AFP02N8-000 ALPHA | Alldatasheet

Document overview

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Technical content

Features

■ Low Noise Figure, 1.25 dB @ 4 GHz ■ High Associated Gain, 15.0 dB @ 4 GHz ■ High MAG, > 18 dB @ 4 GHz ■ 0.7 µm Ti/Pd/Au Gates ■ Passivated Surface

Description

The AFP02N8-000 general purpose PHEMT chip has excellent gain and noise performance through X band, making it suitable for a wide range of commercial and military applications.The device employs 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. AFP02N8-000 Parameter Test Conditions Min. Typ. Max. Unit Saturated Drain Current (IDSS )V DS = 2 V, VGS = 0 V 25.0 45.0 90.0 mA Transconductance (gm) V DS = 2 V, IDS = 15 mA 40.0 55.0 mS Pinch-off Voltage (VP) V DS = 2 V, IDS = 0.3 mA -0.2 -0.6 -2.0 V Gate to Source I GS = -200 µA -4.0 -6.0 V Breakdown Voltage (Vbgs) Noise Figure (NF) VDS = 2 V, IDS = 15 mA, F = 4 GHz 1.25 1.75 dB Associated Gain (GA) 14.0 15.0 dB Noise Figure (NF) VDS = 2 V, IDS = 15 mA, F = 12 GHz 2.6 3.0 dB Associated Gain (GA) 8.5 9.4 dB Electrical Specifications at 25°C 400 125 350 D SS GG D Characteristic Value Drain to Source Voltage (VDS ) 6 V Gate to Source Voltage (VGS ) -3 V Drain Current (IDS ) I DSS Gate Current (IGS ) 10 µA Total Power Dissipation (PT) 300 mW Storage Temperature (TST ) -65 to +150°C Channel Temperature (TCH ) 175°C Absolute Maximum Ratings

2 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com Specifications subject to change without notice.6/99A General Purpose PHEMT Chip AFP02N8-000 0 2 4 6 8 10 12 14 16 18 20 N FM IN (dB) GA (dB) Frequency (G H z) R F M inim um N oise Figure (N FM IN ) and A ssociated G ain (G A ) vs. Frequency (G H z) VD S = 2 V, ID S = 15 m A G A (dB) N FM IN (dB) 100 VD S (V) lD S (m A) D C D rain C urrent (ID S) vs. D rain Voltage (VD S) as a Function of G ate to Source Voltage (VG S) 0 5 10 15 20 25 30 4035 ID S (m A) N FM IN (dB) GA (dB) R F M inim um N oise Figure (N FM IN ) and A ssociated G ain (G A ) vs. D rain C urrent (ID S) F = 12 G H z, VD S = 2 V 105 N FM IN (dB) G A (dB) 100 -2.0 -1.0 0 100 5050 1.0 gm (mS) VG S (V) lD S (m A) VD S = 2 V D C D rain C urrent (ID S) and Transconductance (gm ) vs. G ate to Source Voltage (VG S) Typical Performance Data

General Purpose PHEMT Chip AFP02N8-000 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com 3 Specifications subject to change without notice.6/99A Typical S-Parameters (VDS = 2 V, IDS = 10 mA) Freq. NF MIN ΓΓopt (GHz) (dB) Ma g. Ang. R N /50 G A (dB) Typical Noise Parameters (VDS = 2 V, IDS = 15 mA) Both noise and S-parameters include bond wires.Two gate bond wires and two drain wires are each approximately 325 µm (13 mil) long.Four source bond wires (2 each side) are each approximately 200 µm (8 mil) long.All wire is 17 µm (0.7 mil) diameter gold. Freq. S11 S21 S12 S22 S21 MA G/

4 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com Specifications subject to change without notice.6/99A General Purpose PHEMT Chip AFP02N8-000 Typical S-Parameters (VDS = 2 V, IDS = 30 mA) Freq. S11 S21 S12 S22 S21 MA G/