AG01Y DSK | Alldatasheet
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Case: JEDEC DO-41, molded pl astic Method 208 Mounting: Any Ratings at 25 ambient temperature unless otherwise specified. Single pha se,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum peak repetitive reverse voltage V RRM 400 600 Max imum RMS v oltage V RMS 280 420 Maximum DC blocking voltage V DC 400 600 Maximum average forw ard rectified current v 9.5mm lead length, @T A =75 I F(AV) 0.5 A Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ I F F AV V F V M axim um reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J 15 pF Typical thermal resistance (Note3) R θJC Operating junction temperature range T J Storage temperature range T STG 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. UNITS 100 500 1.2 AG01Y - - - AG01A - 55 ----- + 150 HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 70--- 600 V CURRENT: 0.5---1.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO-41 Low forward voltage drop High crrent capability NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 200 1.0 0.7 1.8 V A 100 I R - 55 ----- + 150 100 70 140 200 3. Thermal resistance junction to case. Easily cleaned with f reon, alcohol, lsopropand Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams I FSM X A Terminals: Axial leads,solderable per MIL-STD-202, AG01Y AG01Z AG01 AG01A Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
AMBIENT TEMPERATURE, AVERAGE FORWARD RECTIFIED CURRENT INSTANTANEOUS FORWARD CURRENT FIG.5--TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE,pF REVERSE VOLTAGE,VOLTS GAG01Y - - - GAG01A FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- PEAK FORWARD SURGE CURRENT Z SE T TIM E BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE1) (+) 25VDC (approx) (-) t rr -1.0A -0.25A +0.5A 1cm 0 2 5 5 0 7 5 100 125 150 0.3 0.6 0.9 1.2 1.5 AG01Y AG01Z,AG01 AG01A Single Phase Half Wave 60Hz Resistive or Inductive Load 0.4 0.8 0.001 0.01 0.1 1.2 2.0 2.4 2.8 1.6 T J =25 Pulse Width=300ns AG01Y AG01Z-AG01 AG01A 1 5 10 50 AG01Y AG01Z--AG01A T J =25 8.3ms Single Half Sine-Wave 0.1 T J =25 0 . 2 0 . 412 1 0 0 41 0 4 0 20 200 100 AG01Y-AG01 AG01A Diode Semiconductor Korea www.diode.kr