AF8958C ANACHIP | Alldatasheet
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Technical content
P & N-Channel 30-V (D-S) MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Jul 16, 2004 Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter
applications
Product Summary VDS (V) rDS(on) (mΩ) ID (A) 40@VGS=4.5V 6.0 30 28@VGS=10V 7.0 Pin Assignments SOP-8 1 D1 General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Pin Descriptions Pin Name Description S1 Source (NMOS) G1 Gate (NMOS) D1 Drain (NMOS) S2 Source (PMOS) G2 Gate (PMOS) D2 Drain (PMOS) Ordering information AX 8958C X X X PN PackageFeature F :MOSFET S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel
P & N-Channel 30-V (D-S) MOSFET Anachip Corp. Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage 20 -20 V TA=25ºC 7 -5.2 ID Continuous Drain Current (Note 1) TA=70ºC 5.6 -6.8 A IDM Pulsed Drain Current (Note 2) 20 -20 A IS Continuous Source Current (Diode Conduction) (Note 1) 1.3 -1.3 A TA=25ºC 2.1 2.1 PD Power Dissipation (Note 1) TA=70ºC 1.3 1.3 W TJ, TSTG Operating Junction and Storage Temperature Range - -55 to 150 ºC Thermal Resistance Ratings Symbol Parameter Maximum Units RθJC Maximum Junction-to-Case (Note 1) t < 5 sec 40 ºC/W RθJA Maximum Junction-to-Ambient (Note 1) t < 5 sec 60 ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Limits Symbol Parameter Test Conditions Ch Min. Typ. Max. Unit Static VGS=0V, ID=250uA N 30 - - V(BR)DSS Drain-Source breakdown Voltage VGS=0V, ID=-250uA P -30 - - V VDS= VGS, ID=250uA N 1 1.95 3 VGS(th) Gate-Threshold Voltage VDS= VGS, ID=-250uA P -1.0 -1.7 -3 V VGS=20V, VDS=0V N - - ±100IGSS Gate-Body Leakage VGS=-20V, VDS=0V P - - ±100 nA VDS=24V, VGS=0V N - - 1 IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V P - - -1 uA VDS=5V, VGS=10V N 20 - - ID(on) On-State Drain Current (Note 3) VDS=-5V, VGS=-10V P -20 - - A VGS=10V, ID=7A - 19 28 VGS=4.5V, ID=6A N - 24 40 VGS=-10V, ID=-5A - 42 52 rDS(on) Drain-Source On-Resistance (Note 3) VGS=-4.5V, ID=-4A P - 65 80 mΩ VDS=15V, ID=7A N - 25 - gfs Forward Tranconductance (Note 3) VDS=-15V, ID=-5A P - 10 - S
P & N-Channel 30-V (D-S) MOSFET Anachip Corp. Specifications (TA=25ºC unless otherwise noted) Limits Symbol Parameter Test Conditions Ch Min. Typ. Max. Unit Dynamic N - 10.7 26 Qg Total Gate Charge P - 10 13 N - 1.7 - Qgs Gate-Source Charge P - 2.2 - N - 2.1 - Qgd Gate-Drain Charge N-Channel VDS=15V, VGS=10V ID=7A P-Channel VDS=-15V, VGS=-10V ID=-5A P - 1.7 - nC Switching N - 8 16 td(on) Turn-On Delay Time P - 7 14 N - 5 10 tr Rise Time P - 13 24 N - 23 37 td(off) Turn-Off Delay Time P - 14 25 N - 3 6 tf Fall-Time N-Channel VDD=15, VGS=10V ID=1A, RGEN=6Ω P-Channel V DD=-15, VGS=-10V ID=-1A, RGEN=6Ω P 9 17 nS Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing.
P & N-Channel 30-V (D-S) MOSFET Anachip Corp. Marking Information SOP-8L ( Top View ) 8 9 5 8 C AA Y W X Year code: Part Number Lot code: Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 "A~Z": 01~26; "A~Z": 27~52 "X": Non-Lead Free; "X": Lead FreeLogo Package Information Package Type: SOP-8L VIEW "A" L C VIEW "A" H E A A2A1Be D 7 (4X) 0.015x45 7 (4X) y A1 0.10 - 0.25 0.040 - 0.100 θ 0O - 8 O 0 O - 8 O