AFM04P2-000 ALPHA | Alldatasheet

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Technical content

Features

I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC–40 GHz I 0.25 µm Ti/Pd/Au Gates I Passivated Surface I Through-Substrate Via Hole Grounding

Description

The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Through- substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance. AFM04P2-000 Parameter Test Conditions Min. Typ. Max. Unit Saturated Drain Current (IDSS) VDS = 2 V, VGS = 0 V 90.0 140.0 190.0 mA Transconductance (gm) 60.0 80.0 mS Pinch-off Voltage (VP) V DS = 5 V, IDS = 1 mA 1.0 3.0 5.0 -V Gate to Drain I GD = -400 µA 8.0 12.0 -V Breakdown Voltage (Vbgd) Output Power at 1 dB 21.0 dBm Compression (P1 dB) Gain at 1 dB Compression (G1 dB) VDS = 5 V, IDS = 70 mA, F = 18 GHz 9.0 dB Power Added Efficiency (ηadd) 25.0 % Output Power at 1 dB 20.0 dBm Compression (P1 dB) Gain at 1 dB Compression (G1 dB) VDS = 5 V, IDS = 70 mA, F = 30 GHz 5.0 dB Power Added Efficiency (ηadd) 15.0 % Thermal Resistance (ΘJC) T BASE = 25°C 250.0 °C/W Electrical Specifications at 25°C 0.395 mm 0.327 mm Drain Gate 0.655 mm 0.110 mm 0.110 mm Characteristic Value Drain to Source Voltage (VDS) 6 V Gate to Source Voltage (VGS) -4 V Drain Current (IDS) I DSS Gate Current (IGS) 1 mA Total Power Dissipation (PT) 700 mW Storage Temperature (TST) -65 to +150 °C Channel Temperature (TCH) 175 °C Absolute Maximum Ratings Chip thickness = 0.1 mm.

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 12/99A Ka Band Power GaAs MESFET Chip AFM04P2-000 Typical S-Parameters (VDS = 5 V, IDS = 70 mA) Freq. S11 S21 S12 S22 MAG S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals.

Parameter Description Unit Default BETA Transconductance Coefficient A/V 2 0.09464 VPO Pinch-off voltage V -1.8760 U Mobility degradation fitting parameter /V 0.3599 GAMA Slope parameter of pinch-off voltage 0.03458 Q Power law parameter 1.6560 NG Subthreshold slope gate parameter 0.6025 ND Subthreshold slope drain parameter 0.6050 DELT Slope of drain characteristics in the saturated region /A, V 0.5633 ALFA Slope of drain characteristics in the linear region /V 1.9400 T Channel transmit-time delay pS 6.4330 CGSO Gate-source Schottky barrier capacitance at VGS = 0 pF 0.4232 CGDO Gate-drain Schottky barrier capacitance at VGS = 0 pF 0.03138 VBI Built-in barrier potential V 1.200 IS Diode saturation current A 0.563e-12 N Diode ideality factor 1.1000 IBO Breakdown saturation current A 1.000e-16 NR Breakdown ideality factor 10.0 VBD Breakdown voltage V 20.00 RG Gate terminal resistance Ω 1.0000 RD Drain terminal resistance Ω 2.0000 RS Source terminal resistance Ω 0.8000 LG Gate lead inductance nH 0.5572 LD Drain lead inductance nH 0.2279 LS Source lead inductance nH 0.03532 CDS Drain-source capacitance pF 0.1555 RDSD Channel trapping resistance Ω 107.99 CDSD Low frequency trapping resistance nF 12.03 CGE Gate-source electrode capacitance fF 7.7240 CDE Drain-source electrode capacitance fF 9.4390 Ka Band Power GaAs MESFET Chip AFM04P2-000 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 3 Specifications subject to change without notice. 12/99A Power Derating 0.25 0.50 0.75 1.00 0 50 100 150 200 Total Power Dissipation PT (W) TBASE (˚C) I-V 120 150 012 3 54 -0.5 V -1.0 V -1.5 V -2.0 V -2.5 V VDS (V) lDS (mA) VGS = 0 V Typical Performance Data TOM-2 Model Parameters