AF8510C

AF8510C ANACHIP | Alldatasheet

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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Nov 14, 2005 „ Features - Lower On-Resistance - Simple Drive Requirement - Fast Switching Performance - Pb Free Plating Product „ Product Summary CH BVDSS (V) RDS(ON) (mΩ) ID (A) N 30 28 6.9 P -30 55 -5.3 „ Pin Assignments SO-8 1 D1 „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicat ions such as DC/DC converters. „ Pin Descriptions Pin Name Description S1 Source (NMOS) G1 Gate (NMOS) D1 Drain (NMOS) S2 Source (PMOS) G2 Gate (PMOS) D2 Drain (PMOS) „ Ordering information A X 8510C X X PN PackageFeature F :MOSFET S: SOP-8 Packing Blank : Tube or Bulk A : Tape & Reel

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Anachip Corp. „ Absolute Maximum Ratings Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage ±20 ±20 V TA=25ºC 6.9 -5.3 ID Continuous Drain Current (Note 1) TA=70ºC 5.5 -4.2 V IDM Pulsed Drain Current (Note 2) 30 -30 A PD Total Power Dissipation T A=25ºC 2.0 W Linear Deratomg Factor 0.016 W/ ºC TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ºC „ Thermal Data Symbol Parameter Maximum Units Rthj-amb Thermal Resistance Junction-ambient ( N o t e 1 ) Max. 62.5 ºC/W „ N-CH Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V BV DSS / TJ Breakdown Voltage Temperature Coefficient Reference to 25oC, ID=1mA - 0.02 - V/ oC VGS=10V, ID=5A - - 28 RDS(ON) Static Drain-Source On-Resistance (Note 3) VGS=4.5V, ID=3A - - 40 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=5A - 4.6 - S Drain-Source Leakage Current (TJ=25oC) VDS=30V, VGS=0V - - 1 IDSS Drain-Source Leakage Current (TJ=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge (Note 3) - 10 16 Qgs Gate-Source Charge - 2 - Qgd Gate-Drain (“Miller”) Charge ID=6.9A, VDS=24V, VGS=4.5V - 6 - nC td(on) Turn-On Delay Time (Note 3) - 8 - tr Rise Time - 7 - td(off) Turn-Off Delay Time - 20 - tf Fall-Time VDS=15V, ID=1A, RG=3.3Ω, VGS=10V RD=15Ω - 6 - ns Ciss Input Capacitance - 540 870 Coss Output Capacitance - 160 - Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1.0MHz - 120 - pF „ Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage (Note 3) I S=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time - 20 - ns Qrr Reverse Recovery Charge IS=6.9A, VGS=0V dl/dt=100A/µs - 11 - nC

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Anachip Corp. „ P-CH Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA -30 - - V BV DSS / T J Breakdown Voltage Temperature Coefficient Reference to 25oC, ID=1mA - -0.023 - V/ oC VGS=-10V, ID=-5A - - 55 VGS=-4.5V, ID=-3A - - 90 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA 1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-5A - 4.9 - S Drain-Source Leakage Current (TJ=25oC) VDS=-30V, VGS=0V - - -1 IDSS Drain-Source Leakage Current (TJ=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge (Note 3) - 9 15 Qgs Gate-Source Charge - 2 - Qgd Gate-Drain (“Miller”) Charge ID=-5.3A, VDS=-24V, VGS=-4.5V - 6 - nC td(on) Turn-On Delay Time (Note 3) - 10 - tr Rise Time - 8 - td(off) Turn-Off Delay Time - 25 - tf Fall-Time VDS=-15V, ID=1A, RG=3.3Ω, VGS=-10V RD=15Ω - 13 - ns Ciss Input Capacitance - 580 930 Coss Output Capacitance - 180 - Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1.0MHz - 120 - pF „ Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage (Note 3) I S=1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time ) - 21 - ns Qrr Reverse Recovery Charge IS=-5.3A, VGS=0V, dl/dt=100A/µs - 17 - nC Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 o C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Anachip Corp. „ Typical Performance Characteristics (N-Channel) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Anachip Corp. „ Typical Performance Characteristics (N-Channel) (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operation Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Anachip Corp. „ Typical Performance Characteristics (P-Channel) (Continued) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Anachip Corp. „ Typical Performance Characteristics (P-Channel) (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operation Area Fig 10 . Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Anachip Corp. „ Marking Information SO-8L ( Top View ) 8 5 1 0 C AA Y W Year code: Part Number Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 Logo „ Package Information Package Type: SO-8L VIEW "A" L C VIEW "A" H E A A2A1Be D 7 (4X 0.015x45 7 (4X y A1 0.10 - 0.25 0.040 - 0.100 0O - 8 O 0 O - 8 O