AFGHL25T120RW ONSEMI | Alldatasheet
Document overview
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Technical content
Features
Extremely Efficient Trench with Field Stop Technology Maximum Junction Temperature − TJ = 175C Short Circuit Rated and Low Saturation V oltage Fast Switching and Tightened Parameter Distribution AEC−Q101 Qualified, PPAP Available Upon Request This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
Applications
Automotive E−compressor Automotive EV PTC Heater OBC MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Collector−to−Emitter Voltage VCE 1200 V Gate−to−Emitter Voltage VGE 20 Transient Gate−to−Emitter Voltage 30 Collector Current TC = 25C IC 50 A TC = 100C 25 Power Dissipation TC = 25C PD 468 W TC = 100C 234 Pulsed Collector Current TC = 25C, tp = 10 /C0109s (Note 1) ICM 75 A Short Circuit Withstand Time VGE = 15 V, VCC = 800 V, TC = 150C TSC 6 /C0109s Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 Lead Temperature for Soldering Purposes TL 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature TO−247−3LD CASE 340CX
ORDERING INFORMATION
TO−247−3L 30 Units / Tube C G E AFGHL25T120RW (Pb−Free) AFGH25120RW = Specific Device Code &Z = Assembly Plant Code &3 = 3 −Digit Date Code &K = 2 −Digit Lot Traceability Code $Y = onsemi Logo AFGH25 120RW &Z&3&K$Y BVCES VCE(sat) TYP I C MAX 1200 V 1.38 V 25 A G C E
www.onsemi.com THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction−to−Case IGBT R/C0113JC 0.32 C/W Thermal Resistance, Junction−to−Ambient R/C0113JA 40 C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector−to−Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA 1200 − − V Zero Gate Voltage Collector Current ICES VGE = 0 V, VCE = VCES − − 40 /C0109A Gate−to−Emitter Leakage Current IGES VGE = 20 V, VCE = 0 V − − 400 nA ON CHARACTERISTICS Gate Threshold Voltage VGE(th) VGE = VCE, IC = 25 mA, TJ = 25C 5.03 5.93 6.83 V Gate−to−Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 25 A, TJ = 25C − 1.38 1.71 V VGE = 15 V, IC = 25 A, TJ = 175C − 1.64 − DYNAMIC CHARACTERISTICS Input Capacitance CIES VCE = 30 V, VGE = 0 V, f = 1 MHz − 3057 − pF Output Capacitance COES − 94.2 − Reverse Transfer Capacitance CRES − 16.2 − Total Gate Charge QG VCE = 600 V, VGE = 15 V, IC = 25 A − 113 − nC Gate−to−Emitter Charge QGE − 27.2 − Gate−to−Collector Charge QGC − 50 − SWITCHING CHARACTERISTIC, INDUCTIVE LOAD (Note: Si Diode Applied) Turn−On Delay Time td(on) VCE = 600 V, VGE = 0/15 V, IC = 12.5 A, RG = 4.7 /C0087, TJ = 25C − 33.8 − ns Turn−Off Delay Time td(off) − 223 − Rise Time tr − 19.7 − Fall Time tf − 192 − Turn−On Switching Loss Eon − 0.55 − mJ Turn−Off Switching Loss Eoff − 0.86 − Total Switching Loss Ets − 1.41 − Turn−On Delay Time td(on) VCE = 600 V, VGE = 0/15 V, IC = 25 A, RG = 4.7 /C0087, TJ = 25C − 36.9 − ns Turn−Off Delay Time td(off) − 175 − Rise time tr − 35.4 − Fall Time tf − 126 − Turn−On Switching Loss Eon − 1.57 − mJ Turn−Off Switching Loss Eoff − 1.06 − Total Switching Loss Ets − 2.62 −
www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter UnitMaxTypMinTest ConditionsSymbol SWITCHING CHARACTERISTIC, INDUCTIVE LOAD (Note: Si Diode Applied) Turn−On Delay Time td(on) VCE = 600 V, VGE = 0/15 V, IC = 12.5 A, RG = 4.7 /C0087, TJ = 175C − 37.7 − ns Turn−Off Delay Time td(off) − 315 − Rise Time tr − 27.1 − Fall Time tf − 384 − Turn−On Switching Loss Eon − 0.78 − mJ Turn−Off Switching Loss Eoff − 1.6 − Total Switching Loss Ets − 2.38 − Turn−On Delay Time td(on) VCE = 600 V, VGE = 0/15 V, IC = 25 A, RG = 4.7 /C0087, TJ = 175C − 42.2 − ns Turn−Off Delay Time td(off) − 235 − Rise time tr − 46.5 − Fall Time tf − 242 − Turn−On Switching Loss Eon − 2.23 − mJ Turn−Off Switching Loss Eoff − 1.9 − Total Switching Loss Ets − 4.14 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb −Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ /C0071”, may or may not be present. Some products may not follow the Generic Marking. XXXXXXXXX AYWWG MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON93302GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−247−3LD © Semiconductor Components Industries, LLC, 2018 www.onsemi.com
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