AF9902M

AF9902M ANACHIP | Alldatasheet

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2N and 2P-Channel Enhancement Mode Power MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 22, 2005 „ Features - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product „ Product Summary CH BVDSS (V) RDS(ON) (mΩ) ID (A) N 30 40 4.3 P -30 70 -3.3 „ Pin Assignments SO-8

1 P1G

„ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. „ Pin Descriptions Pin Name Description N1G Gate (NMOS1) N1D/P1D Drain(NMOS1) / Drain(PMOS1) N1S/N2S Source(NMOS1) / Source(NMOS2) N2G Gate (NMOS2) P2G Gate (PMOS2) N2D/P2D Drain(NMOS2) / Drain(PMOS2) P1S/P2S Source(PMOS1) / Source(PMOS2) P1G Gate (PMOS1) „ Ordering information A X 9902M X X PN PackageFeature F :MOSFET S: SO-8 Packing Blank : Tube or Bulk A : Tape & Reel „ Block Diagram P1S P2S N1S N2S N2GN1G P1G P2G P1N1D P2N2D

2N and 2P-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Absolute Maximum Ratings Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage ±12 ±12 V TA=25ºC 4.3 -3.3 ID Continuous Drain Current (Note 1) TA=70ºC 3.4 -2.6 A IDM Pulsed Drain Current (Note 2) 20 -20 A Total Power Dissipation T A=25ºC 1.38 W PD Linear Derating Factor 0.01 W/ºC TSTG Storage Temperature Range -55 to 150 ºC TJ Operating Junction Temperature Range -55 to 150 ºC „ Thermal Data Symbol Parameter Value Units RθJA Thermal Resistance Junction-Ambient (Note 1) Max. 90 ºC/W „ Electrical Characteristics (TJ=25ºC unless otherwise specified) Limits Symbol Parameter Test Conditions CH Min. Typ. Max. Unit VGS=0V, ID=250uA N 30 - - BVDSS Drain-Source breakdown Voltage VGS=0V, ID=-250uA P -30 - - V Reference to 25 ºC, ID=1mA N - 0.03 - ∆BVDSS/∆ TJ Breakdown Voltage Temperature Coefficient Reference to 25 ºC, ID=-1mA P - -0.02 - V/ºC VGS=10V, ID=5A - - 40 VGS=4.5V, ID=4A - - 50 VGS=2.5V, ID=2A N - - 60 VGS=-10V, ID=-4A - - 70 VGS=-4.5V, ID=-3A - - 90 RDS(ON) Static Drain-Source On-Resistance (Note 3) VGS=-2.5V, ID=-2A P - - 120 mΩ VDS= VGS, ID=250uA N 0.5 - - VGS(th) Gate-Threshold Voltage VDS= VGS, ID=-250uA P -0.5 - - V VDS=5V, ID=4A N - 13 - gfs Forward Transconductance VDS=-5V, ID=-3A P - 8 - S TJ=25ºC V DS=30V, VGS=0V - - 1 TJ=70ºC V DS=24V, VGS=0V N - - 25 TJ=25ºC V DS=-30V, VGS=0V - - -1 IDSS Drain-Source Leakage Current TJ=70ºC V DS=-24V, VGS=0V P - - -25 uA N - - ±100IGSS Gate-Source Leakage VGS=±12V P - - ±100 nA N - 9 15 Qg Total Gate Charge (Note 3) P - 10 16 N - 1.6 - Qgs Gate-Source Charge P - 2 - N - 4 - Qgd Gate-Drain (“Miller”) Charge N-Channel VDS=24V, VGS=4.5V ID=4A P-Channel V DS=-24V, VGS=-4.5V ID=-3A P - 3 - nC

2N and 2P-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Electrical Characteristics (TJ=25ºC unless otherwise specified) Limits Symbol Parameter Test Conditions CH Min. Typ. Max. Unit N - 8 - td(on) Turn-On Delay Time (Note 3) P - 8 - N - 9 - tr Rise Time P - 9 - N - 17 - td(off) Turn-Off Delay Time P - 25 - N - 5 - tf Fall-Time N-Channel VDS=15V, VGS=5V ID=1A, RG=3.3Ω, RD=15Ω P-Channel VDS=-15V, VGS=-5V ID=-1A, RG=3.3Ω, RD=15Ω P - 14 - ns N - 630 1000Ciss Input Capacitance P - 690 1100 N - 140 - Coss Output Capacitance P - 170 - N - 65 - Crss Reverse Transfer Capacitance N-Channel VGS=0V, VDS=25V f=1.0MHz P-Channel VGS=0V, VDS=-25V f=1.0MHz P - 75 - pF „ Source-Drain Diode Limits Symbol Parameter Test Conditions CH Min. Typ. Max. Unit IS=1.2A, VGS=0V N - - 1.2 VSD Forward On Voltage (Note 3) IS=-1.2A, VGS=0V P - - -1.2 V N - 17 - trr Reverse Recovery Time P - 25 - ns N - 9 - Qrr Reverse Recovery Charge N-Channel IS=4A, VGS=0V dl/dt=100A/µs P-Channel IS=-3A, VGS=0V dl/dt=-100A/µs P - 20 - nC Note 1: Surface Mounted on 1 in copper pad of FR4 board; t ≤10sec; 186ºC/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature Note 3: Pulse width < 300us, duty cycle < 2%.

2N and 2P-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics (N-Channel)

2N and 2P-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics (N-Channel) (Continued)

2N and 2P-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics (P-Channel)

2N and 2P-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics (P-Channel) (Continued)

2N and 2P-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Marking Information SO-8L ( Top View ) 9 9 0 2 M AA Y W X Year code: Part Number Lot code: Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 "A~Z": 01~26; "A~Z": 27~52 Logo „ Package Information Package Type: SO-8L L C DETAIL A E E1A D 8 765 234 e B θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Dimensions In Millimeters Symbol Min. Nom. Max. A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 L 0.38 0.71 1.27 θ 0 o 4 o 8 o e 1.27 TYP.