AG2136 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 1 - DESCRIPTION FEATURES The AG2136 is a high voltage, high speed power MOSFET and IGBT drivers with a three independent high and low side referenced output channels for 3-phase applications. The floating channels can be used to drive N -channel power MOSFETs or IGBTs in the high side configuration which operates up to 600V. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over -current or under-voltage shutdown has occurred. Over -current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross -conduction. Propagation delays are matched to simplify use in high frequency applications. AG2136 is available in a SOP28 package. Fully operational to +600 V 3.3 V logic compatible dV/dt Immunity ±50 V/nsec Floating channel designed for bootstrap operation Gate drive supply range from 10 V to 20 V UVLO for all channels Cross-conduction prevention logic Over-current shutdown turns off all six drivers Externally programmable delay for automatic fault clear Independent 3 half-bridge drivers - 7V negative Vs ability Matched propagation delay for all channels Available in a SOP28 package. APPLICATION Motor Control Air Conditioners/ Washing Machines General Purpose Inverters Micro/Mini Inverter Drives ORDERING INFORMATION TYPICAL APPLICATION CIRCUIT Package Type Part Number SOP28 (wide body) SPQ: 1,000pcs/Reel M28 AG2136M28R AG2136M28VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products
AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 VCC Low side and logic fixed supply voltage
HIN1 Signal Input for 1 Phase High-side HIN2 Signal Input for 2 Phase High-side HIN3 Signal Input for 3 Phase High-side LIN1 Signal Input for 1 Phase Low-side LIN2 Signal Input for 2 Phase Low-side LIN3 Signal Input for 3 Phase Low-side FAULT Indicates over-current (ITRIP)or low-side under-voltage lockout 9 ITRIP Analog input for overcurrent shutdown.
10 EN Logic input to enable I/O functionality
11 RCIN External RC network input used to define FAULT CLEAR delay
12 VSS Logic ground
13 COM Low side gate drivers return
14 LO3 Low side gate driver outputs for 3 Phase
15 LO2 Low side gate driver outputs for 2 Phase
16 LO1 Low side gate driver outputs for 1 Phase
18 VS3 High voltage floating supply return for 3 Phase
19 HO3 High side gate driver outputs for 3 Phase
20 VB3 High side floating supply for 3 Phase
22 VS2 High voltage floating supply return for 2 Phase
23 HO2 High side gate driver outputs for 2 Phase
24 VB2 High side floating supply for 2 Phase
26 VS1 High voltage floating supply return for 1 Phase
27 HO1 High side gate driver outputs for 1 Phase
28 VB1 High side floating supply for 1 Phase
AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS Exceeding these ratings may damage the device. The absolute maximum ratings are stress ratings only at TA=25°C, unless otherwise specified. VB1,2,3, High Side Floating Supply -0.3V ~ 620V VS1,2,3, High Side Floating Supply Return VB -20V ~ VB +0.3V VHO1,2,3, High Side Gate Drive Output VS -0.3V ~ VB +0.3V VCC, Low Side and Main Power Supply -0.3V ~ 20V VLO1,2,3, Low Side Gate Drive Output COM-0.3V ~ VCC +0.3V VIN, Logic Input of HIN & LIN VSS -0.3V ~ VCC +0.3V VSS, Logic Ground VCC -20V~ VCC +0.3V VRCIN, RCIN input voltage VSS ~ VCC VFLT, AFULT Output Voltage VSS -0.3V ~ VCC +0.3V dVS/dt, Allowable Offset Supply Voltage Transient 50V/ns ESD, HBM Model 2.5kV ESD, Machine Model 200V RthJA, Thermal Resistance Junction to Ambient SOP28 78℃/W TJ, Junction Temperature 150℃ TS, Storage Temperature -55℃~150℃ TL, Lead Temperature (Soldering, 10 seconds) 300℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min. Max. Units High Side Floating Supply VB1,2,3 VS +10 VS +20 V High Side Floating Supply Return VS1,2,3 COM-7 600 High Side Gate Drive Output Voltage VHO1,2,3 VS1,2,3 VB1,2,3 Low Side Supply VCC 10 20 Low Side Gate Drive Output Voltage VLO1,2,3 0 VCC Logic Input Voltage( HIN & LIN ) VIN 0 VCC Logic Ground VSS -5 5 RCIN Input Voltage VRCIN VSS VCC FAULT Output Voltage VFLT VSS VCC Ambient Temperature TA -40 125 ℃
AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 4 - DYNAMIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS) = 15V, CL = 1000pF and TA = 25°C, unless otherwise specified. Parameter Symbol Min Typ. Max Units Turn-On Propagation Delay ton 400 530 750 ns Turn-Off Propagation Delay toff 400 530 750 Turn-On Rising Time tr - 125 190 Turn-Off Fall Time tf - 50 75 Input Filter Time ( HIN & LIN ) tIN,FLT 200 350 510 Enable Low To Output Shutdown Propagation Delay tEN 350 460 650 Enable Input Filter Time tEN,FLT 100 200 - UVCC Filter Time tUVCC - 7 - us UVBS Filter Time tUVBS - 7 - UVCC to FAULT Shutdown Propagation Delay tUVCC,FO - 7 - UVCC to LO Shutdown Propagation Delay tUVCC,LO - 7 - UVBS to HO Shutdown Propagation Delay tUVBS,HO - 7 - FAULT Output Duration Time (RCIN: C = 1nF, R = 2 MΩ) tFOd 1.3 1.65 2 ms ITRIP to Output Shutdown Propagation Delay tITRIP 420 620 970 ns ITRIP Filter Time tIT,FLT - 400 - ITRIP to FAULT Propagation Delay tFO 400 600 950 Deadtime DT 190 275 420 DT Matching MDT - - 60 Delay Matching Time (tON, tOFF) MT - - 50 Pulse Width DistortionNOTE1 PM - - 75 NOTE1: PM is defined as PWIN-PWOUT
AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 5 - STATIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. Parameter Symbol Min Typ. Max Units VCC Supply Under Voltage Positive Going Threshold VUVCC+ 8 8.9 9.8 V VCC Supply Under Voltage Negative Going Threshold VUVCC- 7.4 8.2 9.0 VCC Supply Under Voltage Hysteresis VUVCCHY 0.3 0.7 - High-Side Floating Supply Leakage Current ILK - - 50 μA Quiescent VBS Supply Current IQBS - 70 120 Quiescent VCC Supply Current IQCC - 1 2 mA Operating VBS Supply Current IPBS - 400 600 μA Operating VCC Supply Current (per 1phase) IPCC - 1.3 1.8 mA High Level Output Voltage Drop, VBIAS - VO VOH - 0.9 1.4 V Low Level Output Voltage Drop, VO VOL - 0.4 0.6 Output High Short Circuit Pulsed Current IO+ 120 200 - mA Output Low Short Circuit Pulsed Current IO- 250 350 - High Level Input Threshold Voltage VIH 2.5 - - V Low Level Input Threshold Voltage VIL - - 0.8 Input Clamp Voltage( HIN , LIN , ITRIP, EN) VCLAMP 5.2 5.6 5.9 Input Bias Current (HO = High) IHIN+ - 150 200 μA Input Bias Current (HO = Low) IHIN- - 110 150 Input Bias Current (LO = High) ILIN+ - 150 200 Input Bias Current (LO = Low) ILIN- - 110 150 RCIN Positive Going Threshold VRCIN,TH - 8 - V RCIN Hysteresis VRCIN,HY - 3 - RCIN Input Bias Current IRCIN - - 1 μA RCIN Low On Resistance RRCIN,ON - 50 100 Ω ITRIP Positive Going Threshold VIT,TH+ 0.42 0.46 0.5 V ITRIP Negative Going Threshold VIT,TH- - 0.4 0.49 ITRIP Hysteresis VIT,HY - 0.06 - “High” ITRIP Input Bias Current IITRIP+ - 5 40 μA “Low” ITRIP Input Bias Current IITRIP- - - 1 Enable Positive Going Threshold VEN,TH+ - - 2.5 V Enable Negative Going Threshold VEN,TH- 0.8 - - “High” Enable Input Bias Current IEN+ - 5 40 μA “Low” Enable Input Bias Current IEN- - - 1 FAULT Low On Resistance RFO,ON - 50 100 Ω
AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 6 - BLOCK DIAGRAM
AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 7 - FUNCTION TIMING DIAGRAM Fig.1 Switching timing waveform Fig.2 Input/Output timing waveform
AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 12 -
PACKAGE INFORMATION
Dimension in SOP28 (Unit: mm) Symbol Min. Max. A - 2.65 A1 0.10 0.30 A2 2.25 2.35 A3 0.97 1.07 b 0.39 0.48 b1 0.38 0.43 c 0.25 0.31 c1 0.24 0.26 D 17.89 18.29 E 10.10 10.50 E1 7.30 7.70 e 1.27 BSC L 0.70 1.00 L1 1.40 BSC θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AG2136 MOSFET/IGBT GATE DRIVER 3-PHASE HIGH VOL TAGE DRIVER REV2.0 - NOV 2017 RELEASED, MAY 2019 UPDATED - - 13 - IMPORTANT NOTICE AiT Semic onductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, be fore placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or oth er critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimi ze risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.