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Technical content

Features

  • AEC−Q101 Qualified
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co−efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation V oltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A
  • 100% of the Parts are Tested for ILM (Note 2)
  • Fast Switching
  • Tight Parameter Distribution
  • RoHS Compliant Typical Applications
  • Automotive HEV−EV Onboard Chargers
  • Automotive HEV−EV DC−DC Converters
  • Totem Pole Bridgeless PFC
  • PTC MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V Collector Current (Note 1) @ T C = 25°C @ TC = 100°C IC 80 A Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A Diode Forward Current @ T C < 25°C (Note 1) @ T C < 100°C IF 80 A Pulsed Diode Maximum Forward Current IFM(2) 160 A Maximum Power Dissipation @ T C = 25°C @ TC = 100°C PD 238 119 W Operating Junction / Storage Temperature Range TJ, TSTG −55 to +175 Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. V CC = 400 V, VGE = 15 V, IC = 160 A, RG = 15 /C0087, Inductive Load 3. Repetitive Rating: pulse width limited by max. Junction temperature TO−247−3L CASE 340CX

ORDERING INFORMATION

www.onsemi.com MARKING DIAGRAM &Z = Assembly Plant Code &3 = 3 −Digit Date Code &K = 2 −Digit Lot Traceability Code AFGHL40T65SQD = Specific Device Code

40 A, 650 V,

VCESat = 1.6 V G C E Device Package Shipping AFGHL40T65SQD TO −247−3L 30 Units / Rail &Z&3&K AFGHL 40T65SQD C G E

www.onsemi.com THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT R/C0113JC 0.63 °C/W Thermal resistance junction−to−case, for Diode R/C0113JC 1.71 °C/W Thermal resistance junction−to−ambient R/C0113JA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA /C0068BVCES /C0068TJ − 0.6 − V/°C Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 /C0109A Gate leakage current, collector− emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA ON CHARACTERISTICS Gate−emitter threshold voltage VGE = VCE, IC = 40 mA VGE(th) 3.4 4.9 6.4 V Collector−emitter saturation voltage VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCE(sat) − 1.6 1.95 2.1 V DYNAMIC CHARACTERISTICS Input capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 2339 − pF Output capacitance Coes − 61 − Reverse transfer capacitance Cres − 8 − Gate charge total VCE = 400 V, IC = 40 A, VGE = 15 V Qg − 68 − nC Gate−to−emitter charge Qge − 13 − Gate−to−collector charge Qgc − 16 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time TC = 25°C, VCC = 400 V, IC = 20 A, RG = 6 /C0087, VGE = 15 V, Inductive Load td(on) − 15 − ns Rise time tr − 10 − Turn−off delay time td(off) − 70 − Fall time tf − 3 − Turn−on switching loss Eon − 0.25 − mJ Turn−off switching loss Eoff − 0.09 − Total switching loss Ets − 0.34 − Turn−on delay time TC = 25°C, VCC = 400 V, IC = 40 A, RG = 6 /C0087, VGE = 15 V, Inductive Load td(on) − 17 − ns Rise time tr − 22 − Turn−off delay time td(off) − 67 − Fall time tf − 31 − Turn−on switching loss Eon − 0.75 − mJ Turn−off switching loss Eoff − 0.29 − Total switching loss Ets − 1.04 −

www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Continued) Parameter UnitMaxTypMinSymbolTest Conditions SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time TC = 175°C, VCC = 400 V, IC = 20 A, RG = 6 /C0087, VGE = 15 V, Inductive Load td(on) − 14 − ns Rise time tr − 12 − Turn−off delay time td(off) − 81 − Fall time tf − 7 − Turn−on switching loss Eon − 0.46 − mJ Turn−off switching loss Eoff − 0.22 − Total switching loss Ets − 0.68 − Turn−on delay time TC = 175°C, VCC = 400 V, IC = 40 A, RG = 6 /C0087, VGE = 15 V, Inductive Load td(on) − 16 − ns Rise time tr − 25 − Turn−off delay time td(off) − 75 − Fall time tf − 38 − Turn−on switching loss Eon − 1.06 − mJ Turn−off switching loss Eoff − 0.47 − Total switching loss Ets − 1.53 − DIODE CHARACTERISTICS Diode Forward Voltage IF = 20 A, TC = 25°C VFM − 2.0 2.6 V IF = 20 A, TC = 175°C − 1.75 − Reverse Recovery Energy IF = 20 A, dlF/dt = 200 A//C0109s, TC = 175°C Erec − 54 − /C0109J Diode Reverse Recovery Time IF = 20 A, dlF/dt = 200 A//C0109s, TC = 25°C Trr − 28 − ns IF = 20 A, dlF/dt = 200 A//C0109s, TC = 175°C Trr − 209 − Diode Reverse Recovery Charge IF = 20 A, dlF/dt = 200 A//C0109s, TC = 25°C Qrr − 38 − nC IF = 20 A, dlF/dt = 200 A//C0109s, TC = 175°C Qrr − 605 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

www.onsemi.com PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE O

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