AFM06P2-212 SKYWORKS | Alldatasheet
Document overview
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Technical content
Features
n 22 dBm Output Power at 18 GHz n High Associated Gain, 9 dB at 18 GHz n High Power Added Efficiency, 23% n Broadband Operation, DC–18 GHz n 0.25 mm Ti/Pd/Au n Passivated Surface AFM06P2-212, 213 Source Gate Source Drain Drain Source Gate Source 212 213 The AFM06P2-212, 213 is a high performance power GaAs MESFET chip in an industry standard ceramic micro-x package, having a gate length of 0.25 mm and a total gate periphery of 600 mm.The device has excellent gain and power performance through 26 GHz making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.The device employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged reliable part.
Description
Electrical Specifications at 25°C Parameter Symbol Test Conditions Min. Typ. Max. Unit Saturated Drain Current I DSS 130 200 270 mA Transconductance gm VDS = 2 V, VGS = 0 V 90 120 – mS Pinch–Off Voltage V P VDS = 5 V, IDS = 1.5 mA 1 3 5 V Gate to Drain Breakdown Voltage V BGD IGD = 600 mA8 1 2 – V Output Power at 1dB Compression P 1 dB – 22 – dBm Gain at 1dB Compression G 1 dB VDS = 5 V, IDS = 70 mA, F = 18 GHz – 9 – dB Power Added Efficiency hadd – 23 – % Parameter Value Drain to Source Voltage (VDS )6 V Gate to Source Voltage (VGS ) –4 V Drain Current (IDS )I DSS Gate Current (IGS )1 m A Total Power Dissipation (PT) 1.1 W Channel Temperature (TCH ) 175°C Storage Temperature (TST ) –65 to +150°C Absolute Maximum Ratings
Ka Band Power GaAs MESFET AFM06P2-212, 213 2 Alpha Industries, Inc.[781] 935-5150 • Fax [617] 824-4579• Emailsales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 2/99A 012345 150 120 V( V )DS –0.5 V –1.0 V –1.5 V –2.0 V –2.5 V I( m A )DS V= 0 VGS I – V 0 50 100 150 200 1.50 1.25 1.00 0.75 0.50 0.25 T( ° C )BASE Total Power Dissipation P(W)T Power Derating Typical Performance Data Typical S-Parameters (VDS = 5 V, IDS = 100 mA) Freq. S 11 S21 S12 S22 Mag./Msg.