AF9412N ANACHIP | Alldatasheet
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Technical content
N-Channel 30-V (D-S) MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Oct 15, 2004 Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter
applications
Product Summary VDS (V) rDS(on) (mΩ) ID (A) 22@VGS=10V 9.0 30 36@VGS=4.5V 7.0 Pin Assignments SOP-8 1 D D D D S S S G General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for using in the power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery chargers, telecommunication power systems, and telephone power systems. Pin Descriptions Pin Name Description S Source G Gate D Drain Ordering information A X 9412N X X X PN PackageFeature F :MOSFET S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel
N-Channel 30-V (D-S) MOSFET Anachip Corp. Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TA=25ºC 9.4 ID Continuous Drain Current (Note 1) TA=70ºC 7.4 A IDM Pulsed Drain Current (Note 2) 30 A IS Continuous Source Current (Diode Conduction) (Note 1) 1.6 A TA=25ºC 3.1 PD Power Dissipation (Note 1) TA=70ºC 2.2 W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ºC Thermal Resistance Ratings Symbol Parameter Maximum Units RθJC Maximum Junction-to-Case (Note 1) t ≤ 5 sec 25 RθJA Maximum Junction-to-Ambient (Note 1) t ≤ 5 sec 40 ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Limits Symbol Parameter Test Conditions Min. Typ. Max. Unit Static V(BR)DSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V VGS(th) Gate-Threshold Voltage V DS=VGS, ID=250uA 1 1.95 3.0 V IGSS Gate-Body Leakage V DS=0V, VGS=20V - - ±100 nA VDS=24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V, TJ=55ºC - - 25 uA ID(on) On-State Drain Current (Note 3) V DS=5V, VGS=10V 20 - - A VGS=10V, ID=9.2A - 17 22 VGS=4.5V, ID=8A - 29 36 rDS(on) Drain-Source On-Resistance (Note 3) VGS=10V, ID=9.2A, TJ=55ºC - 20 27 mΩ gfs Forward Transconductance (Note 3) VDS=15V, ID=9.2A - 40 - S VSD Diode Forward Voltage I S=2.3A, VGS=0V - 0.7 1.1 V Dynamic (Note 4) Qg Total Gate Charge - 4.7 8 Qgs Gate-Source Charge - 1.7 - Qgd Gate-Drain Charge VDS=15V, VGS=4.5V, ID=7A - 1.4 - nC Switching td(on) Turn-On Delay Time - 16 21 tr Rise Time - 5 10 td(off) Turn-Off Delay Time - 23 37 tf Fall-Time VDD=25V, RL=25Ω, ID=1A, VGEN=10V - 3 6 nS trr Source-Drain Reverse Recovery Time IF=2.3A, Di/Dt=100A/uS - 41 80 nS Note 3: Pulse test: PW ≤ 300us duty cycle ≤ 2%. Note 4: Guaranteed by design, not subject to production testing.
N-Channel 30-V (D-S) MOSFET Anachip Corp. Typical Performance Characteristics
N-Channel 30-V (D-S) MOSFET Anachip Corp. Typical Performance Characteristics (Continued)
N-Channel 30-V (D-S) MOSFET Anachip Corp. Marking Information SOP-8L ( Top View ) 9 4 1 2 N AA Y W X Year code: Part Number Lot code: Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 "A~Z": 01~26; "A~Z": 27~52 "X": Non-Lead Free;"X": Lead FreeLogo Package Information Package Type: SOP-8L VIEW "A" L C VIEW "A" H E A A2A1Be D 7 (4X) 0.015x45 7 (4X) y A1 0.10 - 0.25 0.040 - 0.100 θ 0O - 8 O 0 O - 8 O