AF6930N

AF6930N ANACHIP | Alldatasheet

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N-Channel Enhancement Mode Power MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.2 Sep 5, 2005 „ Features - DC-DC Application - Surface Mount Package - Dual N-channel Device „ Product Summary BVDSS (V) RDS(ON) (mΩ) ID (A) 30 50 5 „ Pin Assignments SO-8 1 D1 „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. „ Pin Descriptions Pin Name Description S1/2 Source G1/2 Gate D1/2 Drain „ Ordering information A X 6930N X X X PN PackageFeature F :MOSFET S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TA=25ºC 5 ID Continuous Drain Current (Note 1) TA=70ºC 4 A IDM Pulsed Drain Current (Note 2) 20 A Total Power Dissipation 2 W PD Linear Derating Factor TA=25ºC 0.016 W/ºC TSTG Storage Temperature Range -55 to 150 ºC TJ Operating Junction Temperature Range -55 to 150 ºC „ Thermal Data Symbol Parameter Maximum Units Rthj-amb Thermal Resistance Junction-ambient ( N o t e 1 ) Max. 62.5 ºC/W „ Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient Reference to 25oC, ID=1mA - 0.037 - V/ oC VGS=10V, ID=5A - - 50 RDS(ON) Static Drain-Source On-Resistance (Note 3) VGS=4.5V, ID=3.9A - - 80 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=15V, ID=5A - 6 - S Drain-Source Leakage Current (TJ=25oC) VDS=30V, VGS=0V - - 1 IDSS Drain-Source Leakage Current (TJ=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge (Note 3) - 6.1 - Qgs Gate-Source Charge - 1.4 - Qgd Gate-Drain (“Miller”) Charge ID=5A, VDS=15V, VGS=5V - 3.3 - nC td(on) Turn-On Delay Time (Note 3) - 6.7 - tr Rise Time - 6.4 - td(off) Turn-Off Delay Time - 22.1 - tf Fall-Time VDS=15V, ID=1.5A, RG=3.3Ω, VGS=10V RD=10Ω - 2.1 - ns Ciss Input Capacitance - 240 - Coss Output Capacitance - 145 - Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1.0MHz - 55 - pF „ Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit IS Continuous Source Current (Body Diode) VD=VG=0V, VS=1.2V - - 1.67 V VSD Forward On Voltage (Note 3) TJ=25ºC, IS=1.7A, VGS=0V - - 1.2 V Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 o C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Typical Performance Characteristics (Continued)

N-Channel Enhancement Mode Power MOSFET Anachip Corp. „ Marking Information SO-8 ( Top View ) 6 9 3 0 N AA Y W X Year code: Part Number Lot code: Week code: Factory code "A~Z": 01~26; "A~Z": 27~52 "4" =2004 "A~Z": 01~26; "A~Z": 27~52 "X": Non-Lead Free;"X": Lead FreeLogo „ Package Information Package Type: SO-8 L C DETAIL A E E1A D 8 765 234 e B θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Dimensions In Millimeters Symbol Min. Nom. Max. A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 L 0.38 0.71 1.27 θ 0 o 4 o 8 o e 1.27 TYP.