI1E1P1 Data CLK Out En PRE D Q DFN1E1 Data CLK Out En

IGLOO nano Low Power Flash FPGAs Revision 17 2-61 Timing Characteristics Figure 2-24 • Timing Model and Waveforms PRE CLR Out CLK Data EN tSUE 50% 50% tSUD tHD 50% 50% tCLKQ tHE tRECPRE tREMPRE tRECCLR tREMCLRtWCLR tWPRE tPRE2Q tCLR2Q tCKMPWH tCKMPWL 50% 50% 50% 50% 50% 50% 50% 50% 50% Table 2-86 • Register Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tCLKQ Clock-to-Q of the Core Register 0.89 ns tSUD Data Setup Time for the Core Register 0.81 ns tHD Data Hold Time for the Core Register 0.00 ns tSUE Enable Setup Time for the Core Register 0.73 ns tHE Enable Hold Time for the Core Register 0.00 ns tCLR2Q Asynchronous Clear-to-Q of the Core Register 0.60 ns tPRE2Q Asynchronous Preset-to-Q of the Core Register 0.62 ns tREMCLR Asynchronous Clear Removal Time for the Core Register 0.00 ns tRECCLR Asynchronous Clear Recovery Time for the Core Register 0.24 ns tREMPRE Asynchronous Preset Removal Time for the Core Register 0.00 ns tRECPRE Asynchronous Preset Recovery Time for the Core Register 0.23 ns tWCLR Asynchronous Clear Minimum Pulse Width for the Core Register 0.30 ns tWPRE Asynchronous Preset Minimum Pulse Width for the Core Register 0.30 ns tCKMPWH Clock Minimum Pulse Width HIGH for the Core Register 0.56 ns tCKMPWL Clock Minimum Pulse Width LOW for the Core Register 0.56 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-87 • Register Delays Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tCLKQ Clock-to-Q of the Core Register 1.61 ns tSUD Data Setup Time for the Core Register 1.17 ns tHD Data Hold Time for the Core Register 0.00 ns tSUE Enable Setup Time for the Core Register 1.29 ns tHE Enable Hold Time for the Core Register 0.00 ns tCLR2Q Asynchronous Clear-to-Q of the Core Register 0.87 ns tPRE2Q Asynchronous Preset-to-Q of the Core Register 0.89 ns tREMCLR Asynchronous Clear Removal Time for the Core Register 0.00 ns tRECCLR Asynchronous Clear Recovery Time for the Core Register 0.24 ns tREMPRE Asynchronous Preset Removal Time for the Core Register 0.00 ns tRECPRE Asynchronous Preset Recovery Time for the Core Register 0.24 ns tWCLR Asynchronous Clear Minimum Pulse Width for the Core Register 0.46 ns tWPRE Asynchronous Preset Minimum Pulse Width for the Core Register 0.46 ns tCKMPWH Clock Minimum Pulse Width HIGH for the Core Register 0.95 ns tCKMPWL Clock Minimum Pulse Width LOW for the Core Register 0.95 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-63 Global Resource Characteristics AGLN125 Clock Tree Topology Clock delays are device-specific. Figure 2-25 is an example of a global tree used for clock routing. The global tree presented in Figure 2-25 is driven by a CCC located on the west side of the AGLN125 device. It is used to drive all D-flip-flops in the device. Figure 2-25 • Example of Global Tree Use in an AGLN125 Device for Clock Routing Central Global Rib VersaTile Rows Global Spine CCC

IGLOO nano DC and Switching Characteristics Global Tree Timing Characteristics Global clock delays include the central rib delay, the spine delay, and the row delay. Delays do not include I/O input buffer clock delays, as these are I/O standard–dependent, and the clock may be driven and conditioned internally by the CCC module. For more details on clock conditioning capabilities, refer to the "Clock Conditioning Circuits" section on page 2-70. Table 2-88 to Table 2-96 on page 2-68 present minimum and maximum global clock delays within each device. Minimum and maximum delays are measured with minimum and maximum loading. Timing Characteristics Table 2-88 • AGLN010 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.13 1.42 ns tRCKH Input High Delay for Global Clock 1.15 1.50 ns tRCKMPWH Minimum Pulse Width HIGH for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.35 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-89 • AGLN015 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.21 1.55 ns tRCKH Input HIgh Delay for Global Clock 1.23 1.65 ns tRCKMPWH Minimum Pulse Width HIGH for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.42 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-65 Table 2-90 • AGLN020 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.21 1.55 ns tRCKH Input High Delay for Global Clock 1.23 1.65 ns tRCKMPWH Minimum Pulse Width High for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.42 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-91 • AGLN060 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.32 1.62 ns tRCKH Input High Delay for Global Clock 1.34 1.71 ns tRCKMPWH Minimum Pulse Width HIGH for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.38 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-92 • AGLN125 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.36 1.71 ns tRCKH Input High Delay for Global Clock 1.39 1.82 ns tRCKMPWH Minimum Pulse Width High for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.43 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-93 • AGLN250 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.39 1.73 ns tRCKH Input High Delay for Global Clock 1.41 1.84 ns tRCKMPWH Minimum Pulse Width High for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.43 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-67 Table 2-94 • AGLN010 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.71 2.09 ns tRCKH Input High Delay for Global Clock 1.78 2.31 ns tRCKMPWH Minimum Pulse Width High for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.53 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values. Table 2-95 • AGLN015 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.81 2.26 ns tRCKH Input High Delay for Global Clock 1.90 2.51 ns tRCKMPWH Minimum Pulse Width High for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.61 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-96 • AGLN020 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 1.81 2.26 ns tRCKH Input High Delay for Global Clock 1.90 2.51 ns tRCKMPWH Minimum Pulse Width High for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.61 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values. Table 2-97 • AGLN060 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 2.02 2.42 ns tRCKH Input High Delay for Global Clock 2.09 2.65 ns tRCKMPWH Minimum Pulse Width High for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.56 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-69 Table 2-98 • AGLN125 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 2.08 2.54 ns tRCKH Input High Delay for Global Clock 2.15 2.77 ns tRCKMPWH Minimum Pulse Width HIGH for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width LOW for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.62 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values. Table 2-99 • AGLN250 Global Resource Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V Parameter Description Std. UnitsMin.1 Max.2 tRCKL Input Low Delay for Global Clock 2.11 2.57 ns tRCKH Input High Delay for Global Clock 2.19 2.81 ns tRCKMPWH Minimum Pulse Width High for Global Clock 1.40 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 1.65 ns tRCKSW Maximum Skew for Global Clock 0.62 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano DC and Switching Characteristics Clock Conditioning Circuits Timing Characteristics Table 2-100 • IGLOO nano CCC/PLL Specification For IGLOO nano V2 OR V5 Devices, 1.5 V DC Core Supply Voltage Parameter Min. Typ. Max. Units Clock Conditioning Circuitry Input Frequency f IN_CCC 1.5 250 MHz Clock Conditioning Circuitry Output Frequency fOUT_CCC 0.75 250 MHz Delay Increments in Programmable Delay Blocks 1, 2 360 3 ps Number of Programmable Values in Each Programmable Delay Block 32 Serial Clock (SCLK) for Dynamic PLL 4,9 100 MHz Input Cycle-to-Cycle Jitter (peak magnitude) 1 ns Acquisition Time LockControl = 0 300 µs LockControl = 1 6.0 ms Tracking Jitter LockControl = 0 2.5 ns LockControl = 1 1.5 ns Output Duty Cycle 48.5 51.5 % Delay Range in Block: Programmable Delay 1 1, 2 1.25 15.65 ns Delay Range in Block: Programmable Delay 2 1, 2, 0.025 15.65 ns Delay Range in Block: Fixed Delay 1, 2 3.5 ns VCO Output Peak-to-Peak Period Jitter FCCC_OUT

6 Max Peak-to-Peak Jitter Data 6,7,8

SSO  2 SSO  4 SSO  8S S O  16 50 MHz to 250 MHz 2.50 4.00 6.00 12.00 % Notes: 1. This delay is a function of voltage and temperature. See Table 2-6 on page 2-6 and Table 2-7 on page 2-7 for deratings. 2. T J = 25°C, VCC = 1.5 V 3. When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay increments are available. Refer to the Libero SoC Online Help associated with the core for more information. 4. Maximum value obtained for a STD speed grade device in Worst-Case Commercial conditions. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 and Table 2-7 on page 2-7 for derating values. 5. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to PLL input clock edge. Tracking jitter does not measure the variation in PLL output period, which is covered by the period jitter parameter. 6. VCO output jitter is calculated as a percentage of the VCO frequency. The jitter (in ps) can be calculated by multiplying the VCO period by the % jitter. The VCO jitter (in ps) applies to CCC_OUT, regardless of the output divider settings. For example, if the jitter on VCO is 300 ps, the jitter on CCC_OUT is also 300 ps, no matter what the settings are for the output divider. 7. Measurements done with LVTTL 3.3 V 8 mA I/O drive strength and high slew rate. VCC/VCCPLL = 1.425 V, VCCI = 3.3 V, VQ/PQ/TQ type of packages, 20 pF load. 8. SSOs are outputs that are synchronous to a single clock domain and have their clock-to-out times within ±200 ps of each other. Switching I/Os are placed outside of the PLL bank. Refer to the "Simultaneously Switching Outputs (SSOs) and Printed Circuit Board Layout" section in the IGLOO nano FPGA Fabric User’s Guide. 9. The AGLN010, AGLN015, and AGLN 020 devices do not support PLLs.

IGLOO nano Low Power Flash FPGAs Revision 17 2-71 Table 2-101 • IGLOO nano CCC/PLL Specification For IGLOO nano V2 Devices, 1.2 V DC Core Supply Voltage Parameter Min. Typ. Max. Units Clock Conditioning Circuitry Input Frequency fIN_CCC 1.5 160 MHz Clock Conditioning Circuitry Output Frequency fOUT_CCC 0.75 160 MHz Delay Increments in Programmable Delay Blocks 1, 2 580 3 ps Number of Programmable Values in Each Programmable Delay Block 32 Serial Clock (SCLK) for Dynamic PLL 4,9 60 Input Cycle-to-Cycle Jitter (peak magnitude) 0.25 ns Acquisition Time LockControl = 0 300 µs LockControl = 1 6.0 ms Tracking Jitter LockControl = 0 4 ns LockControl = 1 3 ns Output Duty Cycle 48.5 51.5 % Delay Range in Block: Programmable Delay 1 1, 2 2.3 20.86 ns Delay Range in Block: Programmable Delay 2 1, 2 0.025 20.86 ns Delay Range in Block: Fixed Delay 1, 2 5.7 ns VCO Output Peak-to-Peak Period Jitter FCCC_OUT

6 Max Peak-to-Peak Period Jitter 6,7,8

SSO  2S S O  4 SSO  8S S O  16 50 MHz to 100 MHz 2.50 5.00 7.00 15.00 % Notes: 1. This delay is a function of voltage and temperature. See Table 2-6 on page 2-6 and Table 2-7 on page 2-7 for deratings. 2. T J = 25°C, VCC = 1.2 V. 3. When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay increments are available. Refer to the Libero SoC Online Help associated with the core for more information. 4. Maximum value obtained for a STD speed grade device in Worst-Case Commercial conditions. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 and Table 2-7 on page 2-7 for derating values. 5. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to the PLL input clock edge. Tracking jitter does not measure the variation in PLL output period, which is covered by the period jitter parameter. 6. VCO output jitter is calculated as a percentage of the VCO frequency. The jitter (in ps) can be calculated by multiplying the VCO period by the % jitter. The VCO jitter (in ps) applies to CCC_OUT, regardless of the output divider settings. For example, if the jitter on VCO is 300 ps, the jitter on CCC_OUT is also 300 ps, no matter what the settings are for the output divider. 7. Measurements done with LVTTL 3.3 V 8 mA I/O drive strength and high slew rate. VCC/VCCPLL = 1.14 V, VCCI = 3.3 V, VQ/PQ/TQ type of packages, 20 pF load. 8. SSOs are outputs that are synchronous to a single clock domain and have their clock-to-out times within ±200 ps of each other. Switching I/Os are placed outside of the PLL bank. Refer to the "Simultaneously Switching Outputs (SSOs) and Printed Circuit Board Layout" section in the IGLOO nano FPGA Fabric User’s Guide. 9. The AGLN010, AGLN015, and AGLN 020 devices do not support PLLs.

IGLOO nano DC and Switching Characteristics Note: Peak-to-peak jitter measurements are defined by Tpeak-to-peak = Tperiod_max – Tperiod_min. Figure 2-26 • Peak-to-Peak Jitter Definition Tperiod_max Tperiod_min Output Signal

IGLOO nano Low Power Flash FPGAs Revision 17 2-73 Embedded SRAM and FIFO Characteristics SRAM Figure 2-27 • RAM Models ADDRA11 DOUTA8 DOUTA7 DOUTA0 DOUTB8 DOUTB7 DOUTB0 ADDRA10 ADDRA0 DINA8 DINA7 DINA0 WIDTHA1 WIDTHA0 PIPEA WMODEA BLKA WENA CLKA ADDRB11 ADDRB10 ADDRB0 DINB8 DINB7 DINB0 WIDTHB1 WIDTHB0 PIPEB WMODEB BLKB WENB CLKB RAM4K9 RADDR8 RD17 RADDR7 RD16 RADDR0 RD0 WD17 WD16 WD0 WW1 WW0 RW1 RW0 PIPE REN RCLK RAM512X18 WADDR8 WADDR7 WADDR0 WEN WCLK RESETRESET

IGLOO nano DC and Switching Characteristics Figure 2-32 • RAM Reset. Applicable to Both RAM4K9 and RAM512x18. CLK RESET DOUT|RD Dn tCYC tCKH tCKL tRSTBQ Dm

IGLOO nano Low Power Flash FPGAs Revision 17 2-77 Timing Characteristics Table 2-102 • RAM4K9 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tAS Address setup time 0.69 ns tAH Address hold time 0.13 ns tENS REN, WEN setup time 0.68 ns tENH REN, WEN hold time 0.13 ns tBKS BLK setup time 1.37 ns tBKH BLK hold time 0.13 ns tDS Input data (DIN) setup time 0.59 ns tDH Input data (DIN) hold time 0.30 ns tCKQ1 Clock HIGH to new data valid on DOUT (output retained, WMODE = 0) 2.94 ns Clock HIGH to new data valid on DOUT (flow-through, WMODE = 1) 2.55 ns t CKQ2 Clock HIGH to new data valid on DOUT (pipelined) 1.51 ns tC2CWWL

1 Address collision clk-to-clk delay for reliable write after write on same address; applicable

0.23 ns tC2CRWH

1 Address collision clk-to-clk delay for reliabl e read access after write on same address;

applicable to opening edge 0.35 ns tC2CWRH

1 Address collision clk-to-clk delay for reliable write access after read on same address;

applicable to opening edge 0.41 ns tRSTBQ RESET Low to data out Low on DOUT (flow-through) 1.72 ns RESET Low to data out Low on DOUT (pipelined) 1.72 ns tREMRSTB RESET removal 0.51 ns tRECRSTB RESET recovery 2.68 ns tMPWRSTB RESET minimum pulse width 0.68 ns tCYC Clock cycle time 6.24 ns FMAX Maximum frequency 160 MHz Notes: 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash- Based cSoCs and FPGAs. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-103 • RAM512X18 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tAS Address setup time 0.69 ns tAH Address hold time 0.13 ns tENS REN, WEN setup time 0.61 ns tENH REN, WEN hold time 0.07 ns tDS Input data (WD) setup time 0.59 ns tDH Input data (WD) hold time 0.30 ns tCKQ1 Clock HIGH to new data valid on RD (output retained) 3.51 ns tCKQ2 Clock HIGH to new data valid on RD (pipelined) 1.43 ns tC2CRWH applicable to opening edge 0.35 ns tC2CWRH applicable to opening edge 0.42 ns tRSTBQ RESET Low to data out Low on RD (flow-through) 1.72 ns RESET Low to data out Low on RD (pipelined) 1.72 ns tREMRSTB RESET removal 0.51 0.51 tRECRSTB RESET recovery 2.68 ns tMPWRSTB RESET minimum pulse width 0.68 ns tCYC Clock cycle time 6.24 ns FMAX Maximum frequency 160 MHz Notes: 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash- Based cSoCs and FPGAs. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-79 Table 2-104 • RAM4K9 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tAS Address setup time 1.28 ns tAH Address hold time 0.25 ns tENS REN, WEN setup time 1.25 ns tENH REN, WEN hold time 0.25 ns tBKS BLK setup time 2.54 ns tBKH BLK hold time 0.25 ns tDS Input data (DIN) setup time 1.10 ns tDH Input data (DIN) hold time 0.55 ns tCKQ1 Clock HIGH to new data valid on DOUT (output retained, WMODE = 0) 5.51 ns Clock HIGH to new data valid on DOUT (flow-through, WMODE = 1) 4.77 ns t CKQ2 Clock HIGH to new data valid on DOUT (pipelined) 2.82 ns tC2CWWL

1 Address collision clk-to-clk delay for reliable write after write on same address;

applicable to closing edge 0.30 ns tC2CRWH

1 Address collision clk-to-clk delay for reliable read access after write on same address;

applicable to opening edge 0.89 ns tC2CWRH applicable to opening edge 1.01 ns tRSTBQ RESET LOW to data out LOW on DOUT (flow-through) 3.21 ns RESET LOW to data out LOW on DO (pipelined) 3.21 ns tREMRSTB RESET removal 0.93 ns tRECRSTB RESET recovery 4.94 ns tMPWRSTB RESET minimum pulse width 1.18 ns tCYC Clock cycle time 10.90 ns FMAX Maximum frequency 92 MHz Notes: 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash- Based cSoCs and FPGAs. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-105 • RAM512X18 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tAS Address setup time 1.28 ns tAH Address hold time 0.25 ns tENS REN, WEN setup time 1.13 ns tENH REN, WEN hold time 0.13 ns tDS Input data (WD) setup time 1.10 ns tDH Input data (WD) hold time 0.55 ns tCKQ1 Clock High to new data valid on RD (output retained) 6.56 ns tCKQ2 Clock High to new data valid on RD (pipelined) 2.67 ns tC2CRWH applicable to opening edge 0.87 ns tC2CWRH

1 Address collision clk-to-clk delay for reliabl e write access after read on same address;

applicable to opening edge 1.04 ns tRSTBQ RESET LOW to data out LOW on RD (flow through) 3.21 ns RESET LOW to data out LOW on RD (pipelined) 3.21 ns tREMRSTB RESET removal 0.93 ns tRECRSTB RESET recovery 4.94 ns tMPWRSTB RESET minimum pulse width 1.18 ns tCYC Clock cycle time 10.90 ns FMAX Maximum frequency 92 MHz Notes: 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash- Based cSoCs and FPGAs. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-81 FIFO Figure 2-33 • FIFO Model FIFO4K18 RW2 RD17 RW1 RD16 RW0 WW2 WW1 WW0 RD0 ESTOP FSTOP FULL AFULL EMPTY AFVAL11 AEMPTY AFVAL10 AFVAL0 AEVAL11 AEVAL10 AEVAL0 REN RBLK RCLK WEN WBLK WCLK RPIPE WD17 WD16 WD0 RESET

IGLOO nano Low Power Flash FPGAs Revision 17 2-85 Timing Characteristics Table 2-106 • FIFO Worst Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description Std. Units tENS REN, WEN Setup Time 1.66 ns tENH REN, WEN Hold Time 0.13 ns tBKS BLK Setup Time 0.30 ns tBKH BLK Hold Time 0.00 ns tDS Input Data (WD) Setup Time 0.63 ns tDH Input Data (WD) Hold Time 0.20 ns tCKQ1 Clock High to New Data Valid on RD (flow-through) 2.77 ns tCKQ2 Clock High to New Data Valid on RD (pipelined) 1.50 ns tRCKEF RCLK High to Empty Flag Valid 2.94 ns tWCKFF WCLK High to Full Flag Valid 2.79 ns tCKAF Clock High to Almost Empty/Full Flag Valid 10.71 ns tRSTFG RESET Low to Empty/Full Flag Valid 2.90 ns tRSTAF RESET Low to Almost Empty/Full Flag Valid 10.60 ns tRSTBQ RESET Low to Data Out LOW on RD (flow-through) 1.68 ns RESET Low to Data Out LOW on RD (pipelined) 1.68 ns tREMRSTB RESET Removal 0.51 ns tRECRSTB RESET Recovery 2.68 ns tMPWRSTB RESET Minimum Pulse Width 0.68 ns tCYC Clock Cycle Time 6.24 ns FMAX Maximum Frequency for FIFO 160 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

IGLOO nano DC and Switching Characteristics Table 2-107 • FIFO Worst Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V Parameter Description Std. Units tENS REN, WEN Setup Time 3.44 ns tENH REN, WEN Hold Time 0.26 ns tBKS BLK Setup Time 0.30 ns tBKH BLK Hold Time 0.00 ns tDS Input Data (DI) Setup Time 1.30 ns tDH Input Data (DI) Hold Time 0.41 ns tCKQ1 Clock High to New Data Valid on RD (flow-through) 5.67 ns tCKQ2 Clock High to New Data Valid on RD (pipelined) 3.02 ns tRCKEF RCLK High to Empty Flag Valid 6.02 ns tWCKFF WCLK High to Full Flag Valid 5.71 ns tCKAF Clock High to Almost Empty/Full Flag Valid 22.17 ns tRSTFG RESET LOW to Empty/Full Flag Valid 5.93 ns tRSTAF RESET LOW to Almost Empty/Full Flag Valid 21.94 ns tRSTBQ RESET LOW to Data Out Low on RD (flow-through) 3.41 ns RESET LOW to Data Out Low on RD (pipelined) 4.09 3.41 tREMRSTB RESET Removal 1.02 ns tRECRSTB RESET Recovery 5.48 ns tMPWRSTB RESET Minimum Pulse Width 1.18 ns tCYC Clock Cycle Time 10.90 ns FMAX Maximum Frequency for FIFO 92 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO nano Low Power Flash FPGAs Revision 17 2-87 Embedded FlashROM Characteristics Timing Characteristics Figure 2-41 • Timing Diagram A0 A1 tSU tHOLD tSU tHOLD tSU tHOLD tCKQ2 tCKQ2 tCKQ2 CLK Address Data D0 D0 D1 Table 2-108 • Embedded FlashROM Access Time Worst Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V Parameter Description Std. Units tSU Address Setup Time 0.57 ns tHOLD Address Hold Time 0.00 ns tCK2Q Clock to Out 20.90 ns FMAX Maximum Clock Frequency 15 MHz Table 2-109 • Embedded FlashROM Access Time Worst Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V Parameter Description Std. Units tSU Address Setup Time 0.59 ns tHOLD Address Hold Time 0.00 ns tCK2Q Clock to Out 35.74 ns FMAX Maximum Clock Frequency 10 MHz

JTAG timing delays do not include JTAG I/Os. To obtain complete JTAG timing, add I/O buffer delays to the corresponding standard selected; refer to the I/O timing characteristics in the "User I/O Characteristics" section on page 2-15 for more details. Timing Characteristics Table 2-110 • JTAG 1532 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tDISU Test Data Input Setup Time 1.00 ns tDIHD Test Data Input Hold Time 2.00 ns tTMSSU Test Mode Select Setup Time 1.00 ns tTMDHD Test Mode Select Hold Time 2.00 ns tTCK2Q Clock to Q (data out) 8.00 ns tRSTB2Q Reset to Q (data out) 25.00 ns FTCKMAX TCK Maximum Frequency 15 MHz tTRSTREM ResetB Removal Time 0.58 ns tTRSTREC ResetB Recovery Time 0.00 ns tTRSTMPW ResetB Minimum Pulse TBD ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. Table 2-111 • JTAG 1532 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V Parameter Description Std. Units tDISU Test Data Input Setup Time 1.50 ns tDIHD Test Data Input Hold Time 3.00 ns tTMSSU Test Mode Select Setup Time 1.50 ns tTMDHD Test Mode Select Hold Time 3.00 ns tTCK2Q Clock to Q (data out) 11.00 ns tRSTB2Q Reset to Q (data out) 30.00 ns FTCKMAX TCK Maximum Frequency 9.00 MHz tTRSTREM ResetB Removal Time 1.18 ns tTRSTREC ResetB Recovery Time 0.00 ns tTRSTMPW ResetB Minimum Pulse TBD ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.

3 – Pin Descriptions Supply Pins GND Ground Ground supply voltage to the core, I/O outputs, and I/O logic. GNDQ Ground (quiet) Quiet ground supply voltage to input buffers of I/O banks. Within the package, the GNDQ plane is decoupled from the simultaneous switching noise orig inated from the output buffer ground domain. This minimizes the noise transfer within the package and im proves input signal integrity. GNDQ must always be connected to GND on the board. VCC Core Supply Voltage Supply voltage to the FPGA core, nominally 1.5 V fo r IGLOO nano V5 devices, and 1.2 V or 1.5 V for IGLOO nano V2 devices. VCC is required for poweri ng the JTAG state machine in addition to VJTAG. Even when a device is in bypass mode in a JTAG chain of interconnected devices, both VCC and VJTAG must remain powered to allow JTAG signals to pass through the device. VCCIBx I/O Supply Voltage Supply voltage to the bank's I/O output buffers and I/O logic. Bx is the I/O bank number. There are up to eight I/O banks on low power flash devices plus a dedicated VJTAG bank. Each bank can have a separate VCCI connection. All I/Os in a bank will run off the same VCCIBx supply. VCCI can be 1.2 V, pins tied to GND. VMVx I/O Supply Voltage (quiet) Quiet supply voltage to the input buffers of each I/O bank. x is the bank number. Within the package, the VMV plane biases the input stage of the I/Os in the I/O banks. This minimizes the noise transfer within the package and improves input signal integrity. Each bank must have at least one VMV connection, and no VMV should be left unconnected. All I/Os in a bank run off the same VMVx supply. VMV is used to provide a quiet supply voltage to the input buffer s of each I/O bank. VMVx can be 1.2 V, 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VMV pins tied to GND. VMV and VCCI should be at the same voltage within a given I/O bank. Used VMV pins must be connected to the corresponding VCCI pins of the same bank (i.e., VMV0 to VCCIB0, VMV1 to VCCIB1, etc.). VCCPLA/B/C/D/E/F PLL Supply Voltage Supply voltage to analog PLL, nominally 1.5 V or 1.2 V. When the PLLs are not used, the Microsemi Designer place-and-route tool automatically disables the unused PLLs to lower power consumption. The user should tie unused VCCPLx and VCOMPLx pins to ground. Microsemi recommends tying VCCPLx to VCC and using proper filtering circuits to decouple VCC noise from the PLLs. Refer to the PLL Power Supply Decoupling section of the "Clock Conditioning Circuits in IGLOO and ProASIC3 Devices" chapter in the IGLOO nano FPGA Fabric User’s Guide for a complete board solution for the PLL analog power supply and ground. There is one VCCPLF pin on IGLOO nano devices. VCOMPLA/B/C/D/E/F PLL Ground Ground to analog PLL power supplies. When the PLLs are not used, the Microsemi Designer place-and- route tool automatically disables the unused PLLs to lower power consumption. The user should tie unused VCCPLx and VCOMPLx pins to ground. There is one VCOMPLF pin on IGLOO nano devices. VJTAG JTAG Supply Voltage Low power flash devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any voltage from 1.5 V to 3.3 V (nominal). Isol ating the JTAG power supply in a separate I/O bank gives greater flexibility in supply selection and si mplifies power supply and PCB design. If the JTAG

interface is neither used nor planned for use, the VJTAG pin together with the TRST pin could be tied to GND. It should be noted that VCC is required to be powered for JTAG operation; VJTAG alone is insufficient. If a device is in a JTAG chain of interconnected boards, the board containing the device can be powered down, provided both VJTAG and VCC to the part remain powered; otherwise, JTAG signals will not be able to transition the device, even in bypass mode. Microsemi recommends that VPUMP and VJTAG pow er supplies be kept separate with independent filtering capacitors rather than supplying them from a common rail. VPUMP Programming Supply Voltage IGLOO nano devices support single-voltage ISP of the configuration flash and FlashROM. For programming, VPUMP should be 3.3 V nominal. Duri ng normal device operation, VPUMP can be left floating or can be tied (pulled up) to any voltage between 0 V and the VPUMP maximum. Programming power supply voltage (VPUMP) range is listed in the datasheet. When the VPUMP pin is tied to ground, it will shut off the charge pump circuitry, resulting in no sources of oscillation from the charge pump circuitry. For proper programming, 0.01 µF and 0.33 µF capacitors (both rated at 16 V) are to be connected in parallel across VPUMP and GND, and positioned as close to the FPGA pins as possible. Microsemi recommends that VPUMP and VJTAG pow er supplies be kept separate with independent filtering capacitors rather than supplying them from a common rail. User Pins I/O User Input/Output The I/O pin functions as an input, output, tristate, or bidirectional buffer. Input and output signal levels are compatible with the I/O standard selected. During programming, I/Os become tristated and weakly pulled up to VCCI. With VCCI, VMV, and VCC supplies continuously powered up, when the device transitions from programming to operating mode, the I/Os are instantly configured to the desired user configuration. Unused I/Os are configured as follows:

• Output buffer is disabled (with tristate value of high impedance)
• Input buffer is disabled (with tristate value of high impedance)
• Weak pull-up is programmed GL Globals GL I/Os have access to certain clock conditioning circuitry (and the PLL) and/or have direct access to the global network (spines). Additionally, the global I/Os can be used as regular I/Os, since they have identical capabilities. Unused GL pins are configured as inputs with pull-up resistors. See more detailed descriptions of global I/O connecti vity in the "Clock Conditioning Circuits in IGLOO and ProASIC3 Devices" chapter in the IGLOO nano FPGA Fabric User’s Guide. All inputs labeled GC/GF are direct inputs into the quadrant clocks. For example, if GAA0 is us ed for an input, GAA1 and GAA2 are no longer available for input to the quadrant globals. All inputs labeled GC/GF are direct inputs into the chip-level globals, and the rest are connec ted to the quadrant globals. The inputs to the global network are multiplexed, and only one input can be used as a global input. Refer to the "I/O Structures in nano Devices" chapter of the IGLOO nano FPGA Fabric User’s Guide for an explanation of the naming of global pins. FF Flash*Freeze Mode Activation Pin Flash*Freeze is available on IGLOO nano devices. The FF pin is a dedicated input pin used to enter and exit Flash*Freeze mode. The FF pin is active low, has the same characteristics as a single-ended I/O, and must meet the maximum rise and fall times. When Flash*Freeze mode is not used in the design, the FF pin is available as a regular I/O. When Flash*Freeze mode is used, the FF pin must not be left floating to avoid accidentally entering Flash*Freeze mode. While in Flash*Freeze mode, the Flash*Freeze pin should be constantly asserted. The Flash*Freeze pin can be used with any single- ended I/O standard supported by the I/O bank in which the pin is located, and input signal levels compatible with the I/O standard selected. The FF pin

IGLOO nano Low Power Flash FPGAs Revision 17 3-3 should be treated as a sensitive asynchronous signa l. When defining pin placement and board layout, simultaneously switching outputs (SSOs) and their effects on sensitive asynchronous pins must be considered. Unused FF or I/O pins are tristated with weak pul l-up. This default config uration applies to both Flash*Freeze mode and normal operation mode. No user intervention is required. Table 3-1 shows the Flash*Freeze pin location on the available packages for IGLOO nano devices. The Flash*Freeze pin location is independent of device (except for a PQ208 package), allowing migration to larger or smaller IGLOO nano devices while maintaining the same pin location on the board. Refer to the "Flash*Freeze Technology and Low Power Modes" chapter of the IGLOO nano FPGA Fabric User’s Guide for more information on I/O states during Flash*Freeze mode. JTAG Pins Low power flash devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any voltage from 1.5 V to 3.3 V (nominal). VC C must also be powered for the JTAG state machine to operate, even if the device is in bypass mode; VJTAG alone is insufficient. Both VJTAG and VCC to the part must be supplied to allow JTAG signals to transition the device. Isolating the JTAG power supply in a separate I/O bank gives greater flexibility in s upply selection and simplifies power supply and PCB design. If the JTAG interface is neither used nor planned for use, the VJTAG pin together with the TRST pin could be tied to GND. TCK Test Clock Test clock input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not have an internal pull-up/-down resistor. If JTAG is not used, Microsemi recommends tying off TCK to GND through a resistor placed close to the FPGA pin. This prevent s JTAG operation in case TMS enters an undesired state. Note that to operate at all VJTAG voltages, 500 to 1 k will satisfy the requirements. Refer to Table 3-2 for more information. Table 3-1 • Flash*Freeze Pin Locations for IGLOO nano Devices Package Flash*Freeze Pin CS81/UC81 H2 QN48 14 QN68 18 VQ100 27 UC36 E2 Table 3-2 • Recommended Tie-Off Values for the TCK and TRST Pins VJTAG Tie-Off Resistance 1,2 VJTAG at 3.3 V 200  to 1 k VJTAG at 2.5 V 200  to 1 k VJTAG at 1.8 V 500  to 1 k VJTAG at 1.5 V 500  to 1 k Notes: 1. The TCK pin can be pulled-up or pulled-down. 2. The TRST pin is pulled-down. 3. Equivalent parallel resistance if more than one device is on the JTAG chain

Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an internal weak pull-up resistor on the TDI pin. TDO Test Data Output Serial output for JTAG boundary scan, ISP , and UJTAG usage. TMS Test Mode Select The TMS pin controls the use of the IEEE 1532 boundary scan pins (TCK, TDI, TDO, TRST). There is an internal weak pull-up resistor on the TMS pin. TRST Boundary Scan Reset Pin The TRST pin functions as an active-low input to asynchronously initialize (or reset) the boundary scan circuitry. There is an internal weak pull-up resistor on the TRST pin. If JTAG is not used, an external pull-down resistor could be included to ensure the test access port (TAP) is held in reset mode. The resistor values must be chosen from Table 3-2 and must satisfy the parallel resistance value requirement. The values in Table 3-2 correspond to the resistor recommended when a single device is used, and the equivalent parallel resistor when multiple devices are connected via a JTAG chain. In critical applications, an upset in the JTAG circui t could allow entrance to an undesired JTAG state. In such cases, Microsemi recommends tying off TRST to GND through a resistor placed close to the FPGA pin. Note that to operate at all VJTAG voltages, 500  to 1 k will satisfy the requirements. Special Function Pins NC No Connect This pin is not connected to circuitry within the device. These pins can be driven to any voltage or can be left floating with no effect on the operation of the device. DC Do Not Connect This pin should not be connected to any signals on the PCB. These pins should be left unconnected. Packaging Semiconductor technology is constantly shrinking in size while growing in capability and functional integration. To enable next-generation silicon technologies, semiconductor packages have also evolved to provide improved performance and flexibility. Microsemi consistently delivers packages that provide the necessary mechanical and environmental protection to ensure consistent reliability an d performance. Microsemi IC packaging technology efficiently supports high-density FPGAs with large-pin-count Ball Grid Arrays (BGAs), but is also flexible enough to accommodate stringent form factor requirements for Chip Scale Packaging (CSP). In addition, Microsemi offers a variety of packages designed to meet your most demanding application and economic requirements for today's embedded and mobile systems. Table 3-3 • TRST and TCK Pull-Down Recommendations VJTAG Tie-Off Resistance* VJTAG at 3.3 V 200  to 1 k VJTAG at 2.5 V 200  to 1 k VJTAG at 1.8 V 500  to 1 k VJTAG at 1.5 V 500  to 1 k Note: Equivalent parallel resistance if more than one device is on the JTAG chain

IGLOO nano Low Power Flash FPGAs Revision 17 3-5 Related Documents User’s Guides IGLOO nano FPGA Fabric User’s Guide http://www.microsemi.com/soc/documents/IGLOO_nano_UG.pdf Packaging Documents The following documents provide packaging information and device selection for low power flash devices. Product Catalog http://www.microsemi.com/soc/documents/ProdCat_PIB.pdf Lists devices currently recommended for new designs and the packages available for each member of the family. Use this document or the datasheet tables to determine the best package for your design, and which package drawing to use. Package Mechanical Drawings http://www.microsemi.com/soc/documents/PckgMechDrwngs.pdf This document contains the package mechanical dr awings for all packages currently or previously supplied by Microsemi. Use the bookmarks to navigate to the package mechanical drawings. Additional packaging materials are on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/products/solutions/package/docs.aspx.

4 – Package Pin Assignments UC36 Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Note: This is the bottom view of the package. 65 4321 A B C D E F Pin 1 Pad Corner

IGLOO nano Low Power Flash FPGAs Revision 17 4-3 UC81 Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Note: This is the bottom view of the package. 123456789 A B C D E F G H J A1 Ball Pad Corner

Pin Number AGLN020 Function A1 IO64RSB2 A2 IO54RSB2 A3 IO57RSB2 A4 IO36RSB1 A5 IO32RSB1 A6 IO24RSB1 A7 IO20RSB1 A8 IO04RSB0 A9 IO08RSB0 B1 IO59RSB2 B2 IO55RSB2 B3 IO62RSB2 B4 IO34RSB1 B5 IO28RSB1 B6 IO22RSB1 B7 IO18RSB1 B8 IO00RSB0 B9 IO03RSB0 C1 IO51RSB2 C2 IO50RSB2 C3 NC C4 NC C5 NC C6 NC C7 NC C8 IO10RSB0 C9 IO07RSB0 D1 IO49RSB2 D2 IO44RSB2 D3 NC D4 VCC D5 VCCIB2 D6 GND D7 NC D8 IO13RSB0 D9 IO12RSB0 E1 GEC0/IO48RSB2 E2 GEA0/IO47RSB2 E3 NC E4 VCCIB1 E5 VCC E6 VCCIB0 E7 NC E8 GDA0/IO15RSB0 E9 GDC0/IO14RSB0 F1 IO46RSB2 F2 IO45RSB2 F3 NC F4 GND F5 VCCIB1 F6 NC F7 NC F8 IO16RSB0 F9 IO17RSB0 G1 IO43RSB2 G2 IO42RSB2 G3 IO41RSB2 G4 IO31RSB1 G5 NC G6 IO21RSB1 G7 NC G8 VJTAG G9 TRST H1 IO40RSB2 H2 FF/IO39RSB1 H3 IO35RSB1 H4 IO29RSB1 H5 IO26RSB1 H6 IO25RSB1 H7 IO19RSB1 H8 TDI H9 TDO UC81 Pin Number AGLN020 Function J1 IO38RSB1 J2 IO37RSB1 J3 IO33RSB1 J4 IO30RSB1 J5 IO27RSB1 J6 IO23RSB1 J7 TCK J8 TMS J9 VPUMP UC81 Pin Number AGLN020 Function

IGLOO nano Low Power Flash FPGAs Revision 17 4-5 UC81 Pin Number AGLN030Z Function A1 IO00RSB0 A2 IO02RSB0 A3 IO06RSB0 A4 IO11RSB0 A5 IO16RSB0 A6 IO19RSB0 A7 IO22RSB0 A8 IO24RSB0 A9 IO26RSB0 B1 IO81RSB1 B2 IO04RSB0 B3 IO10RSB0 B4 IO13RSB0 B5 IO15RSB0 B6 IO20RSB0 B7 IO21RSB0 B8 IO28RSB0 B9 IO25RSB0 C1 IO79RSB1 C2 IO80RSB1 C3 IO08RSB0 C4 IO12RSB0 C5 IO17RSB0 C6 IO14RSB0 C7 IO18RSB0 C8 IO29RSB0 C9 IO27RSB0 D1 IO74RSB1 D2 IO76RSB1 D3 IO77RSB1 D4 VCC D5 VCCIB0 D6 GND D7 IO23RSB0 D8 IO31RSB0 D9 IO30RSB0 E1 GEB0/IO71RSB1 E2 GEA0/IO72RSB1 E3 GEC0/IO73RSB1 E4 VCCIB1 E5 VCC E6 VCCIB0 E7 GDC0/IO32RSB0 E8 GDA0/IO33RSB0 E9 GDB0/IO34RSB0 F1 IO68RSB1 F2 IO67RSB1 F3 IO64RSB1 F4 GND F5 VCCIB1 F6 IO47RSB1 F7 IO36RSB0 F8 IO38RSB0 F9 IO40RSB0 G1 IO65RSB1 G2 IO66RSB1 G3 IO57RSB1 G4 IO53RSB1 G5 IO49RSB1 G6 IO45RSB1 G7 IO46RSB1 G8 VJTAG G9 TRST H1 IO62RSB1 H2 FF/IO60RSB1 H3 IO58RSB1 H4 IO54RSB1 H5 IO48RSB1 H6 IO43RSB1 H7 IO42RSB1 UC81 Pin Number AGLN030Z Function H8 TDI H9 TDO J1 IO63RSB1 J2 IO61RSB1 J3 IO59RSB1 J4 IO56RSB1 J5 IO52RSB1 J6 IO44RSB1 J7 TCK J8 TMS J9 VPUMP UC81 Pin Number AGLN030Z Function

For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Note: This is the bottom view of the package. 123456789 A B C D E F G H J A1 Ball Pad Corner

IGLOO nano Low Power Flash FPGAs Revision 17 4-7 CS81 Pin Number AGLN020 Function A1 IO64RSB2 A2 IO54RSB2 A3 IO57RSB2 A4 IO36RSB1 A5 IO32RSB1 A6 IO24RSB1 A7 IO20RSB1 A8 IO04RSB0 A9 IO08RSB0 B1 IO59RSB2 B2 IO55RSB2 B3 IO62RSB2 B4 IO34RSB1 B5 IO28RSB1 B6 IO22RSB1 B7 IO18RSB1 B8 IO00RSB0 B9 IO03RSB0 C1 IO51RSB2 C2 IO50RSB2 C3 NC C4 NC C5 NC C6 NC C7 NC C8 IO10RSB0 C9 IO07RSB0 D1 IO49RSB2 D2 IO44RSB2 D3 NC D4 VCC D5 VCCIB2 D6 GND D7 NC D8 IO13RSB0 D9 IO12RSB0 E1 GEC0/IO48RSB2 E2 GEA0/IO47RSB2 E3 NC E4 VCCIB1 E5 VCC E6 VCCIB0 E7 NC E8 GDA0/IO15RSB0 E9 GDC0/IO14RSB0 F1 IO46RSB2 F2 IO45RSB2 F3 NC F4 GND F5 VCCIB1 F6 NC F7 NC F8 IO16RSB0 F9 IO17RSB0 G1 IO43RSB2 G2 IO42RSB2 G3 IO41RSB2 G4 IO31RSB1 G5 NC G6 IO21RSB1 G7 NC G8 VJTAG G9 TRST H1 IO40RSB2 H2 FF/IO39RSB1 H3 IO35RSB1 H4 IO29RSB1 H5 IO26RSB1 H6 IO25RSB1 H7 IO19RSB1 H8 TDI H9 TDO CS81 Pin Number AGLN020 Function J1 IO38RSB1 J2 IO37RSB1 J3 IO33RSB1 J4 IO30RSB1 J5 IO27RSB1 J6 IO23RSB1 J7 TCK J8 TMS J9 VPUMP CS81 Pin Number AGLN020 Function

IGLOO nano Low Power Flash FPGAs Revision 17 4-9 CS81 Pin Number AGLN060 Function A1 GAA0/IO02RSB0 A2 GAA1/IO03RSB0 A3 GAC0/IO06RSB0 A4 IO09RSB0 A5 IO13RSB0 A6 IO18RSB0 A7 GBB0/IO21RSB0 A8 GBA1/IO24RSB0 A9 GBA2/IO25RSB0 B1 GAA2/IO95RSB1 B2 GAB0/IO04RSB0 B3 GAC1/IO07RSB0 B4 IO08RSB0 B5 IO15RSB0 B6 GBC0/IO19RSB0 B7 GBB1/IO22RSB0 B8 IO26RSB0 B9 GBB2/IO27RSB0 C1 GAB2/IO93RSB1 C2 IO94RSB1 C3 GND C4 IO10RSB0 C5 IO17RSB0 C6 GND C7 GBA0/IO23RSB0 C8 GBC2/IO29RSB0 C9 IO31RSB0 D1 GAC2/IO91RSB1 D2 IO92RSB1 D3 GFA2/IO80RSB1 D4 VCC D5 VCCIB0 D6 GND D7 GCC2/IO43RSB0 D8 GCC1/IO35RSB0 D9 GCC0/IO36RSB0 E1 GFB0/IO83RSB1 E2 GFB1/IO84RSB1 E3 GFA1/IO81RSB1 E4 VCCIB1 E5 VCC E6 VCCIB0 E7 GCA1/IO39RSB0 E8 GCA0/IO40RSB0 E9 GCB2/IO42RSB0

1 VCCPLF

Pin Number AGLN060 Function H6 IO56RSB1 H72 GDA2/IO51RSB1 H8 TDI H9 TDO J1 GEA2/IO68RSB1 J2 GEC2/IO66RSB1 J3 IO64RSB1 J4 IO61RSB1 J5 IO58RSB1 J6 IO55RSB1 J7 TCK J8 TMS J9 VPUMP CS81 Pin Number AGLN060 Function Notes: 1. Pin numbers F1 and F2 must be connected to ground because a PLL is not supported for AGLN060-CS81. 2. The bus hold attribute (hold previous I/O state in Flash* Freeze mode) is not supported for pin H7 in AGLN060-CS81.

Pin Number AGLN060Z Function A1 GAA0/IO02RSB0 A2 GAA1/IO03RSB0 A3 GAC0/IO06RSB0 A4 IO09RSB0 A5 IO13RSB0 A6 IO18RSB0 A7 GBB0/IO21RSB0 A8 GBA1/IO24RSB0 A9 GBA2/IO25RSB0 B1 GAA2/IO95RSB1 B2 GAB0/IO04RSB0 B3 GAC1/IO07RSB0 B4 IO08RSB0 B5 IO15RSB0 B6 GBC0/IO19RSB0 B7 GBB1/IO22RSB0 B8 IO26RSB0 B9 GBB2/IO27RSB0 C1 GAB2/IO93RSB1 C2 IO94RSB1 C3 GND C4 IO10RSB0 C5 IO17RSB0 C6 GND C7 GBA0/IO23RSB0 C8 GBC2/IO29RSB0 C9 IO31RSB0 D1 GAC2/IO91RSB1 D2 IO92RSB1 D3 GFA2/IO80RSB1 D4 VCC D5 VCCIB0 D6 GND D7 GCC2/IO43RSB0 D8 GCC1/IO35RSB0 D9 GCC0/IO36RSB0 E1 GFB0/IO83RSB1 E2 GFB1/IO84RSB1 E3 GFA1/IO81RSB1 E4 VCCIB1 E5 VCC E6 VCCIB0 E7 GCA1/IO39RSB0 E8 GCA0/IO40RSB0 E9 GCB2/IO42RSB0 Pin Number AGLN060Z Function H6 IO56RSB1 H72 GDA2/IO51RSB1 H8 TDI H9 TDO J1 GEA2/IO68RSB1 J2 GEC2/IO66RSB1 J3 IO64RSB1 J4 IO61RSB1 J5 IO58RSB1 J6 IO55RSB1 J7 TCK J8 TMS J9 VPUMP CS81 Pin Number AGLN060Z Function Notes: 1. Pin numbers F1 and F2 must be connected to groun d because a PLL is not supported for AGLN060Z-CS81. 2. The bus hold attribute (hold previous I/O state in Flash* Freeze mode) is not supported for pin H7 in AGLN060Z-CS81.

IGLOO nano Low Power Flash FPGAs Revision 17 4-11 CS81 Pin Number AGLN125 Function A1 GAA0/IO00RSB0 A2 GAA1/IO01RSB0 A3 GAC0/IO04RSB0 A4 IO13RSB0 A5 IO22RSB0 A6 IO32RSB0 A7 GBB0/IO37RSB0 A8 GBA1/IO40RSB0 A9 GBA2/IO41RSB0 B1 GAA2/IO132RSB1 B2 GAB0/IO02RSB0 B3 GAC1/IO05RSB0 B4 IO11RSB0 B5 IO25RSB0 B6 GBC0/IO35RSB0 B7 GBB1/IO38RSB0 B8 IO42RSB0 B9 GBB2/IO43RSB0 C1 GAB2/IO130RSB1 C2 IO131RSB1 C3 GND C4 IO15RSB0 C5 IO28RSB0 C6 GND C7 GBA0/IO39RSB0 C8 GBC2/IO45RSB0 C9 IO47RSB0 D1 GAC2/IO128RSB1 D2 IO129RSB1 D3 GFA2/IO117RSB1 D4 VCC D5 VCCIB0 D6 GND D7 GCC2/IO59RSB0 D8 GCC1/IO51RSB0 D9 GCC0/IO52RSB0 E1 GFB0/IO120RSB1 E2 GFB1/IO121RSB1 E3 GFA1/IO118RSB1 E4 VCCIB1 E5 VCC E6 VCCIB0 E7 GCA0/IO56RSB0 E8 GCA1/IO55RSB0 E9 GCB2/IO58RSB0 F1* VCCPLF F2* VCOMPLF F3 GND F4 GND F5 VCCIB1 F6 GND F7 GDA1/IO65RSB0 F8 GDC1/IO61RSB0 F9 GDC0/IO62RSB0 G1 GEA0/IO104RSB1 G2 GEC0/IO108RSB1 G3 GEB1/IO107RSB1 G4 IO96RSB1 G5 IO92RSB1 G6 IO72RSB1 G7 GDB2/IO68RSB1 G8 VJTAG G9 TRST H1 GEA1/IO105RSB1 H2 FF/GEB2/IO102RSB1 H3 IO99RSB1 H4 IO94RSB1 H5 IO91RSB1 H6 IO81RSB1 H7 GDA2/IO67RSB1 H8 TDI H9 TDO CS81 Pin Number AGLN125 Function J1 GEA2/IO103RSB1 J2 GEC2/IO101RSB1 J3 IO97RSB1 J4 IO93RSB1 J5 IO90RSB1 J6 IO78RSB1 J7 TCK J8 TMS J9 VPUMP CS81 Pin Number AGLN125 Function Note: * Pin numbers F1 and F2 must be connected to ground because a PLL is not supported for AGLN125-CS81.

Pin Number AGLN125Z Function A1 GAA0/IO00RSB0 A2 GAA1/IO01RSB0 A3 GAC0/IO04RSB0 A4 IO13RSB0 A5 IO22RSB0 A6 IO32RSB0 A7 GBB0/IO37RSB0 A8 GBA1/IO40RSB0 A9 GBA2/IO41RSB0 B1 GAA2/IO132RSB1 B2 GAB0/IO02RSB0 B3 GAC1/IO05RSB0 B4 IO11RSB0 B5 IO25RSB0 B6 GBC0/IO35RSB0 B7 GBB1/IO38RSB0 B8 IO42RSB0 B9 GBB2/IO43RSB0 C1 GAB2/IO130RSB1 C2 IO131RSB1 C3 GND C4 IO15RSB0 C5 IO28RSB0 C6 GND C7 GBA0/IO39RSB0 C8 GBC2/IO45RSB0 C9 IO47RSB0 D1 GAC2/IO128RSB1 D2 IO129RSB1 D3 GFA2/IO117RSB1 D4 VCC D5 VCCIB0 D6 GND D7 GCC2/IO59RSB0 D8 GCC1/IO51RSB0 D9 GCC0/IO52RSB0 E1 GFB0/IO120RSB1 E2 GFB1/IO121RSB1 E3 GFA1/IO118RSB1 E4 VCCIB1 E5 VCC E6 VCCIB0 E7 GCA0/IO56RSB0 E8 GCA1/IO55RSB0 E9 GCB2/IO58RSB0 F1* VCCPLF F2* VCOMPLF F3 GND F4 GND F5 VCCIB1 F6 GND F7 GDA1/IO65RSB0 F8 GDC1/IO61RSB0 F9 GDC0/IO62RSB0 G1 GEA0/IO104RSB1 G2 GEC0/IO108RSB1 G3 GEB1/IO107RSB1 G4 IO96RSB1 G5 IO92RSB1 G6 IO72RSB1 G7 GDB2/IO68RSB1 G8 VJTAG G9 TRST H1 GEA1/IO105RSB1 H2 FF/GEB2/IO102RSB1 H3 IO99RSB1 H4 IO94RSB1 H5 IO91RSB1 H6 IO81RSB1 H7 GDA2/IO67RSB1 H8 TDI H9 TDO CS8 Pin Number AGLN125Z Function J1 GEA2/IO103RSB1 J2 GEC2/IO101RSB1 J3 IO97RSB1 J4 IO93RSB1 J5 IO90RSB1 J6 IO78RSB1 J7 TCK J8 TMS J9 VPUMP CS8 Pin Number AGLN125Z Function Note: * Pin numbers F1 and F2 must be connected to ground because a PLL is not supported for AGLN125Z-CS81.

IGLOO nano Low Power Flash FPGAs Revision 17 4-13 CS81 Pin Number AGLN250 Function A1 GAA0/IO00RSB0 A2 GAA1/IO01RSB0 A3 GAC0/IO04RSB0 A4 IO13RSB0 A5 IO21RSB0 A6 IO27RSB0 A7 GBB0/IO37RSB0 A8 GBA1/IO40RSB0 A9 GBA2/IO41PPB1 B1 GAA2/IO118UPB3 B2 GAB0/IO02RSB0 B3 GAC1/IO05RSB0 B4 IO11RSB0 B5 IO23RSB0 B6 GBC0/IO35RSB0 B7 GBB1/IO38RSB0 B8 IO41NPB1 B9 GBB2/IO42PSB1 C1 GAB2/IO117UPB3 C2 IO118VPB3 C3 GND C4 IO15RSB0 C5 IO25RSB0 C6 GND C7 GBA0/IO39RSB0 C8 GBC2/IO43B1 C9 IO43NDB1 D1 GAC2/IO116USB3 D2 IO117VPB3 D3 GFA2/IO107PSB3 D4 VCC D5 VCCIB0 D6 GND D7 IO52NPB1 D8 GCC1/IO48PDB1 D9 GCC0/IO48NDB1 E1 GFB0/IO109NDB3 E2 GFB1/IO109PDB3 E3 GFA1/IO108PSB3 E4 VCCIB3 E5 VCC E6 VCCIB1 E7 GCA0/IO50NDB1 E8 GCA1/IO50PDB1 E9 GCB2/IO52PPB1 F1* VCCPLF F2* VCOMPLF F3 GND F4 GND F5 VCCIB2 F6 GND F7 GDA1/IO60USB1 F8 GDC1/IO58UDB1 F9 GDC0/IO58VDB1 G1 GEA0/IO98NDB3 G2 GEC1/IO100PDB3 G3 GEC0/IO100NDB3 G4 IO91RSB2 G5 IO86RSB2 G6 IO71RSB2 G7 GDB2/IO62RSB2 G8 VJTAG G9 TRST H1 GEA1/IO98PDB3 H2 FF/GEB2/IO96RSB2 H3 IO93RSB2 H4 IO90RSB2 H5 IO85RSB2 H6 IO77RSB2 H7 GDA2/IO61RSB2 H8 TDI H9 TDO CS81 Pin Number AGLN250 Function J1 GEA2/IO97RSB2 J2 GEC2/IO95RSB2 J3 IO92RSB2 J4 IO88RSB2 J5 IO84RSB2 J6 IO74RSB2 J7 TCK J8 TMS J9 VPUMP CS81 Pin Number AGLN250 Function Note: * Pin numbers F1 and F2 must be connected to ground because a PLL is not supported for AGLN250-CS81.

Pin Number AGLN250Z Function A1 GAA0/IO00RSB0 A2 GAA1/IO01RSB0 A3 GAC0/IO04RSB0 A4 IO07RSB0 A5 IO09RSB0 A6 IO12RSB0 A7 GBB0/IO16RSB0 A8 GBA1/IO19RSB0 A9 GBA2/IO20RSB1 B1 GAA2/IO67RSB3 B2 GAB0/IO02RSB0 B3 GAC1/IO05RSB0 B4 IO06RSB0 B5 IO10RSB0 B6 GBC0/IO14RSB0 B7 GBB1/IO17RSB0 B8 IO21RSB1 B9 GBB2/IO22RSB1 C1 GAB2/IO65RSB3 C2 IO66RSB3 C3 GND C4 IO08RSB0 C5 IO11RSB0 C6 GND C7 GBA0/IO18RSB0 C8 GBC2/IO23RSB1 C9 IO24RSB1 D1 GAC2/IO63RSB3 D2 IO64RSB3 D3 GFA2/IO56RSB3 D4 VCC D5 VCCIB0 D6 GND D7 IO30RSB1 D8 GCC1/IO25RSB1 D9 GCC0/IO26RSB1 E1 GFB0/IO59RSB3 E2 GFB1/IO60RSB3 E3 GFA1/IO58RSB3 E4 VCCIB3 E5 VCC E6 VCCIB1 E7 GCA0/IO28RSB1 E8 GCA1/IO27RSB1 E9 GCB2/IO29RSB1 F1* VCCPLF F2* VCOMPLF F3 GND F4 GND F5 VCCIB2 F6 GND F7 GDA1/IO33RSB1 F8 GDC1/IO31RSB1 F9 GDC0/IO32RSB1 G1 GEA0/IO51RSB3 G2 GEC1/IO54RSB3 G3 GEC0/IO53RSB3 G4 IO45RSB2 G5 IO42RSB2 G6 IO37RSB2 G7 GDB2/IO35RSB2 G8 VJTAG G9 TRST H1 GEA1/IO52RSB3 H2 FF/GEB2/IO49RSB2 H3 IO47RSB2 H4 IO44RSB2 H5 IO41RSB2 H6 IO39RSB2 H7 GDA2/IO34RSB2 H8 TDI H9 TDO CS81 Pin Number AGLN250Z Function J1 GEA2/IO50RSB2 J2 GEC2/IO48RSB2 J3 IO46RSB2 J4 IO43RSB2 J5 IO40RSB2 J6 IO38RSB2 J7 TCK J8 TMS J9 VPUMP CS81 Pin Number AGLN250Z Function Note: * Pin numbers F1 and F2 must be connected to ground because a PLL is not supported for AGLN250Z-CS81.

IGLOO nano Low Power Flash FPGAs Revision 17 4-15 QN48 Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Notes: 1. This is the bottom view of the package. 2. The die attach paddle of the package is tied to ground (GND). Pin 1

1 GEC0/IO37RSB1

2 IO36RSB1

3 GEA0/IO34RSB1

4 IO22RSB1

7 IO24RSB1

8 IO33RSB1

9 IO26RSB1

10 IO32RSB1

11 IO27RSB1

12 IO29RSB1

13 IO30RSB1

14 FF/IO31RSB1

15 IO28RSB1

16 IO25RSB1

17 IO23RSB1

18 VCC

19 VCCIB1

20 IO17RSB1

21 IO14RSB1

22 TCK

23 TDI

24 TMS

25 VPUMP

26 TDO

27 TRST

28 VJTAG

29 IO11RSB0

30 IO10RSB0

31 IO09RSB0

32 IO08RSB0

33 VCCIB0

34 GND

35 VCC

36 IO07RSB0

37 IO06RSB0

38 GDA0/IO05RSB0

39 IO03RSB0

40 GDC0/IO01RSB0

41 IO12RSB1

42 IO13RSB1

43 IO15RSB1

44 IO16RSB1

45 IO18RSB1

46 IO19RSB1

47 IO20RSB1

48 IO21RSB1

IGLOO nano Low Power Flash FPGAs Revision 17 4-17 QN48 Pin Number AGLN030Z Function

1 IO82RSB1

2 GEC0/IO73RSB1

3 GEA0/IO72RSB1

4 GEB0/IO71RSB1

6 VCCIB1

7 IO68RSB1

8 IO67RSB1

9 IO66RSB1

10 IO65RSB1

11 IO64RSB1

12 IO62RSB1

13 IO61RSB1

14 FF/IO60RSB1

15 IO57RSB1

16 IO55RSB1

17 IO53RSB1

20 IO46RSB1

21 IO42RSB1

29 IO38RSB0

30 GDB0/IO34RSB0

31 GDA0/IO33RSB0

32 GDC0/IO32RSB0

36 IO25RSB0

37 IO24RSB0

38 IO22RSB0

39 IO20RSB0

40 IO18RSB0

41 IO16RSB0

42 IO14RSB0

43 IO10RSB0

44 IO08RSB0

45 IO06RSB0

46 IO04RSB0

47 IO02RSB0

48 IO00RSB0

Pin Number AGLN030Z Function

For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Notes: 1. This is the bottom view of the package. 2. The die attach paddle of the package is tied to ground (GND). Pin A1 Mark

IGLOO nano Low Power Flash FPGAs Revision 17 4-19 QN68 Pin Number AGLN015 Function

1 IO60RSB2

2 IO54RSB2

3 IO52RSB2

4 IO50RSB2

5 IO49RSB2

6 GEC0/IO48RSB2

7 GEA0/IO47RSB2

10 VCCIB2

11 IO46RSB2

12 IO45RSB2

13 IO44RSB2

14 IO43RSB2

15 IO42RSB2

16 IO41RSB2

17 IO40RSB2

18 FF/IO39RSB1

19 IO37RSB1

20 IO35RSB1

21 IO33RSB1

22 IO31RSB1

23 IO30RSB1

24 VCC

25 GND

26 VCCIB1

27 IO27RSB1

28 IO25RSB1

29 IO23RSB1

30 IO21RSB1

31 IO19RSB1

32 TCK

33 TDI

34 TMS

35 VPUMP

36 TDO

37 TRST

38 VJTAG

39 IO17RSB0

40 IO16RSB0

41 GDA0/IO15RSB0

42 GDC0/IO14RSB0

43 IO13RSB0

44 VCCIB0

45 GND

46 VCC

47 IO12RSB0

48 IO11RSB0

49 IO09RSB0

50 IO05RSB0

51 IO00RSB0

52 IO07RSB0

53 IO03RSB0

54 IO18RSB1

55 IO20RSB1

56 IO22RSB1

57 IO24RSB1

58 IO28RSB1

60 GND

62 IO32RSB1

63 IO34RSB1

64 IO36RSB1

65 IO61RSB2

66 IO58RSB2

67 IO56RSB2

68 IO63RSB2

IGLOO nano Low Power Flash FPGAs Revision 17 4-21 QN68 Pin Number AGLN030Z Function

2 IO80RSB1

3 IO78RSB1

4 IO76RSB1

5 GEC0/IO73RSB1

6 GEA0/IO72RSB1

7 GEB0/IO71RSB1

10 VCCIB1

11 IO68RSB1

12 IO67RSB1

13 IO66RSB1

14 IO65RSB1

15 IO64RSB1

16 IO63RSB1

17 IO62RSB1

18 FF/IO60RSB1

19 IO58RSB1

20 IO56RSB1

21 IO54RSB1

22 IO52RSB1

23 IO51RSB1

27 IO50RSB1

28 IO48RSB1

29 IO46RSB1

30 IO44RSB1

31 IO42RSB1

39 IO40RSB0

40 IO37RSB0

41 GDB0/IO34RSB0

42 GDA0/IO33RSB0

43 GDC0/IO32RSB0

47 IO31RSB0

48 IO29RSB0

49 IO28RSB0

50 IO27RSB0

51 IO25RSB0

52 IO24RSB0

53 IO22RSB0

54 IO21RSB0

55 IO19RSB0

56 IO17RSB0

57 IO15RSB0

58 IO14RSB0

59 VCCIB0

61 VCC

62 IO12RSB0

63 IO10RSB0

64 IO08RSB0

65 IO06RSB0

66 IO04RSB0

67 IO02RSB0

68 IO00RSB0

For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. Note: This is the top view of the package. 100

IGLOO nano Low Power Flash FPGAs Revision 17 4-23 VQ100 Pin Number AGLN030Z Function 1G N D

2 IO82RSB1

3 IO81RSB1

4 IO80RSB1

5 IO79RSB1

6 IO78RSB1

7 IO77RSB1

8 IO76RSB1

10 IO75RSB1

11 IO74RSB1

12 GEC0/IO73RSB1

13 GEA0/IO72RSB1

14 GEB0/IO71RSB1

15 IO70RSB1

16 IO69RSB1

17 VCC

18 VCCIB1

19 IO68RSB1

20 IO67RSB1

21 IO66RSB1

22 IO65RSB1

23 IO64RSB1

24 IO63RSB1

25 IO62RSB1

26 IO61RSB1

27 FF/IO60RSB1

28 IO59RSB1

29 IO58RSB1

30 IO57RSB1

31 IO56RSB1

32 IO55RSB1

33 IO54RSB1

34 IO53RSB1

35 IO52RSB1

36 IO51RSB1

37 VCC

38 GND

39 VCCIB1

40 IO49RSB1

41 IO47RSB1

42 IO46RSB1

43 IO45RSB1

44 IO44RSB1

45 IO43RSB1

46 IO42RSB1

47 TCK

48 TDI

49 TMS

51 GND

52 VPUMP

54 TDO

55 TRST

56 VJTAG

57 IO41RSB0

58 IO40RSB0

59 IO39RSB0

60 IO38RSB0

61 IO37RSB0

62 IO36RSB0

63 GDB0/IO34RSB0

64 GDA0/IO33RSB0

65 GDC0/IO32RSB0

66 VCCIB0

67 GND

68 VCC

69 IO31RSB0

70 IO30RSB0

71 IO29RSB0

72 IO28RSB0

73 IO27RSB0

74 IO26RSB0

75 IO25RSB0

76 IO24RSB0

77 IO23RSB0

78 IO22RSB0

79 IO21RSB0

80 IO20RSB0

81 IO19RSB0

82 IO18RSB0

83 IO17RSB0

84 IO16RSB0

85 IO15RSB0

86 IO14RSB0

87 VCCIB0

88 GND

89 VCC

90 IO12RSB0

91 IO10RSB0

92 IO08RSB0

93 IO07RSB0

94 IO06RSB0

95 IO05RSB0

96 IO04RSB0

97 IO03RSB0

98 IO02RSB0

99 IO01RSB0

100 IO00RSB0

Pin Number AGLN060 Function 1G N D

2 GAA2/IO51RSB1

3 IO52RSB1

4 GAB2/IO53RSB1

5 IO95RSB1

6 GAC2/IO94RSB1

7 IO93RSB1

8 IO92RSB1

10 GFB1/IO87RSB1

11 GFB0/IO86RSB1

12 VCOMPLF

13 GFA0/IO85RSB1

14 VCCPLF

15 GFA1/IO84RSB1

16 GFA2/IO83RSB1

19 GEC1/IO77RSB1

20 GEB1/IO75RSB1

21 GEB0/IO74RSB1

22 GEA1/IO73RSB1

23 GEA0/IO72RSB1

24 VMV1

25 GNDQ

26 GEA2/IO71RSB1

27 FF/GEB2/IO70RSB1

28 GEC2/IO69RSB1

29 IO68RSB1

30 IO67RSB1

31 IO66RSB1

32 IO65RSB1

33 IO64RSB1

34 IO63RSB1

35 IO62RSB1

36 IO61RSB1

40 IO60RSB1

41 IO59RSB1

42 IO58RSB1

43 IO57RSB1

44 GDC2/IO56RSB1

45* GDB2/IO55RSB1

46 GDA2/IO54RSB1

50 VMV1

57 GDA1/IO49RSB0

58 GDC0/IO46RSB0

59 GDC1/IO45RSB0

60 GCC2/IO43RSB0

61 GCB2/IO42RSB0

62 GCA0/IO40RSB0

63 GCA1/IO39RSB0

64 GCC0/IO36RSB0

65 GCC1/IO35RSB0

70 GBC2/IO29RSB0

Pin Number AGLN060 Function

71 GBB2/IO27RSB0

72 IO26RSB0

73 GBA2/IO25RSB0

74 VMV0

75 GNDQ

76 GBA1/IO24RSB0

77 GBA0/IO23RSB0

78 GBB1/IO22RSB0

79 GBB0/IO21RSB0

80 GBC1/IO20RSB0

81 GBC0/IO19RSB0

84 IO15RSB0

85 IO13RSB0

86 IO11RSB0

90 IO10RSB0

91 IO09RSB0

93 GAC1/IO07RSB0

94 GAC0/IO06RSB0

95 GAB1/IO05RSB0

96 GAB0/IO04RSB0

97 GAA1/IO03RSB0

98 GAA0/IO02RSB0

Pin Number AGLN060 Function Note: *The bus hold attribute (hold previous I/O state in Flash*Freeze mode) is not supported for pin 45 in AGLN060- VQ100.

IGLOO nano Low Power Flash FPGAs Revision 17 4-25 VQ100 Pin Number AGLN060Z Function 1G N D 45* GDB2/IO55RSB1 Pin Number AGLN060Z Function Pin Number AGLN060Z Function Note: *The bus hold attribute (hold previous I/O state in Flash*Freeze mode) is not supported for pin 45 in AGLN060Z- VQ100.

Pin Number AGLN125 Function 1G N D

2 GAA2/IO67RSB1

3 IO68RSB1

4 GAB2/IO69RSB1

5 IO132RSB1

6 GAC2/IO131RSB1

7 IO130RSB1

8 IO129RSB1

10 GFB1/IO124RSB1

11 GFB0/IO123RSB1

13 GFA0/IO122RSB1

15 GFA1/IO121RSB1

16 GFA2/IO120RSB1

19 GEC0/IO111RSB1

20 GEB1/IO110RSB1

21 GEB0/IO109RSB1

22 GEA1/IO108RSB1

23 GEA0/IO107RSB1

26 GEA2/IO106RSB1

27 FF/GEB2/IO105RSB1

28 GEC2/IO104RSB1

29 IO102RSB1

30 IO100RSB1

31 IO99RSB1

32 IO97RSB1

33 IO96RSB1

34 IO95RSB1

35 IO94RSB1

36 IO93RSB1

40 IO87RSB1

41 IO84RSB1

42 IO81RSB1

43 IO75RSB1

44 GDC2/IO72RSB1

45 GDB2/IO71RSB1

46 GDA2/IO70RSB1

57 GDA1/IO65RSB0

58 GDC0/IO62RSB0

59 GDC1/IO61RSB0

60 GCC2/IO59RSB0

61 GCB2/IO58RSB0

62 GCA0/IO56RSB0

63 GCA1/IO55RSB0

64 GCC0/IO52RSB0

65 GCC1/IO51RSB0

69 IO47RSB0

70 GBC2/IO45RSB0

71 GBB2/IO43RSB0

72 IO42RSB0

Pin Number AGLN125 Function

73 GBA2/IO41RSB0

76 GBA1/IO40RSB0

77 GBA0/IO39RSB0

78 GBB1/IO38RSB0

79 GBB0/IO37RSB0

80 GBC1/IO36RSB0

81 GBC0/IO35RSB0

82 IO32RSB0

83 IO28RSB0

84 IO25RSB0

85 IO22RSB0

86 IO19RSB0

90 IO15RSB0

91 IO13RSB0

92 IO11RSB0

93 IO09RSB0

94 IO07RSB0

95 GAC1/IO05RSB0

96 GAC0/IO04RSB0

97 GAB1/IO03RSB0

98 GAB0/IO02RSB0

99 GAA1/IO01RSB0

100 GAA0/IO00RSB0

Pin Number AGLN125 Function

IGLOO nano Low Power Flash FPGAs Revision 17 4-27 VQ100 Pin Number AGLN125Z Function 1G N D

Pin Number AGLN250 Function 1G N D

2 GAA2/IO67RSB3

3 IO66RSB3

4 GAB2/IO65RSB3

5 IO64RSB3

6 GAC2/IO63RSB3

7 IO62RSB3

8 IO61RSB3

10 GFB1/IO60RSB3

11 GFB0/IO59RSB3

13 GFA0/IO57RSB3

15 GFA1/IO58RSB3

16 GFA2/IO56RSB3

18 VCCIB3

19 GFC2/IO55RSB3

20 GEC1/IO54RSB3

21 GEC0/IO53RSB3

22 GEA1/IO52RSB3

23 GEA0/IO51RSB3

24 VMV3

26 GEA2/IO50RSB2

27 FF/GEB2/IO49RSB2

28 GEC2/IO48RSB2

29 IO47RSB2

30 IO46RSB2

31 IO45RSB2

32 IO44RSB2

33 IO43RSB2

34 IO42RSB2

35 IO41RSB2

36 IO40RSB2

39 VCCIB2

40 IO39RSB2

41 IO38RSB2

42 IO37RSB2

43 GDC2/IO36RSB2

44 GDB2/IO35RSB2

45 GDA2/IO34RSB2

46 GNDQ

50 VMV2

57 GDA1/IO33RSB1

58 GDC0/IO32RSB1

59 GDC1/IO31RSB1

60 IO30RSB1

61 GCB2/IO29RSB1

62 GCA1/IO27RSB1

63 GCA0/IO28RSB1

64 GCC0/IO26RSB1

65 GCC1/IO25RSB1

66 VCCIB1

69 IO24RSB1

70 GBC2/IO23RSB1

71 GBB2/IO22RSB1

72 IO21RSB1

Pin Number AGLN250 Function

73 GBA2/IO20RSB1

74 VMV1

76 GBA1/IO19RSB0

77 GBA0/IO18RSB0

78 GBB1/IO17RSB0

79 GBB0/IO16RSB0

80 GBC1/IO15RSB0

81 GBC0/IO14RSB0

82 IO13RSB0

83 IO12RSB0

84 IO11RSB0

85 IO10RSB0

86 IO09RSB0

90 IO08RSB0

91 IO07RSB0

92 IO06RSB0

93 GAC1/IO05RSB0

94 GAC0/IO04RSB0

95 GAB1/IO03RSB0

96 GAB0/IO02RSB0

97 GAA1/IO01RSB0

98 GAA0/IO00RSB0

99 GNDQ

100 VMV0

Pin Number AGLN250 Function

IGLOO nano Low Power Flash FPGAs Revision 17 4-29 VQ100 Pin Number AGLN250Z Function 1G N D Pin Number AGLN250Z Function Pin Number AGLN250Z Function

5 – Datasheet Information List of Changes The following table lists critical changes that were made in each version of the IGLOO nano datasheet. Revision Changes Page Revision 17 (May 2013) Deleted details related to Ambient temperature from "Enhanced Commercial Temperature Range" , "IGLOO nano Ordering Information" , "Temperature Grade Offerings", and Table 2-2 • Recommended Operating Conditions1 to remove ambiguities arising due to the same, and modified Note 2 (SAR 47063). I, III, IV, and 2-2 Revision 16 (December 2012) The "IGLOO nano Ordering Information" section has been updated to mention "Y" as "Blank" mentioning "Device Does Not Includ e License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio" (SAR 43174). III The note in Table 2-100 • IGLOO nano CCC/PLL Specification and Table 2-101 • IGLOO nano CCC/PLL Specification referring the reader to SmartGen was revised to refer instead to the online help associated with the core (SAR 42565). 2-70, 2-71 Live at Power-Up (LAPU) has been replaced with ’Instant On’. NA Revision 15 (September 2012) The status of the AGLN125 device has been mo dified from ’Advance’ to ’Production’ in the "IGLOO nano Device Status" section (SAR 41416). II Libero Integrated Design Environment (IDE) was changed to Libero System-on-Chip (SoC) throughout the document (SAR 40274). NA Revision 14 (September 2012) The "Security" section was modified to clarify that Microsemi does not support read-back of programmed data. 1-2 Revision 13 (June 2012) Figure Figure 2-34 • FIFO Read and Figure 2-35 • FIFO Write have been added (SAR 34842). 2-82 The following sentence was removed from the "VMVx I/O Supply Voltage (quiet)" section in the "Pin Descriptions" section: "Within the package, the VMV plane is decoupled from the simultaneous switching noise originating from the output buffer VCCI domain" and replaced with “Within the package, the VMV plane biases the input stage of the I/Os in the I/O banks” (SAR 38319). The datasheet mentions that "VMV pins must be connected to the corresponding VCCI pins" for an ESD enhancement. 3-1 Revision 12 (March 2012) The "In-System Programming (ISP) and Security" section and "Security" section were revised to clarify that although no existing security measures can give an absolute guarantee, Microsemi FPGAs implement the best security available in the industry (SAR 34663). I, 1-2 Notes indicating that AGLN015 is not recommended for new designs have been added (SAR 35759). Notes indicating that nano-Z devices are not recommended for new designs have been added. The "Devices Not Recommended For New Designs" section is new (SAR 36759). II, III The Y security option and Licensed DPA Logo were added to the "IGLOO nano Ordering Information" section. The trademarked Licensed DPA Logo identifies that a product is covered by a DPA counter-measures license from Cryptography Research (SAR 34722). III The following sentence was removed from the "Advanced Architecture" section : "In addition, extensive on-chip programming circ uitry enables rapid, single-voltage (3.3 V) programming of IGLOO nano devices via an IEEE 1532 JTAG interface" (SAR 34683). 1-3

(continued) The "Specifying I/O States During Programming" section is new (SAR 34694). 1-9 The reference to guidelines for global spines and VersaTile rows, given in the "Global Clock Contribution—P CLOCK" section , was corrected to t he "Spine Architecture" section of the Global Resources chapter in the IGLOO nano FPGA Fabric User's Guide (SAR 34732). 2-12 Figure 2-4 has been modified for DIN waveform; the Rise and Fall time label has been changed to tDIN (37106). 2-16 The AC Loading figures in the "Single-Ended I/O Characteristics" section were updated to match tables in the "Summary of I/O Timing Characteristics – Default I/O Software Settings" section (SAR 34885). 2-26, 2-20 The notes regarding drive strength in the "Summary of I/O Timing Characteristics – Default I/O Software Settings" section, "3.3 V LVCMOS Wide Range" section and "1.2 V LVCMOS Wide Range" section tables were revised for clarification. They now state that the minimum drive strength for the default software configuration when run in wide range is ±100 µA. The drive strength displayed in so ftware is supported in normal range only. For a detailed I/V curve, refer to the IBIS models (SAR 34765). 2-20, 2-29, 2-40 Added values for minimum pulse width and removed the FRMAX row from Table 2-88 through Table 2-99 in the "Global Tree Timing Characteristics" section. Use the software to determine the FRMAX for the device you are using (SAR 36953). 2-64 to 2-69 Table 2-100 • IGLOO nano CCC/PLL Specification and Table 2-101 • IGLOO nano CCC/PLL Specification were updated. A note was added indicating that when the CCC/PLL core is generated by Mircosemi core generator software, not all delay values of the specified delay increments are available (SAR 34817). 2-70 and 2-71 The port names in the SRAM "Timing Waveforms" , SRAM "Timing Characteristics" tables, Figure 2-36 • FIFO Reset , and the FIFO "Timing Characteristics" tables were revised to ensure consistency with the software names (SAR 35754). Reference was made to a new application note, Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-Based cSoCs and FPGAs, which covers these cases in detail (SAR 34865). 2-74, 2-77, 2-85 The "Pin Descriptions" chapter has been added (SAR 34770). 3-1 Package names used in the "Package Pin Assignments" section were revised to match standards given in Package Mechanical Drawings (SAR 34770). 4-1 Revision 11 (Jul 2010) The status of the AGLN060 device has changed from Advance to Production. II The values for PAC1, PAC2, PAC3, and PAC4 were updated in Table 2-15 • Different Components Contributing to Dynamic Power Consumption in IGLOO nano Devices for 1.5 V core supply voltage (SAR 26404). 2-10 The values for PAC1, PAC2, PAC3, and PAC4 were updated in Table 2-17 • Different Components Contributing to Dynamic Power Consumption in IGLOO nano Devices for 1.2 V core supply voltage (SAR 26404). 2-11 July 2010 The versioning system for datasheet s has been changed. Datasheets are assigned a revision number that increments each time the datasheet is revised. The "IGLOO nano Device Status" table on page II indicates the status for each device in the device family. N/A Revision Changes Page

IGLOO nano Low Power Flash FPGAs Revision 17 5-3 Revision 10 (Apr 2010) References to differential inputs were re moved from the datasheet, since IGLOO nano devices do not support differential inputs (SAR 21449). N/A A parenthetical note, "hold previous I/O state in Flash*Freeze mode," was added to each occurrence of bus hold in the datasheet (SAR 24079). N/A The "In-System Programming (I SP) and Security" section was revised to add 1.2 V programming. I The note connec ted with the "IGLOO nano Ordering Information" table was revised to clarify features not available for Z feature grade devices. III The "IGLOO nano Device Status" table is new. II The definition of C in the "Temperature Grade Offerings" table was changed to "extended commercial temperature range." IV

1.2 V wide range was added to the list of voltage ranges in the "I/Os with Advanced I/O

Standards" section. 1-8 A note was added to Table 2-2 • Recommended Operating Conditions 1 regarding switching from 1.2 V to 1.5 V core volt age for in-system pr ogramming. The VJTAG voltage for programming V2 and V5 devices was revised (SAR 25213). The maximum value for VPUMP programming voltage (operation mode) was changed from 3.45 V to 3.6 V (SAR 25220). 2-2 Table 2-6 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ = 70°C, VCC = 1.425 V) and Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ = 70°C, VCC = 1.14 V) were updated. Table 2-8 • Power Supply State per Mode is new. 2-6, 2-7 The tables in the "Quiescent Supply Current" section were updated (SAR 24882 and SAR 24112). 2-7 VJTAG was removed from Table 2-10 • Quiescent Supply Current (IDD) Characteristics, IGLOO nano Sleep Mode* (SARs 24112, 24882, and 79503). 2-8 The note stating what was included in I DD was removed from Table 2-11 • Quiescent Supply Current (IDD) Characteristics, IGLOO nano Shutdown Mode . The note, "per VCCI or VJTAG bank" was removed from Table 2-12 • Quiescent Supply Current (IDD), No IGLOO nano Flash*Freeze Mode 1. The note giving I DD was changed to "I DD = NBANKS * ICCI + ICCA." 2-8 The values in Table 2-13 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings and Table 2-14 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings 1 were updated. Wide range support information was added. 2-9 Revision Changes Page

(continued) The following tables were updated with current available information. The equivalent software default drive strength option was added. Table 2-21 • Summary of Maximum and Minimum DC Input and Output Levels Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings Table 2-26 • Summary of I/O Timing Characteristics—Software Default Settings Table 2-28 • I/O Output Buffer Maximum Resistances1 Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances Table 2-30 • I/O Short Currents IOSH/IOSL Timing tables in the "Single-Ended I/O Characteristics" section, including new tables for 3.3 V and 1.2 V LVCMOS wide range. Table 2-40 • Minimum and Maximum DC Input and Output Levels for LVCMOS 3.3 V Wide Range Table 2-63 • Minimum and Maximum DC Input and Output Levels Table 2-67 • Minimum and Maximum DC Input and Output Levels (new) 2-19 through 2-40 The formulas in the notes to Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances were revised (SAR 21348). 2-24 The text introducing Table 2-31 • Duration of Short Circuit Event before Failure was revised to state six months at 100° instead of three months at 110° for reliability concerns. The row for 110° was removed from the table. 2-25 The following sentence was deleted from the "2.5 V LVCMOS" section (SAR 24916): "It uses a 5-V tolerant input buffer and push-pull output buffer." 2-32 The F DDRIMAX and F DDOMAX values were added to tables in the "DDR Module Specifications" section (SAR 23919). A note was added stating that DDR is not supported for AGLN010, AGLN015, and AGLN020. 2-51 Tables in the "Global Tree Timing Characteristics" section were updated with new information available. 2-64 Table 2-100 • IGLOO nano CCC/PLL Specification and Table 2-101 • IGLOO nano CCC/PLL Specification were revised (SAR 79390). 2-70, 2-71 Tables in the SRAM "Timing Characteristics" section and FIFO "Timing Characteristics" section were updated with new information available. 2-77, 2-85 Table 3-3 • TRST and TCK Pull-Down Recommendations is new. 3-4 A note was added to the "CS81" pin tables for AGLN060, AGLN060Z, AGLN125, AGLN125Z, AGLN250, and AGLN250Z indicating that pins F1 and F2 must be grounded (SAR 25007). 4-9, through 4-14 A note was added to the "CS81" and "VQ100" pin tables for AGLN060 and AGLN060Z stating that bus hold is not available for pin H7 or pin 45 (SAR 24079). 4-9, 4-24 The AGLN250 function for pin C8 in the "CS81" table was revised (SAR 22134). 4-13 Revision Changes Page

IGLOO nano Low Power Flash FPGAs Revision 17 5-5 Revision / Version Changes Page Revision 9 (Mar2010) Product Brief Advance v0.9 Packaging Advance v0.8 All product tables and pin tables were updated to show clearly that AGLN030 is available only in the Z f eature grade at this time. The nano-Z feature grade devices are designated with a Z at the end of the part number. N/A Revision 8 (Jan 2009) The "Reprogrammable Flash Technology" section was revised to add "250 MHz (1.5 V systems) and 160 MHz (1.2 V systems) System Performance." I Product Brief Advance v0.8 The note for AGLN030 in the "IGLOO nano Devices" table and "I/Os Per Package" table was revised to remove the statement regarding package compatibility with lower density nano devices. II, II The "I/Os with Advanced I/O Standards" section was revised to add definitions for hot-swap and cold-sparing. 1-8 Packaging Advance v0.7 The "UC81", "CS81", "QN48", and "QN68" pin tables for AGLN030 are new. 4-5, 4-8, 4-17, 4-21 The "CS81"pin table for AGLN060 is new. 4-9 The "CS81" and "VQ100" pin tables for AGLN060Z are new. 4-10, 4-25 The "CS8" and "VQ100" pin tables for AGLN125Z are new. 4-12, 4-27 The "CS81" and "VQ100" pin tables for AGLN250Z is new. 4-14, 4-29 Revision 7 (Apr 2009) Product Brief Advance v0.7 DC and Switching Characteristics Advance v0.3 The –F speed grade is no longer of fered for IGLOO nano devices and was removed from the datasheet. N/A Revision 6 (Mar 2009) Packaging Advance v0.6 The "VQ100" pin table for AGLN030 is new. 4-23 Revision 5 (Feb 2009) Packaging Advance v0.5 The "100-Pin QFN" section was removed. N/A Product Brief Advance v0.6 "IGLOO nano Devices" table was updated to change the maximum user I/Os for AGLN030 from 81 to 77. II The "Device Marking" section is new. III Revision 3 (Feb 2009) Product Brief Advance v0.5 The following table note was removed from "IGLOO nano Devices" table : "Six chip (main) and three quadrant global networks are available for AGLN060 and above." II The CS81 package was added for AGLN250 in the "IGLOO nano Products Available in the Z Feature Grade" table. IV Packaging Advance v0.4 The "UC81" and "CS81" pin tables for AGLN020 are new. 4-4, 4-7 The "CS81" pin table for AGLN250 is new. 4-13

Revision 2 (Dec 2008) Product Brief Advance v0.4 The second table note in "IGLOO nano Devices" table was revised to state, "AGLN060, AGLN125, and AGLN250 in th e CS81 package do not support PLLs. AGLN030 and smaller devices do not support this feature." II The I/Os per package for CS81 were revised to 60 for AGLN060, AGLN125, and AGLN250 in the "I/Os Per Package"table. II Packaging Advance v0.3 The "UC36" pin table is new. 4-2 Revision 1 (Nov 2008) Product Brief Advance v0.3 The "Advanced I/Os" section was updated to include wide power supply voltage support for 1.14 V to 1.575 V. I The AGLN030 device was added to product tables and replaces AGL030 entries that were formerly in the tables. IV The "I/Os Per Package" table was updated for the CS81 package to change the number of I/Os for AGLN060, AGLN125, and AGLN250 from 66 to 64. II The "Wide Range I/O Support" section is new. 1-8 The table notes and references were revised in Table 2-2 • Recommended Operating Conditions 1. VMV was included with VCCI and a table note was added stating, "VMV pins must be connecte d to the corresponding VCCI pins. See Pin Descriptions for further information." Please review carefully. 2-2 VJTAG was added to the list in the table note for Table 2-9 • Quiescent Supply Current (IDD) Characteristics, IGLOO nano Flash*Freeze Mode* . Values were added for AGLN010, AGLN015, and AGLN030 for 1.5 V. 2-7 VCCI was removed from the list in the table note for Table 2-10 • Quiescent Supply Current (IDD) Characteristics, IGLOO nano Sleep Mode*. 2-8 Values for ICCA current were updated for AGLN010, AGLN015, and AGLN030 in Table 2-12 • Quiescent Supply Current (IDD), No IGLOO nano Flash*Freeze Mode1. 2-8 Values for PAC1 and PAC2 were added to Table 2-15 • Different Components Contributing to Dynamic Power Consumption in IGLOO nano Devices and Table 2-17 • Different Components Contributing to Dynamic Power Consumption in IGLOO nano Devices. 2-10, 2-11 Table notes regarding wide range support were added to Table 2-21 • Summary of Maximum and Minimum DC Input and Output Levels. 2-19

1.2 V LVCMOS wide range values were added to Table 2-22 • Summary of

Maximum and Minimum DC Input Levels and Table 2-23 • Summary of AC Measuring Points. 2-19, 2-20 The following table note was added to Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings and Table 2-26 • Summary of I/O Timing Characteristics—Sof tware Default Settings : "All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide r ange, as specified in the JESD8-B specification." 2-21 3.3 V LVCMOS Wide Range and 1.2 V Wide Range were added to Table 2-28 • I/O Output Buffer Maximum Resistances 1 and Table 2-30 • I/O Short Currents IOSH/IOSL. 2-23, 2-24 Revision / Version Changes Page

IGLOO nano Low Power Flash FPGAs Revision 17 5-7 Packaging Advance v0.2 Note 2 for the "QN48", "QN68", and "100-Pin QFN" pin diagrams was changed to "The die attach paddle of the package is tied to ground (GND)." 4-16, 4-19 The "VQ100" pin diagram was revised to move the pin IDs to the upper left corner instead of the upper right corner. 4-23 Revision 0 (Oct 2008) Product Brief Advance v0.2 The following tables and sections were updated to add the UC81 and CS81 packages for AGL030: "IGLOO nano Devices" "I/Os Per Package" "IGLOO nano Products Available in the Z Feature Grade" "Temperature Grade Offerings" N/A The "I/Os Per Package" table was updated to add the following information to table note 4: "For nano devices, the VQ100 package is offered in both leaded and RoHS-compliant versions. All other packages are RoHS-compliant only." II The "IGLOO nano Products Available in the Z Feature Grade" section was updated to remove QN100 for AGLN250. IV The device architecture figures, Figure 1-3 • IGLOO Device Architecture Overview with Two I/O Banks (AGLN060, AGLN125) through Figure 1-4 • IGLOO Device Architecture Overview with Four I/O Banks (AGLN250), were revised. Figure 1-1 • IGLOO Device Architecture Overview with Two I/O Banks and No RAM (AGLN010 and AGLN030) is new. 1-4 through 1-5 The "PLL and CCC" section was revised to include information about CCC-GLs in AGLN020 and smaller devices. 1-7 The "I/Os with Advanced I/O Standards" section was revised to add information about IGLOO nano devices supporting double-data-rate applications. 1-8 Revision / Version Changes Page

In order to provide the latest information to designers, some datasheet parameters are published before data has been fully characterized from silicon devices. The data provided for a given device, as highlighted in the "IGLOO nano Device Status" table on page II , is designated as either "Product Brief," "Advance," "Preliminary," or "Production." The definitions of these categories are as follows: Product Brief The product brief is a summarized version of a data sheet (advance or production) and contains general product information. This document gives an overview of specific device and family information. Advance This version contains initial estimated information based on simulation, other products, devices, or speed grades. This information can be used as estimates, bu t not for production. This label only applies to the DC and Switching Characteristics chapter of the da tasheet and will only be used when the data has not been fully characterized. Preliminary The datasheet contains information based on simulation and/or initial characterization. The information is believed to be correct, but changes are possible. Unmarked (production) This version contains information that is considered to be final. Export Administration Regulations (EAR) The products described in this document are subj ect to the Export Administ ration Regulations (EAR). They could require an approved export license prior to export from the United States. An export includes release of product or disclosure of technology to a foreign national inside or outside the United States. Safety Critical, Life Support, and High-Reliability Applications Policy The Microsemi products described in this advance status document may not have completed Microsemi’s qualification process. Microsemi may amend or enhance products during the product introduction and qualification process, resulting in ch anges in device functionality or performance. It is the responsibility of each customer to ensure the fitness of any Microsemi product (but especially a new product) for a particular purpose, including approp riateness for safety-critical, life-support, and other high-reliability applications. Consult Microsemi’s Terms and Conditions for specific liability exclusions relating to life-support applications. A reliability report covering all of the Microsemi SoC Products Group’s products is at http://www.microsemi.com/socdocuments/ORT_Report.pdf. Microsemi also offers a variety of enhanced qualificatio n and lot acceptance screening procedures. Contact your local Microsemi sales office for additional reliability information.

51700110-17/6.13 © 2013 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor solutions for: aerospace, defense and security ; enterprise and communications; and industrial and alternative energy markets. Products include high-performance, high-reliability analog and RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and complete subsystems. Microsemi is headquarter ed in Aliso Viejo, Calif. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996