AF9928N ANACHIP | Alldatasheet
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N-Channel Enhancement Mode Power MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Aug 11, 2005 Features - Low On-resistance - Capable of 2.5V Gate Drive - Optimal DC/DC battery application Product Summary BVDSS (V) rDS(on) (mΩ) ID (A) 20 23 5 Pin Assignments TSSOP-8 1 D2 General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Pin Descriptions Pin Name Description S1/2 Source G1/2 Gate D1/2 Drain Ordering information A X 9928N X X X PN PackageFeature F :MOSFET TS: TSSOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel
N-Channel Enhancement Mode Power MOSFET Anachip Corp. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V at TA=25ºC 5 ID Drain Current (Note 1), at VGS=4.5V at TA=70ºC 3.5 A IDM Pulsed Drain Current (Note 2) 25 A Total Power Dissipation 1 W PD Linear Derating Factor at TA=25ºC 0.008 W/ºC TSTG Storage Temperature Range -55 to 150 ºC TJ Operating Junction Temperature Range -55 to 150 ºC Thermal Data Symbol Parameter Value Units Rthj-a Thermal Resistance Junction-Ambient (Note 1) Max. 125 oC/W Note 1: Surface mounted on 1 in copper pad of FR4 board, 208 o C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Electrical Characteristics at TJ=25ºC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient Reference to 25oC, ID=1mA - 0.02 - V/ oC VGS=4.5V, ID=5A - - 23 m ΩRDS(on) Static Drain-Source On-Resistance (Note 3) VGS=2.5V, ID=2A - - 29 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - - V gfs Forward Transconductance V DS=10V, ID=5A - 21 - S VDS=20V, VGS=0V, TJ=25ºC - - 1 uA IDSS Drain-Source Leakage Current VDS=20V, VGS=0V, TJ=70ºC - - 25 uA IGSS Gate-Source Leakage V GS=±12V - - ±10 uA Qg Total Gate Charge (Note 3) - 15.9 - nC Qgs Gate-Source Charge - 1.5 - nC Qgd Gate-Drain (“Miller”) Charge ID=5A, VDS=10V, VGS=4.5V - 7.4 - nC td(on) Turn-On Delay Time (Note 3) - 6.2 - ns tr Rise Time - 9 - ns td(off) Turn-Off Delay Time - 30 - ns tf Fall-Time VDS=10V, ID=1A, RG=3.3Ω, VGS=4.5V RD=10Ω - 11 - ns Ciss Input Capacitance - 530 - pF Coss Output Capacitance - 245 - pF Crss Reverse Transfer Capacitance VGS=0V, VDS=20V, f=1.0MHz - 125 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current (Body Diode) VD=VG=0V, VS=1.2V - - 0.83 A VSD Forward On Voltage (Note 3) TJ=25ºC , IS=5A, VGS=0V - - 1.2 V Note3: Pulse width ≤ 300us, duty cycle ≤ 2%.
N-Channel Enhancement Mode Power MOSFET Anachip Corp. Typical Performance Characteristics
N-Channel Enhancement Mode Power MOSFET Anachip Corp. Typical Performance Characteristics (Continued)
N-Channel Enhancement Mode Power MOSFET Anachip Corp. Marking Information TSSOP-8L ( Top View ) 9 9 2 8 N AA Y W X Year code: Part Number Lot code: Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 "A~Z": 01~26; "A~Z": 27~52 "X": Non-Lead Free;"X": Lead FreeLogo Package Information Package Type: TSSOP-8L L C DETAIL A E E1A D e B θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Dimensions In Millimeters Symbol Min. Nom. Max. A - - 1.20 A1 0.05 - 0.15 B 0.19 - 0.30 C - 0.127 - D 2.90 3.00 3.10 E 6.20 6.40 6.60 E1 4.30 4.40 4.50 L 0.45 0.60 0.75 e 0.65 REF. θ 0 o -- 8 o