AFP2325A ALFA-MOS | Alldatasheet
Document overview
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Technical content
Technology Enhancement Mode MOSFET ©Alfa-MOS Technology Corp. www.alfa-mos.com Rev.B Jan. 2018 Page 1 General Description Features AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent R DS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. z -100V/-1.0A,R DS(ON)=600mΩ@VGS=-10V z -100V/-0.5A,R DS(ON)=650mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT-23 package design Pin Description ( SOT-23 ) Application z Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity AFP2325AS23RG 25 YW SOT-23 Tape & Reel 3000 EA ※ 25 p a r t s c o d e ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2325AS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free
Technology Enhancement Mode MOSFET ©Alfa-MOS Technology Corp. www.alfa-mos.com Rev.B Jan. 2018 Page 2 Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage V DSS -100 V Gate –Source Voltage V GSS ±20 V TA=25℃ -1.0 Continuous Drain Current(TJ=150℃) TA=70℃ ID -0.5 A Pulsed Drain Current I DM -4.0 A Continuous Source Current(Diode Conduction) I S -1.0 A TA=25℃ 1.25 Power Dissipation TA=70℃ PD 0.8 W Operating Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 120 ℃/W
Electrical Characteristics
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS=0V,ID=-250uA -100 Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250uA -1.0 -2.5 V Gate Leakage Current I GSS V DS=0V,VGS=±12V ±100 nA VDS=-80V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS VDS=-80V,VGS=0V TJ=85℃ -30 uA On-State Drain Current I D(on) VDS≦-15V,VGS=-10V -1.6 A VGS=-10V,ID=-1.0A 505 600 Drain-Source On-Resistance R DS(on) VGS=-4.5V,ID=-0.5A 535 650 mΩ Forward Transconductance gFS VDS=-15V,ID=-0.5A 2.8 S Diode Forward Voltage V SD I S=-0.5A,VGS=0V -0.75 -1.3 V Dynamic Total Gate Charge Q g 9 20 Gate-Source Charge Q gs 2.5 Gate-Drain Charge Q gd VDS=-75V,VGS=-10V ID≡-0.5A 3.5 nC Input Capacitance C iss 450 650 Output Capacitance C oss 50 Reverse Transfer Capacitance C rss VDS=-25V,VGS=0V f=1MHz 30 pF td(on) 10 20 Turn-On Time tr 15 30 td(off) 20 40 Turn-Off Time tf VDD=-75V,RL=75Ω ID≡-1.0A,VGEN=-10V RG=6.0Ω 15 30 ns
Technology Enhancement Mode MOSFET ©Alfa-MOS Technology Corp. www.alfa-mos.com Rev.B Jan. 2018 Page 3 Typical Characteristics
Technology Enhancement Mode MOSFET ©Alfa-MOS Technology Corp. www.alfa-mos.com Rev.B Jan. 2018 Page 4 Typical Characteristics
Technology Enhancement Mode MOSFET ©Alfa-MOS Technology Corp. www.alfa-mos.com Rev.B Jan. 2018 Page 5 Typical Characteristics
Technology Enhancement Mode MOSFET ©Alfa-MOS Technology Corp. www.alfa-mos.com Rev.B Jan. 2018 Page 6 Package Information ( SOT-23 ) ©2010 Alfa-MOS Technology Corp. Tel : 886 2) 2651 3928 Fax : 886 2) 2786 8483 ©http://www.alfa-mos.com