AFM06P3-212 ALPHA | Alldatasheet

Document overview

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Technical content

Features

■ 22 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC–18 GHz ■ 0.25 µm Ti/Pd/Au Gates ■ Passivated Surface

Description

The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.They employ Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. AFM06P3-212, AFM06P3-213 Parameter Test Conditions Min. Typ. Max. Unit Saturated Drain Current (IDSS ) 130.0 200.0 270.0 mA Transconductance (gm) VDS = 2 V, VGS = 0 V 90.0 120.0 mS Pinch-Off Voltage (VP)V DS = 5 V, IDS = 1.5 mA 1.0 3.0 5.0 V Gate to Drain Breakdown I GD = 600 µA 8.0 12.0 V Voltage (Vbgd) Output Power at 1 dB 22.0 dBm Compression (P1 dB) Gain at 1 dB Compression (G1 dB) VDS = 5 V, IDS = 70 mA, F = 18 GHz 9.0 dB Power Added Efficiency (ηadd) 23.0 % Electrical Specifications at 25°C Source Gate Source Drain Drain Source Gate Source 212 213 Characteristic Value Drain to Source Voltage (VDS ) 6 V Gate to Source Voltage (VGS ) -4 V Drain Current (IDS ) I DSS Gate Current (IGS ) 1 mA Total Power Dissipation (PT) 1.1 W Storage Temperature (TST ) -65 to +150°C Channel Temperature (TCH ) 175°C Absolute Maximum Ratings

2 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com Specifications subject to change without notice.6/99A Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 I-V 120 150 012345 -0.5 V -1.0 V -1.5 V -2.0 V -2.5 V VDS (V) lDS (mA) VGS = 0 V Power Derating 0 50 100 150 200 Total Power Dissipation PT (W) TBASE (˚C) 0.25 0.50 0.75 1.00 1.25 1.50 Typical Performance Data Typical S-Parameters (VDS = 5 V, IDS = 100 mA) Freq. S11 S21 S12 S22 MA G/

Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com 3 Specifications subject to change without notice.6/99A 212 0.005 (0.13 m m )

4 PLAC ES

0.036 (0.91 m m ) 0.070 (1.78 m m ) 0.070 (1.78 m m ) 0.020 (0.51 m m )

2 PLAC ES

45˚ 0.067 (1.70 m m ) M AX. 213 0.005 (0.13 m m ) 0.036 (0.91 m m ) 0.07 (1.78 m m ) 0.027 (0.70 m m ) 0.020 (0.51 m m ) SO U R C E 45˚ 0.067 (1.70 m m ) M ax.