AF70N02

AF70N02 ANACHIP | Alldatasheet

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N-Channel Enhancement Mode Power MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 10, 2005 „ Features -Low Gate Charge -Simple Drive Requirement -Fast Switching -Pb Free Plating Product „ Product Summary BVDSS (V) RDS(ON) (mΩ) ID (A) 25 9 66 „ Pin Assignments S D G (Front View) „ General Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. „ Pin Descriptions Pin Name Description S Source G Gate D Drain „ Ordering information A X 70N02 X X PN PackageFeature F :MOSFET D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel „ Block Diagram S G D

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V TC=25ºC 66 ID Continuous Drain Current, V GS=10V TC=100ºC 42 A IDM Pulsed Drain Current (Note 1) 210 A Total Power Dissipation T C=25ºC 66 W PD Linear Derating Factor 0.53 W/ºC TSTG Storage Temperature Range -55 to 150 ºC TJ Operating Junction Temperature Range -55 to 150 ºC „ Thermal Data Symbol Parameter Maximum Units RθJC Thermal Resistance Junction-Case Max. 1.9 ºC/W RθJA Thermal Resistance Junction- Ambient Max. 110 ºC/W „ Electrical Characteristics (TJ=25ºC unless otherwise noted) Limits Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ∆BVDSS/∆TJ Breakdown Voltage Temperature Coefficient Reference to 25ºC, ID=1mA - 0.037 - V/ºC VGS=10V, ID=33A - - 9 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A - - 18 mΩ VGS(th) Gate Threshold Voltage V DS= VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=33A - 28 - S Drain-Source Leakage Current(TJ=25ºC) VDS=25V, VGS=0V - - 1 IDSS Drain-Source Leakage Current(TJ=150ºC) VDS=20V, VGS=0V - - 25 uA IGSS Gate Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge (Note 2) - 23 - Qgs Gate-Source Charge - 3 - Qgd Gate-Drain (“Miller”) Charge ID=33A VDS=20V VGS=5V - 17 - nC td(on) Turn-On Delay Time (Note 2) - 8.8 - tr Rise Time - 95 - td(off) Turn-Off Delay Time - 24 - tf Fall-Time VDS=15V ID=33A RG=3.3Ω, VGS=10V RD=0.45Ω - 14 - nS Ciss Input Capacitance - 790 - Coss Output Capacitance - 475 - Crss Reverse Transfer Capacitance VGS=0V VDS=25V, f=1.0MHz - 195 - pF „ Source-Drain Diode Sym. Parameter Test Conditions Min. Typ. Max. Unit IS Continuous Source Current (Body Diode) V D=VG=0V, VS=1.26V - - 66 A ISM Pulsed Source Current (Body Diode) (Note 1) - - 210 A VSD Forward On Voltage (Note 2) TJ=25ºC, IS=66A, VGS=0V - - 1.26 V

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Drain-Source Avalanche Ratings Sym. Parameter Test Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy (Note 2) - - 61 mJ IAR Avalanche Current VDD=25V, ID=35A, L=100uH, VGS=10V - - 35 A Note 1: Pulse width limited by safe operating area. Note 2: Pulse width < 300us, duty cycle < 2%. „ Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v . s . J u n c t i o n T e m p e r a t u r e

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics (Continued) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation C a s e T e m p e r a t u r e Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics (Continued) Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. R e v e r s e D i o d e J u n c t i o n T e m p e r a t u r e Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Marking Information TO-252 Logo Part Number YY : Year WW: Nth week X : Internal code ( Optional) ( Top View) 70N02 YYWWX „ Package Information Package Type: TO-252 D E2E1F (0.1mm) C e e R: 0.127~0.381 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Dimensions In Millimeters Symbol Min. Nom. Max. A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.70 E3 3.50 4.00 4.50 e - 2.30 - C 0.35 0.50 0.65